Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications
Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications
批准号:
23360164
负责人:
SAKAKI Hiroyuki
金额:
$10.73万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011-04-01 至 2014-03-31
中文摘要
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英文摘要
In triangular barrier (TB) diodes, formed by placing acceptors in the middle part of an undoped GaAs layer between a pair of n-type electrodes, electrons are normally blocked by the barrier. Electrons can flow, however, if a sufficiently high voltage is applied to offset the barrier effect. Such diodes work also as photo-detectors, as photo-generated holes get accumulated in the vicinity of acceptors and lower the barrier.In this work, we have formed by molecular beam epitaxy novel TB diodes, in which type-II GaSb quantum dots are embedded near the acceptor layer. We have shown that their detector performances are greatly improved because photo-generated holes are mostly trapped by GaSb dots and locally reduce the barrier height. We made also TB diodes in which InGaAs quantum rods are embedded across GaAs TB diodes to show that photo-responses are further enhanced, as the electron flow is allowed only through the rods and greatly affected by photo-holes trapped in the rods.
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ナノ細線フォトトランジスタの形成と光検出特性の評価
纳米线光电晶体管的形成和光电检测特性的评估
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[内田智久, 高田祐介, 中嶋誠二, 藤沢浩訓, 小舟正文, 坂田修身, 勝矢良雄, 清水勝, 小林由幸,大森雅登,Vitushinskiy Pavel,榊裕之]
通讯作者:
小林由幸,大森雅登,Vitushinskiy Pavel,榊裕之
Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs
界面分级对GaAs中GaSb II型量子点电子态和光学跃迁的影响
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[川津琢也, 榊裕之]
通讯作者:
榊裕之
Current-voltage characteristics and their wavelength dependences of GaAs/AlGaAs coupled quantum well solar cells
GaAs/AlGaAs耦合量子阱太阳能电池的电流-电压特性及其波长依赖性
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[T. Noda, Y. Ding, M. Jo, T. Mano, T. Kawazu, L. Han, H. Sakaki]
通讯作者:
H. Sakaki
Fabrication of InAs nanoscale rings by droplet epitaxy and their optical properties
液滴外延法制备InAs纳米环及其光学性能
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki]
通讯作者:
H. Sakaki
量子井戸太陽電池を用いた二段階光吸収によるフォトカレント生成
使用量子阱太阳能电池通过两步光吸收产生光电流
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[前田貴博, 西正博, 新浩一, Yasutada Oohama and Yutaka Jitsumatsu, Masayuki Nakamoto and William. I. Milne, 野田武司,間野高明,Martin Elborg,川津琢也,Liyuan Han,榊裕之]
通讯作者:
野田武司,間野高明,Martin Elborg,川津琢也,Liyuan Han,榊裕之
共 57 条
New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions
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批准号:20360163
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.82万
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财政年份:2008
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负责人:SAKAKI Hiroyuki
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依托单位:
Control of electrons and holes by quantum rings and related nanostructures and its device applications
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批准号:17206034
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$27.54万
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财政年份:2005
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负责人:SAKAKI Hiroyuki
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依托单位:
Physics and controlled properties of micro-and nano-scale granular semiconductor structures
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批准号:12450120
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.0万
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财政年份:2000
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负责人:SAKAKI Hiroyuki
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依托单位:
Study of electronic states in 10nm-scale semiconductor quantum dots and exploration of their memory functions
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批准号:09450136
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.82万
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财政年份:1997
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负责人:SAKAKI Hiroyuki
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依托单位:
Synthesis of Single Electron Devices and Investigation of Their Circuits and Systems
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批准号:08247104
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$122.3万
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财政年份:1996
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负责人:SAKAKI Hiroyuki
-
依托单位:
Control of nano-scale quantum wire structures and optocal properties of one-dimensional excitons
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批准号:07455131
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.42万
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财政年份:1995
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负责人:SAKAKI Hiroyuki
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依托单位:
Infrared-detector and FET applications and velocity modulation effect using hetero-coupling
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批准号:07555108
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$10.43万
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财政年份:1995
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负责人:SAKAKI Hiroyuki
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依托单位:
Electronic properties and transition processes in semiconductor quantum box structures and artificially localized states (super-donors)
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批准号:04402030
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$10.5万
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财政年份:1992
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负责人:SAKAKI Hiroyuki
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依托单位:
Quantum States and Transport Phenomena of Two-and One-dimensional Electrons in In-plane Surface Superlattice Structures
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批准号:02452145
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.71万
-
财政年份:1990
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负责人:SAKAKI Hiroyuki
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依托单位:
Development of High-speed Resonant Tunneling Diodes for Room Temperature Application
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批准号:62850067
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$6.91万
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财政年份:1987
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负责人:SAKAKI Hiroyuki
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依托单位:
Research on Dynamics of Two-dimensional Carriers in Ultrathin semiconductor Heterostructure Devices
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批准号:61460122
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.35万
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财政年份:1986
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负责人:SAKAKI Hiroyuki
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依托单位: