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Electronic properties and transition processes in semiconductor quantum box structures and artificially localized states (super-donors)

Electronic properties and transition processes in semiconductor quantum box structures and artificially localized states (super-donors)
半导体量子盒结构和人工局域态(超级施主)的电子特性和跃迁过程
批准号:
04402030
负责人:
SAKAKI Hiroyuki
金额:
$10.5万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (A)
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1994

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中文摘要
翻译
对于人工定域态,即在磁场中由量子阱组成的磁量子箱(Mag-QB)体系,在杂质层形成的库伦量子箱(Imp-QB)体系,在量子阱中形成的库伦量子箱(Imp-QB)体系,以及通过纳米加工技术形成的量子箱(Fab-QB),我们研究了以下三个主题。首先,我们观察了超晶格中的纵向磁声子共振,磁场下三势垒隧道二极管中通过朗道能级的隧穿过程,以及双势垒隧道二极管中通过供体能级的二维(2D) -0D-2D隧穿过程。此外,我们在电子束制造的QB中观察到旋转门运动和光子辅助隧穿。我们还制作了自组装的InAs量子盒并进行了输运测量。其次,我们研究了超供体能级的能量松弛,以便从理论上和实验上澄清声子瓶颈的存在。我们的理论表明,由于声子散射的抑制,一维耦合量子盒结构中存在声子瓶颈和布洛赫振荡。然而,在与光学和声学散射相关的共振中,在几个meV内相对快速衰减的可能性被证明。实验结果表明,磁场下三势垒共振隧道结构的输运性质和量子阱中电子-空穴系统的快速弛豫过程的光学分析都表明了快速弛豫过程的存在。第三,对于超给体态的光子激发和电离,我们通过在(311)A量子阱中引入Si受体,研究了给体能级的可控性、电导率的温度依赖性和红外响应。
英文摘要
As for artificially localized states, namely, the magnetic quantum box (Mag-QB) systems consisteing of quantum wells at magnetic fields, Coulomb quantum box (Imp-QB) systems formed at impurity, levels in quantum wells, and quantum boxes by nanofabrication technique (Fab-QB), we have studied following three subjects.First, we observed longitudinal magnetophonon resonances in superlattices, tunnelling processes through Landau levels in triple barrier tunnel diodes at magnetic fields, and two-dimension (2D) -0D-2D tunnelling through donor levels in double barrier tunnel diodes. In addition, we observed turnstile motion and photon-assisted tunnelling in an electron-beam-fabricated QB.We also fabricated self-assembled InAs quantum boxes and carried out transport measurements.Second, we examined energy relaxation in super-donor levels in order to clarify presence of phonon bottle-neck both theoretically and experimentally. Our theory showed existence of phonon bottle-neck, and Bloch oscillations in 1D coupled quantum box structures due to suppression of phonon scattering. However, the possibility of relatively fast decay within a few meV at resonance relating to both optical and accoustical scatterings were demonstrated. Experimentally, both transport properties of a triple barrier resonant tunnel structure at magnetic fields and optical analysis of a fast relaxation process in electron-hole systems in quantum wells at magnetic fields suggested presence of fast relaxation process.Third, as for photon excitation and ionization of super-donor states, we investigated controllability of donor levels, temperature dependences of conductivity, and infrared response by introducing Si acceptors in (311) A quantum wells.
期刊论文(34)
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会议论文
H.Noguchi,J.P.Leburton and H.Sakaki: "Transient and steady state analysis of electron transport in one dimensional coupled quantum box structures" Physical Review B. 47. 15593-15600 (1993)
H.Noguchi、J.P.Leburton 和 H.Sakaki:“一维耦合量子盒结构中电子传输的瞬态和稳态分析”物理评论 B. 47. 15593-15600 (1993)
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T.Inoshita,A.Shimizu,Y.Kuramoto,H.Sakaki: "Correlated electron transport through a quantum doti the multi-level effect" Physical Review B. 48. 14725-14728 (1993)
T.Inoshita、A.Shimizu、Y.Kuramoto、H.Sakaki:“通过量子点进行相关电子传输的多级效应”物理评论 B. 48. 14725-14728 (1993)
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通讯作者:
Takeshi Inoshita and Hiroyuki Sakaki: "Electron relaxation in a quantum dot : significance of multi-pnonon processes" Phys.Rev.B,46 (11). 7260-7263 (1992)
Takeshi Inoshita 和 Hiroyuki Sakaki:“量子点中的电子弛豫:多光子过程的重要性”Phys.Rev.B,46 (11)。
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共 33 条
    Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications
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    • 资助金额:
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    • 依托单位:
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    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $10.82万
    • 财政年份:
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    • 负责人:
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    • 批准号:
      12450120
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.0万
    • 财政年份:
      2000
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