Growth interfaces of crystals
Growth interfaces of crystals
批准号:
58420019
负责人:
OGAWA Tomoya
金额:
$12.74万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (A)
财政年份:
1983
资助国家:
日本
项目状态:
已结题
起止时间:
1983 至 1985
关键词:
中文摘要
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英文摘要
Crystal growth is one of most impotant techniques in material science and technology and then it is a worth-while research to make clear structure of interfaces during crystal growth, because the quality of crystals will be determined by incorporation of the growth units at the interfaces.Physical and chemical studies on saturated solutions were done precisely to analyze the crystal growth phenomenologically. The concentration and temperature gradient around crystals growing in a two dimensional cell were measured at the growth interface, and the growth rate of the crystals was found to be proportional to the normal component of those gradient. The diffusion coefficient from the ratio of the growth rate to the concentration gradient is in a good agreement with the diffusion constant of the solute in the solution obtained by usual method. It is thus proposed that the molecular state of the solute in saturated solution is very similar to its crystalline state.A sort of roughness on the interface is necessary for crystal growth and then the morphological steps are discussed by using two dimensional Fourier transform to obtain spacial frequency of the structure on the interface.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
日本結晶成長学会誌. 12-1. (1985)
日本晶体生长学会杂志12-1(1985)。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Japan.J.Appl.Phys.23-11. (1984)
日本应用物理杂志 23-11。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
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依托单位:
海外基金