Low-temperature orientation-control of SiGe quasi-single crystal on glass and its device application

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Low temperature orientation control of SiGe quasi-single crystals and its device application have been investigated.The solid-phase crystallization of a-Si/a-Ge/glass and a-Si/a-Ge/a-Si/glass stacked structures was studied systematically. It was found that two-dimensional nucleation was selectively induced by inserting Ge layers thicker than the critical thickness at the interface between the a-Si layer and the glass substrate. This is an important finding for orientation control of SiGe quasi-single crystals.In addition, a novel device structure, suitable for low-temperature processing, was studied, and the fabrication process of the Schottky source/drain structure transistor was established at a low-temperature (≦450℃). Moreover, a good transistor operation of transistors fabricated on the glass substrate was demonstrated.