Physics and controlled properties of micro-and nano-scale granular semiconductor structures

微米级和纳米级颗粒半导体结构的物理和受控特性

• 批准号: 12450120
• 负责人: SAKAKI Hiroyuki
• 金额: $ 8万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450120/
• 关键词: Granular materials; quantum dots; anti-dots; Electron scattering; quantum rings; localization; Electron relaxation; nanostructures; InAsドット; 零次元電子; プレーナ起格子

(1) As a model system of nano-scale semiconductor structures, we have grown and investigated self-organized InAs quantum dots and studied their various properties. Specifically, we have examined how some of the channel electronics in n-AlGaAs/GaAs heterojunctions are trapped by dots embedded in the proximity of the channel and how they are scattered and dephased by charged dots. We have examined also potentials of these systems for memory and photodetector applications, as trapped electrons in each dot can be erased by interband photo excitations. Dots can not only third neutralized, but also positively charged by trapping positive holes. Electron relaxations from the excited states to the ground level are also investigated and shown to be well described by polaron effects.(2) To expand the research forefront of granular semiconductor structure, we have studied a series of dots formed in other material systems. In particular, AlGaSb dots embedded in GaAs quantum well is shown to induce a quantum ring state, as an electron is bound by a positively charged typeII dot system. Strained dots formed by InP islands on InGaAs well are found to show unique photo luminescence spectra, which are modulated by tera hertz radiations. Their device applications are discussed.

(1)作为纳米级半导体结构的模型体系，我们生长和研究了自组织InAs量子点，并研究了它们的各种性质。具体地说，我们研究了n-AlGaAs/GaAs异质结中的一些沟道电子是如何被嵌入在沟道附近的点俘获的，以及它们是如何被带电的点散射和反相的。我们还研究了这些系统在存储和光电探测器应用方面的潜力，因为每个点中的俘获电子可以通过带间光激发来擦除。DOTS不仅可以第三次中和，还可以通过捕获正电空穴而带上正电荷。我们还研究了从激发态到基态的电子弛豫，发现极化子效应可以很好地描述这一现象。(2)为了拓展颗粒半导体结构的研究前沿，我们研究了在其他材料体系中形成的一系列点。特别是，由于电子被带正电的II型点系统束缚，嵌入在GaAs量子阱中的AlGaSb点被证明诱导了量子环态。在InGaAs势垒上形成的InP岛形成的应变点显示出独特的光致发光光谱，该光谱受太赫兹辐射的调制。讨论了它们的器件应用。

项目成果

T.Noda, Y.Nagamune, Y.Nakamura, H.Sakaki: "Electron transport and optical properties of InGaAs quantum wells with quasi-perildic (Λ〜30nm) interface corrugation grown on vicinal (111 )B GaAs"Physica E. 13. 333-336 (2002)

T.Noda、Y.Nagamune、Y.Nakamura、H.Sakaki：“在邻位 (111 )B GaAs 上生长的具有准周界 (Λ〜30nm) 界面波纹的 InGaAs 量子阱的电子传输和光学特性”Physica E. 13 .333-336 (2002)

I.Kamiya et al.: "Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure"Physica E. 13. 131-133 (2002)

I.Kamiya 等人：“通过微型 RTD 结构中的单个自组装 InAs 量子点的共振隧道效应”Physica E. 13. 131-133 (2002)

I.Kamiya et al.: "Density and size control of self-assembled InAs quantum dots : preparation of very low-density dots by post-annealing"Physica E. 13. 1172-1175 (2002)

I.Kamiya 等人：“自组装 InAs 量子点的密度和尺寸控制：通过后退火制备极低密度点”Physica E. 13. 1172-1175 (2002)

I.Kamiya et al.: "Density and size control of self-assembled InAs quantum dots preparation of very low-density dots by post-annealing"Physica E. 13. 1172-1175 (2002)

I.Kamiya 等人：“通过后退火制备极低密度点的自组装 InAs 量子点的密度和尺寸控制”Physica E. 13. 1172-1175 (2002)

榊 裕之: "Nano Technology (原版 Nanotechnology 日本語版)第5章 原子制御したナノ構造の構築とデバイスへの応用"(原書英文版 Springer Verlag) 発行所:株式会社エヌ・ティー・エス. 43 (2002)

Hiroyuki Sakaki：《纳米技术（原版 Nanotechnology 日文版）第 5 章原子控制纳米结构的构建及其在器件中的应用》（原版英文版 Springer Verlag）出版商：NTS Co., Ltd. 43（2002））