Development of Hetero-Materials Integration Technology for Multi-Functional Hybrid Large-Scale Integrated Circuits

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To achieve hybrid-integration of multi-functional devices on Si platform, formation techniques of Si1-XGeX(X:0-1) on insulator have been investigated. First, the successive rapid-melting-growth technique has been developed, by utilizing the Ge fraction-dependent melting point of SiGe. This enables formation of multi-layered SiGe templates with different Ge fractions. Second, SiGe template with laterally-graded Ge fraction is achieved by controlling Si segregation during rapid-melting growth. These techniques facilitate heterogeneous integration of new functional devices on Si platform.