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Synthesis of Single Electron Devices and Investigation of Their Circuits and Systems

单电子器件的合成及其电路和系统的研究

基本信息

批准号：
08247104
负责人：
SAKAKI Hiroyuki
金额：
$ 122.3万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research on Priority Areas
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1999
项目状态：
已结题

项目摘要

We investigated a variety of single-electron (SE) and quantum dot (QD) devices and their circuits and systems to explore ways to achieve better performances and unprecedented functions, as summarized below.(l) (GaAs/AlGaAs) FETs with embedded InAs QDs were newly developed. Their memory and photodetector functions were demonstrated by trapping a single electron or hole in each dot. (2) GaSb/InAs systems were selectively oxidized by a conductive AFM tip to form a SE transistor (SET) with clearcut characteristics. (3) Novel LSI-compatible fabrication method was developed to squeeze a Si SOI-MOS channel into a quantum point contact geometry. The device exhibited clear SET characteristics even at 300K and was used to form a binary-decision current switch element. (4) Improved methods to model and simulate SE transistors and memories were developed on the basis of the master rate equation or an extended SPICE framework. Bit error rates of large scale SET systems were assessed and requirements on the normalized bit energy (Eb/kT) and residual charges were clarified. Matched filter logic circuits were proposed to avoid the inherent instability of SET systems. (5) New SET architectures, such as binary decision diagrams, majority logic, and multi-valued logic using multi-electron states, were proposed and their features clarified. (6) Moreover, the response of SE and QD systems to midinfrared (MIR) and THz waves were investigated. New MIR detectors using the photoionization of trapped electrons in QDs were successfully developed. Photon assisted tunneling processes were analysed for triple- barrier SET geometries and were shown to have responsivity ten thousand times as large as that for double barrier geometries.

我们研究了各种单电子（SE）和量子点（QD）器件及其电路和系统，以探索实现更好性能和前所未有功能的方法，如下所述。(l)（GaAs/AlGaAs）场效应晶体管（FET）是最近研制的一种嵌入InAs量子点的器件。通过在每个点中捕获单个电子或空穴，证明了它们的存储器和光电探测器功能。(2)利用导电AFM针尖对GaSb/InAs系统进行了选择性氧化，得到了具有清晰特性的SE晶体管（SET）。(3)提出了一种新的LSI兼容的制造方法，将硅SOI-MOS沟道挤压成量子点接触的几何形状。该器件即使在300 K下也表现出清晰的SET特性，并用于形成二进制判决电流开关元件。(4)改进的方法来建模和模拟SE晶体管和存储器的基础上的主速率方程或扩展的SPICE框架。分析了大规模SET系统的误码率，阐明了对归一化比特能量（Eb/kT）和剩余电荷的要求。提出了匹配滤波器逻辑电路，以避免SET系统的固有不稳定性。(5)新的SET体系结构，如二元决策图，多数逻辑和多值逻辑使用多电子状态，被提出，并阐明其特点。(6)此外，还研究了SE和QD系统对中红外（MIR）和THz波的响应。利用量子点中俘获电子的光电离，成功研制了新型中红外探测器。分析了三势垒SET结构的光子辅助隧穿过程，结果表明其响应度是双势垒结构的一万倍。