Thermodynamic analysis system for vapor phase epitaxy by using internet

III族氮化物及其合金是应用于短波长发光器件的有前途的材料。特别是，InGaN基异质结构的制造已经被大量研究人员广泛研究用于紫/蓝激光二极管（LD）。金属有机物气相外延（MOVPE）通常用于这些结构的外延生长，在本项目中，我们研究了III族氮化物GaN、InN、AlN、InGaN、AlGaN和AlInN的气相外延生长的热力学分析系统，因为外延生长系统的热力学分析提供了有用的生长条件信息。我们建立的新的热力学分析系统通过互联网向任何想要找到最佳条件的研究人员提供有利的生长条件。网站是http：//epi.chem。tuat.ac.jp/

Group III nitrides and their alloys are promising materials for applications to short-wavelength light emitting devices. In particular, fabrication of InGaN-based heterostructures has been extensively studied for violet/blue laser diodes (LDs) by a large number of researchers. Matalorganic vapor-phase epitax (MOVPE) is used generally for the epitaxial growth of these structures.In this project, we have investigated thermodynamic analysis system for vapor phase epitaxy of the group III nitrides, GaN, InN, AlN, InGaN, AlGaN and AlInN, because the thermodynamic analysis of epitaxial growth system provides usefull information on the growth conditions. The new thermodynamic analysis system which we set up informs favorable conditions for the growth through the internet web to any researchers who want to find out the best conditions.The web site is http : //epi.chem..tuat.ac.jp/