Infrared-detector and FET applications and velocity modulation effect using hetero-coupling

红外探测器和 FET 应用以及使用异质耦合的速度调制效应

• 批准号: 07555108
• 负责人: SAKAKI Hiroyuki
• 金额: $ 10.43万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555108/
• 关键词: heterocoupling; velocity modulation; infrered detector; negative mutual conductance; InAs quantum box; memory device; multi-atomic step; intersubband excitation; 二重量子井戸; 共鳴結合; 自己形成InAs量子箱; GaAs(111)B面; サイクロトロン共鳴; 逆HEMT構造; インジウム砒素(InAs); 量子箱

We consider devices that consist of two coupled quantum structures. One can vary drastically the physical properties of such devices by controlling the strength of coupling between the two either electrically or optically. This opens up a possibility for us to fabricate novel devices with unique features that could not have been realized by standard single quantum structure devices. We have therefore studied the following phenomena in order to discuss the possibility of producing FETs using the velocity modulation effect or infrared detectors.(1) We have designed and fabricated an FET that consists of double quantum wells, only one of which is doped with donors. In this device, under normal operational conditions, the electrons confined in the channel with high mobility dominate the transport property of the device. However, by adjusting the gate voltage so that the two quantum wells are in resonance, all electrons will be influenced by the impurities and the mobility will be significa … More ntly reduced. Under such a condition, we observed a negative mutual-conductance.(2) We have designed and fabricated an FET structure that consists of self-assembled InAs quantum dots buried in between channel and gate in an reverse HEMT structure of which the interface of GaAs and n-AlGaAs layrs acts as the transport channel. With this device, we observed that electrons in the channel can be trapped into the quantum dots by controlling the gate electric field, and as a result exhibit velocity modulation or function as a memory device.(3) We have fabricated an FET by growing n-AlGaAs on a vicinal GaAs (111) substrate that consists of multi-atomic steps at an interval of about 20nm. With this device we have investigated the possiblity of controlling electron scattering that occur at step interfaces.(4) In a structure that consists of two quantum wells, photo-generated electrons and holes under electric field relax into diffrent wells. By excitating electrons to the excited states with excitated states in resonance, we observed inter-band luminescence since the electrons can move back and forth between the wells. Less

我们考虑由两个耦合的量子结构组成的设备。人们可以通过控制两者之间的电耦合或光耦合的强度来显著地改变这种器件的物理特性。这为我们制造具有独特功能的新型器件提供了可能性，这些功能是标准单量子结构器件无法实现的。因此，我们研究了以下现象，以讨论使用速度调制效应或红外探测器生产FET的可能性。(1)我们设计并制作了一种双量子威尔斯阱结构的场效应晶体管，其中只有一个量子阱掺杂施主。在该器件中，在正常操作条件下，被限制在沟道中的具有高迁移率的电子主导器件的输运性质。然而，通过调节栅极电压使得两个量子威尔斯共振，所有的电子将受到杂质的影响，并且迁移率将是显著的。 ...更多信息 减少了。在这种情况下，我们观察到一个负的互导。(2)我们设计并制作了一种FET结构，它是由埋在沟道和栅之间的自组装InAs量子点组成的，在反向HEMT结构中，GaAs和n-AlGaAs层的界面作为输运沟道。利用该器件，我们观察到，通过控制栅极电场，沟道中的电子可以被捕获到量子点中，并且因此表现出速度调制或用作存储器件。(3)我们在相邻的GaAs（111）衬底上生长了n-AlGaAs，并在衬底上生长了间距为20 nm的多原子台阶。利用该装置，我们研究了控制台阶界面处电子散射的可能性。(4)在由两个量子威尔斯组成的结构中，光生电子和空穴在电场作用下弛豫到不同的威尔斯阱中。通过将电子激发到激发态与激发态共振，我们观察到带间发光，因为电子可以在威尔斯之间来回移动。少

项目成果

Y.Nakamura: "Novel Magneto-Resistance Oscillations in Laterally Modulated Two-Dimensional Electrons with 20 nm Periodicity Formed on Vicinal(111)B Substrates" Physica B.

Y.Nakamura：“在邻位 (111)B 基板上形成的具有 20 nm 周期的横向调制二维电子中的新型磁阻振荡”Physica B。

M.Rufenacht: "Delayed luminescence induced by intersubband optical excitation in a charge transfer double qunatum well structure" Appl.Phys,Lett.70(9). 1128-1130 (1997)

M.Rufenacht：“电荷转移双量子阱结构中子带间光学激发引起的延迟发光”Appl.Phys,Lett.70(9)。

G.Yusa: "MBE growth of novel GaAs/n-AlGaAs field effect transistor structures with embedded InAs quantum traps and their transport characteristics" Journal of Crystal Growth. 175/176. 730-735 (1997)

G.Yusa：“具有嵌入式 InAs 量子陷阱的新型 GaAs/n-AlGaAs 场效应晶体管结构的 MBE 生长及其传输特性”《晶体生长杂志》。

Y.Nakamura: "Formation of Uniform GaAs Multi-Atomic Steps with 20-3- nm Periodicity and Related Structures in Vicinal(111)B Planes by MBE" J.Electronic Materials.

Y.Nakamura：“通过 MBE 在邻位 (111)B 平面中形成具有 20-3 nm 周期性的均匀 GaAs 多原子台阶和相关结构”J.Electronic Materials。

Y.Ohno, M.Faley, nd H.Sakaki: "Magnetotransport and interlayredge channel tunneling og two-dimensional electrons in a double qunatum well system" Phys.Rev.B54 (4). 636-639 (1996)

Y.Ohno、M.Faley 和 H.Sakaki：“双量子阱系统中的二维电子的磁输运和层间通道隧道效应”Phys.Rev.B54 (4)。