High-Quality Formation of SiGe on Flexible Substrates for Transistor Application

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Low-temperature growth of SiGe has been investigated to realize the flexible system-in-displays. We have developed a new solid-phase crystallization technique, which uses catalytic effects of some metals and electric-fields. Consequently, the low-temperature crystallization (<250℃) becomes possible. Moreover, new type of transistors having source and drain electrodes with Schottky barrier contacts have been fabricated. Very high carrier mobility compared to poly-Si has been demonstrated.