New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions
New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions
批准号:
20360163
负责人:
SAKAKI Hiroyuki
金额:
$10.82万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010
中文摘要
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英文摘要
New ways are developed to form nanostructures in which one or more quantum dots (QDs) are placed near a channel consisting of a single or plural quantum wires. When the structures are illuminated to generate carriers, electrons or holes are captured by QDs and affect the channel conductance, bringing forth the photoconductive functions. To form these structures, QDs were made by employing self assembly techniques, while wire structures are made by such methods as (1) the formation of multi-atomic steps on a vicinal GaAs substrate, (2) the stacking of multiple QDs, and (3) lithography.
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DOI:
10.1063/1.2996414
发表时间:
2008-10
期刊:
Applied Physics Letters
影响因子:
4
作者:
[T. Kawazu;H. Sakaki]
通讯作者:
T. Kawazu;H. Sakaki
液滴エピタキシーによるInGaAs/InP上InAsリング構造の作製
液滴外延法在 InGaAs/InP 上制备 InAs 环结构
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[野田武司, 他]
通讯作者:
他
InAs量子ドット系における光励起キャリアの発光再結合と濡れ層での拡散課程
InAs量子点体系中光生载流子的发射复合及润湿层扩散过程
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[田中, 伊熊, 津田, 小出,飯尾,栗原,岩田,山本, 高橋一真]
通讯作者:
高橋一真
Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy
液滴外延形成的 GaAs 中 GaSb 量子点的热退火
DOI:
--
发表时间:
2010
期刊:
Physica E-Low-Dimensional Systems & Nano-structures
影响因子:
--
作者:
[H. Fuiiwara, T. Takeuchi, Y. Otake, M. Yoshimoto, H. Kawaguchi, T.Kawazu]
通讯作者:
T.Kawazu
Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs
界面分级对GaAs中GaSb II型量子点电子态和光学跃迁的影响
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[川津琢也, 榊裕之]
通讯作者:
榊裕之
共 46 条
Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications
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批准号:23360164
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.73万
-
财政年份:2011
-
负责人:SAKAKI Hiroyuki
-
依托单位:
Control of electrons and holes by quantum rings and related nanostructures and its device applications
-
批准号:17206034
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$27.54万
-
财政年份:2005
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负责人:SAKAKI Hiroyuki
-
依托单位:
Physics and controlled properties of micro-and nano-scale granular semiconductor structures
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批准号:12450120
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.0万
-
财政年份:2000
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负责人:SAKAKI Hiroyuki
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依托单位:
Study of electronic states in 10nm-scale semiconductor quantum dots and exploration of their memory functions
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批准号:09450136
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$5.82万
-
财政年份:1997
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负责人:SAKAKI Hiroyuki
-
依托单位:
Synthesis of Single Electron Devices and Investigation of Their Circuits and Systems
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批准号:08247104
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$122.3万
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财政年份:1996
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负责人:SAKAKI Hiroyuki
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依托单位:
Control of nano-scale quantum wire structures and optocal properties of one-dimensional excitons
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批准号:07455131
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.42万
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财政年份:1995
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负责人:SAKAKI Hiroyuki
-
依托单位:
Infrared-detector and FET applications and velocity modulation effect using hetero-coupling
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批准号:07555108
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$10.43万
-
财政年份:1995
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负责人:SAKAKI Hiroyuki
-
依托单位:
Electronic properties and transition processes in semiconductor quantum box structures and artificially localized states (super-donors)
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批准号:04402030
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项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$10.5万
-
财政年份:1992
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负责人:SAKAKI Hiroyuki
-
依托单位:
Quantum States and Transport Phenomena of Two-and One-dimensional Electrons in In-plane Surface Superlattice Structures
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批准号:02452145
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项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$3.71万
-
财政年份:1990
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负责人:SAKAKI Hiroyuki
-
依托单位:
Development of High-speed Resonant Tunneling Diodes for Room Temperature Application
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批准号:62850067
-
项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$6.91万
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财政年份:1987
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负责人:SAKAKI Hiroyuki
-
依托单位:
Research on Dynamics of Two-dimensional Carriers in Ultrathin semiconductor Heterostructure Devices
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批准号:61460122
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项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.35万
-
财政年份:1986
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负责人:SAKAKI Hiroyuki
-
依托单位:
海外基金