Thermodynamic interactive database for vapor phase epitaxy using internet

使用互联网的气相外延热力学交互式数据库

• 批准号: 13650004
• 负责人: KOUKITU Akinori
• 金额: $ 2.24万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650004/
• 关键词: Internet; Data base using calculation system; Web; Thermodynamic analysis; Vapor Phase Epitaxy; Compound Semiconductor; 気相エピタキシャル成長; 窒化物; データーベース; 光デバイス; 電子デバイス

Vapor phase epitaxy (VPE) including metalorganic vapor phase epitaxy (MOVPE) is a very important method for high-functional opto- and electronic- devices. VPE provides high quality epitaxial layers from vapor at low temperature. Group III nitrides and their alloys are promising materials for applications to short-wavelength light emitting devices. In particular, fabrication of InGaN-based heterostructures has been extensively studied for violet/blue laser diodes (LDs) by a large number of researchers. Especially, MOVPE is used generally for the epitaxial growth of these structures.In this project, we have investigated a new thermodynamic analysis system for vapor phase epitaxy of the group III nitrides, GaN, InN, AIN, InGaN, AlGaN and AlInN, and the other III-V compound semiconductors such as InGaAsP, InAsAs, InGaP because the thermodynamic analysis of epitaxial growth system provides usefull information on the growth conditions. The new thermodynamic analysis system which we set up informs 〓vorable conditions for the growth through the internet web to any researchers who want to find out the best conditions.

气相外延（VPE）包括金属有机物气相外延（MOVPE）是制备高性能光电器件的重要方法。VPE在低温下从蒸气中提供高质量的外延层。III族氮化物及其合金是应用于短波长发光器件的有前途的材料。特别是，InGaN基异质结构的制造已经被大量研究人员广泛研究用于紫/蓝激光二极管（LD）。在本项目中，我们研究了一种新的热力学分析系统，用于III族氮化物GaN、InN、AlN、InGaN、AlGaN和AlInN以及其他III-V族化合物半导体如InGaAsP、InAsAs、InGaP的气相外延生长，因为外延生长系统的热力学分析提供了有用的生长条件信息。我们建立的新的热力学分析系统通过互联网向任何希望找到最佳条件的研究人员提供生长的可供选择的条件。

项目成果

A.Koukitu: "Thermodynamics on tri-halide vapor-phase epitaxy of GaN and In_x Ga_<1x>N using CaCl_3 and InCl_3"J.Cryseal Groweh. 231. 57-67 (2001)

A.Koukitu：“使用 CaCl_3 和 InCl_3 进行 GaN 和 In_x Ga_<1x>N 的三卤化物气相外延的热力学”J.Cryseal Groweh。

Hisashi MURAKAMI: "Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs(111)A and (111)B substrates"J.Cryst.Growth. 247. 245-250 (2003)

Hisashi MURAKAMI：“衬底极性对 GaAs(111)A 和 (111)B 衬底上低温 GaN 缓冲层生长的影响”J.Cryst.Growth。

A.Koukitu: "Comparison of GaN Buffer Layers grown on GaAs (111)A and (111)B Surfaces"phys. stat. sol. 188. 549-552 (2001)

A.Koukitu：“在 GaAs (111)A 和 (111)B 表面上生长的 GaN 缓冲层的比较”phys。

Akinori KOUKITU: "Surface polarity dependence of decomposition and growth of GaN studied by in situ gravimetric monitoring"J.Cryst.Growth. 246. 230-236 (2002)

Akinori KOUKITU：“通过原位重力监测研究 GaN 分解和生长的表面极性依赖性”J.Cryst.Growth。

Yoshihiro KANGAWA: "Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of In_xGa_<1-x>N film and input mole ratio during molecular bean epitaxy"Jpn.J.Appl.Phys.. 42. L95-L98 (2003)

Yoshihiro KANGAWA：“InN和GaN衬底的晶格约束对分子豆外延过程中In_xGa_<1-x>N薄膜的固体成分与输入摩尔比之间关系的影响”Jpn.J.Appl.Phys.. 42. L95-L98