Thermodynamic analysis system for vapor phase epitaxy by using internet

基于互联网的气相外延热力学分析系统

• 批准号: 10555003
• 负责人: KOUKITU Akinori
• 金额: $ 9.73万
• 依托单位: Tokyo University of Agriculture & Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10555003/
• 关键词: Nitrides; Thermodynamic analysis; Vapor-solid relation; Internet; Web; Vapor phase epitaxy; MOVPE; HVPE; 化合物半導体; 固相組成; ネットワーク; III族窒化物; 計算機能を有するデータベース; MBE; VPE

Group III nitrides and their alloys are promising materials for applications to short-wavelength light emitting devices. In particular, fabrication of InGaN-based heterostructures has been extensively studied for violet/blue laser diodes (LDs) by a large number of researchers. Matalorganic vapor-phase epitax (MOVPE) is used generally for the epitaxial growth of these structures.In this project, we have investigated thermodynamic analysis system for vapor phase epitaxy of the group III nitrides, GaN, InN, AlN, InGaN, AlGaN and AlInN, because the thermodynamic analysis of epitaxial growth system provides usefull information on the growth conditions. The new thermodynamic analysis system which we set up informs favorable conditions for the growth through the internet web to any researchers who want to find out the best conditions.The web site is http : //epi.chem..tuat.ac.jp/

III族氮化物及其合金是短波长发光器件中很有前途的材料。特别是基于ingan异质结构的紫/蓝激光二极管（ld）的制造已经被大量研究者广泛研究。金属有机气相外延（MOVPE）通常用于这些结构的外延生长。在本项目中，我们研究了III族氮化物，GaN, InN, AlN, InGaN， AlGaN和AlInN的气相外延的热力学分析系统，因为外延生长系统的热力学分析提供了有用的生长条件信息。我们建立的新的热力学分析系统通过互联网向任何想要找到最佳条件的研究人员通报有利的生长条件。网址：http://epi.chem .tuat.ac.jp/

项目成果

Y.KUMAGAI: "Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111) A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy"Int. Workshop on Nitride Semiconductors, IPAP Conf. Series. 1. 42-45 (2000)

Y.KUMAGAI：“通过金属有机氯化氢气相外延生长温度对 GaAs(111)A 上六方 GaN 层晶体质量的影响”Int。

A.Koukitu: "Thermodynamic Study of Hydride VPE of GaN" Extend Abstructs of the 17th Electronic Materials Symposium. 65-68 (1998)

A.Koukitu：“GaN 的氢化物 VPE 的热力学研究”扩展第 17 届电子材料研讨会摘要。

A Koukitu: "Thermodynamic study of the role of hydrogen during the MOVPE growth of group III nitridos" J.Crystal Growth. 197. 99-105 (1999)

A Koukitu：“III 族氮化物 MOVPE 生长过程中氢作用的热力学研究”J.Crystal Growth。

M.MAYUMI: "Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition"Int.Workshop on Nitride Semiconductors, IPAP Conf.Series. 1. 38-41 (2001)

M.MAYUMI：“GaN 分解的热力学分析和原位重量监测”氮化物半导体国际研讨会，IPAP 会议系列。

Y.KUMAGAI: "Growth of Thick Hexagonal GaN Layer on GaAs (111) A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epita"Jpn.J.Appl.Phys.. 39. L703-L706 (2000)

Y.KUMAGAI：“通过金属有机氯化氢气相外延在 GaAs (111) A 表面上生长厚六方 GaN 层以实现独立式 GaN”Jpn.J.Appl.Phys.. 39. L703-L706 (2000)