Thick Epitaxy of AlN and AlGaN with controlling source molecules and nano-crystal field.

控制源分子和纳米晶场的 AlN 和 AlGaN 厚外延。

基本信息

批准号：
15360004
负责人：
KOUKITU Akinori
金额：
$ 9.98万
依托单位：
National University Corporation Tokyo University of Agriculture and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

项目摘要

Since AlN and AlGaN have lattice constants close to that of GaN, high thermal conductivity and wide band gap, AlN and AlGaN have been identified as a promising substrate material for the fabrication of high-power electronic devices and ultraviolet(UV) optoelectronic devices. A promising growth system is a Hydride Vapor Phase Epitaxy(HVPE), which delivers a high growth rate. However, investigations concerning HVPE of AlN have been limited, because AlCl used as a source molecule of Al reacts with quarts(SiO_2).By the thermodynamic analysis and the experiment in the investigation, it was found that AlCl_3 doesn't react with SiO_2 and HVPE of AlN is possible using AlCl_3 and NH_3 as source gases. Then, we tried to grow AlN layer by HVPE system. Successful AlN HVPE on sapphire substrates was shown. Aθ-2θ mode X-ray diffraction(XRD) profile of the layer (2.1μm thickness) grown with input partial pressures of HCl and NH_3 of 6.0 x 10^<-3> atm and 4.0x10^<-2> atm, respectively. In addition, aside from the peaks due to the sapphire substrate, only the diffraction peaks related to c-axis-oriented hexagonal AlN was onserbed.Next, we investigated a thermodynamic analysis a possibility of HVPE growth of AlGaN ternary alloys. In HVPE system for AlGaN alloy, the source molecules are AlCl_3,GaCl and NH_3. A thermodynamic analysis of HVP) of AlGaN using AiCl_3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we showed that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).

由于Aln和Algan具有接近GAN的晶格常数，因此高热导电率和宽带隙，因此已将ALN和Algan鉴定为可用于制造高功率电子设备和紫外线（UV）OptoelectRonic设备的有前途的基板材料。有希望的生长系统是氢化蒸气相外延（HVPE），可提供高增长率。然而，有关ALN HVPE的研究受到限制，因为ALCL用作AL反应的源分子与夸脱的反应（SIO_2）。通过热力学分析和研究中的实验，发现ALCL_3不与AlCl_3和NH_3 AS Source as as source as as source as as s as source as as s as s as Source as as sio_2和hvpe进行反应。然后，我们尝试通过HVPE系统生长Aln层。显示了蓝宝石底物上成功的Aln HVPE。 Aθ-2θ模式X射线衍射（XRD）分别具有6.0 x 10^<-3> atm和4.0x10^<-2> atm的HCl和NH_3的输入部分压力生长的层（2.1μm厚度）。此外，除了由于蓝宝石底物而引起的峰外，仅吞噬了与面向C轴的六角形ALN相关的衍射峰。我们研究了热力学分析的可能性，可以使Algan Ternary合金的HVPE生长。在用于Algan合金的HVPE系统中，源分子为ALCL_3，GACL和NH_3。描述了使用AICL_3和GACL作为III组前体的HVP的热力学分析）。对于载气中输入比，温度和氢的二压值的值范围，我们计算了Algan中Aln和GAN沉积的等效部分压力和驱动力。结果，我们表明在低氢（载气中<10％氢）的低部分压力下，可能受控的Algan HVPE是可能的。