Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications

埋入式II型量子点三角势垒中的电子传输及其光电探测器应用

• 批准号: 23360164
• 负责人: SAKAKI Hiroyuki
• 金额: $ 10.73万
• 依托单位: Toyota Technological Institute
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360164/
• 关键词: 光検出器; 三角障壁; 量子ドット; 量子ロッド; 分子線エピタキシー; 単一光子検出; 光検出; GaAs; GaSb; 光通信波長

In triangular barrier (TB) diodes, formed by placing acceptors in the middle part of an undoped GaAs layer between a pair of n-type electrodes, electrons are normally blocked by the barrier. Electrons can flow, however, if a sufficiently high voltage is applied to offset the barrier effect. Such diodes work also as photo-detectors, as photo-generated holes get accumulated in the vicinity of acceptors and lower the barrier.In this work, we have formed by molecular beam epitaxy novel TB diodes, in which type-II GaSb quantum dots are embedded near the acceptor layer. We have shown that their detector performances are greatly improved because photo-generated holes are mostly trapped by GaSb dots and locally reduce the barrier height. We made also TB diodes in which InGaAs quantum rods are embedded across GaAs TB diodes to show that photo-responses are further enhanced, as the electron flow is allowed only through the rods and greatly affected by photo-holes trapped in the rods.

在三角形势垒（TB）二极管中，通过将受体放置在一对n型电极之间的未掺杂GaAs层的中间部分而形成，电子通常被势垒阻挡。然而，如果施加足够高的电压来抵消势垒效应，电子可以流动。此类二极管还可以用作光探测器，因为光生空穴会在受体附近积累并降低势垒。在这项工作中，我们通过分子束外延形成了新型TB二极管，其中II型GaSb量子点嵌入在受体附近。层。我们已经表明，它们的探测器性能大大提高，因为光生空穴大多被捕获的GaSb点和局部降低的势垒高度。我们还制作了TB二极管，其中InGaAs量子棒嵌入GaAs TB二极管中，以表明光响应进一步增强，因为电子流仅允许通过棒，并且受到棒中捕获的光空穴的极大影响。

项目成果

Triangular-barrier quantum rod photodiodes : Their fabrication and detector characteristics

三角势垒量子棒光电二极管：其制造和探测器特性

• DOI: 10.1063/1.4867242
• 发表时间: 2014
• 期刊: Appl. Phys. Lett
• 作者: M. Ohmori;Y. Kobayashi;P. Vitushinskiy;S. Nakamura;T. Kojima;H. Sakaki
• 通讯作者: H. Sakaki

ナノ細線フォトトランジスタの形成と光検出特性の評価

纳米线光电晶体管的形成和光电检测特性的评估

• 发表时间: 2011
• 作者: 内田智久;高田祐介;中嶋誠二;藤沢浩訓;小舟正文;坂田修身;勝矢良雄;清水勝;小林由幸,大森雅登,Vitushinskiy Pavel,榊裕之
• 通讯作者: 小林由幸,大森雅登,Vitushinskiy Pavel,榊裕之

Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs

界面分级对GaAs中GaSb II型量子点电子态和光学跃迁的影响

• 发表时间: 2010
• 作者: 川津琢也;榊裕之
• 通讯作者: 榊裕之

Fabrication of InAs nanoscale rings by droplet epitaxy and their optical properties

液滴外延法制备InAs纳米环及其光学性能

• 发表时间: 2012
• 作者: T. Noda;M. Jo;T. Mano;T. Kawazu;H. Sakaki
• 通讯作者: H. Sakaki

量子井戸太陽電池を用いた二段階光吸収によるフォトカレント生成

使用量子阱太阳能电池通过两步光吸收产生光电流

• 作者: 前田貴博;西正博;新浩一;Yasutada Oohama and Yutaka Jitsumatsu;Masayuki Nakamoto and William. I. Milne;野田武司，間野高明，Martin Elborg，川津琢也，Liyuan Han，榊裕之
• 通讯作者: 野田武司，間野高明，Martin Elborg，川津琢也，Liyuan Han，榊裕之