Thermodynamic interactive database for vapor phase epitaxy using internet

气相外延（VPE）包括金属有机物气相外延（MOVPE）是制备高性能光电器件的重要方法。VPE在低温下从蒸气中提供高质量的外延层。III族氮化物及其合金是应用于短波长发光器件的有前途的材料。特别是，InGaN基异质结构的制造已经被大量研究人员广泛研究用于紫/蓝激光二极管（LD）。在本项目中，我们研究了一种新的热力学分析系统，用于III族氮化物GaN、InN、AlN、InGaN、AlGaN和AlInN以及其他III-V族化合物半导体如InGaAsP、InAsAs、InGaP的气相外延生长，因为外延生长系统的热力学分析提供了有用的生长条件信息。我们建立的新的热力学分析系统通过互联网向任何希望找到最佳条件的研究人员提供生长的可供选择的条件。

Vapor phase epitaxy (VPE) including metalorganic vapor phase epitaxy (MOVPE) is a very important method for high-functional opto- and electronic- devices. VPE provides high quality epitaxial layers from vapor at low temperature. Group III nitrides and their alloys are promising materials for applications to short-wavelength light emitting devices. In particular, fabrication of InGaN-based heterostructures has been extensively studied for violet/blue laser diodes (LDs) by a large number of researchers. Especially, MOVPE is used generally for the epitaxial growth of these structures.In this project, we have investigated a new thermodynamic analysis system for vapor phase epitaxy of the group III nitrides, GaN, InN, AIN, InGaN, AlGaN and AlInN, and the other III-V compound semiconductors such as InGaAsP, InAsAs, InGaP because the thermodynamic analysis of epitaxial growth system provides usefull information on the growth conditions. The new thermodynamic analysis system which we set up informs 〓vorable conditions for the growth through the internet web to any researchers who want to find out the best conditions.