Quantum States and Transport Phenomena of Two-and One-dimensional Electrons in In-plane Surface Superlattice Structures
Quantum States and Transport Phenomena of Two-and One-dimensional Electrons in In-plane Surface Superlattice Structures
批准号:
02452145
负责人:
SAKAKI Hiroyuki
金额:
$3.71万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
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英文摘要
(A) Research results on Planar Superlattices :A theoretical work has been done on electronic states in grid-inserted (GI) quantum well (QW) structures to show that both quantum wire (QWI) states as well as planar superlattice (PSL) states can be synthesized by setting appropriately the thickness and period of AlAs grids in the middle of GaAs QW layers. Transport properties and interband optical spectra of such GI-QW structures have been studied both experimentally and theoretically. In particular, influences of random potentials on electronic properties in the presence of periodic potential have been assessed ; for example, the negative transconductance characteristic caused by the minigap formation and the polarization anisotropy of optical spectra are examined.(B) Research Results on Quantum Wires :A design theory is developed to analyse the quantum states and concentration Ni of one-dimensional electrons in modulation-doped AlGaAs-GaAs edge-quantum wires. It has been shown that the maximum concentration Ni in the ground subband before filling the second subband is achieved when the quantum well width is set around 200* at which the influence of ionized impurity scattering is minimized. In addition, the interface roughness scattering in the edge quantum wires has been evaluated to show that the scattering can be substantially suppressed when Ni is set above 1-2xlO^6/cm. Transport experiment on wires have been also carried out and new insights have been obtained including the Coulomb blockade.
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Hiroyasu Noguchi: "Observation of opticalーphononーscattering inhibited region in longitudinal magnetoresistance in superlattices:" Collected papers of 5th Int.Conf.on modulated semiconductor structures. 388-390 (1991)
Hiroyasu Noguchi:“超晶格纵向磁阻中光学声子散射抑制区域的观察:”第五届 Int.Conf.on 调制半导体结构论文集 388-390 (1991)。
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榊 裕之: "量子マイクロ構造における新物理概念の探索と応用ー波動関数工学と立体量子構造を中心にー" 応用物理. 60. 358-360 (1991)
Hiroyuki Sakaki:“量子微结构中新物理概念的探索和应用——聚焦波函数工程和三维量子结构”应用物理 60. 358-360 (1991)。
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作者:
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通讯作者:
Hiroyasu Noguchi: "Observation of optical-phonon-scattering inhibited region in longitudinal magnetoresistance in superlattices:" Collected papers of 5th Int.Conf.on modulated semiconductor structures. 388-390 (1991)
Hiroyasu Noguchi:“超晶格纵向磁阻中光学声子散射抑制区域的观察:”第五届调制半导体结构国际会议论文集。
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Masahiro Tsuchiya, Hiroharu sugawara, Takeshi Inoshita, Akira Simizu, and Hiroyuki Sakaki: "Electron concentration and mobility in selectivity doped edge quantum wires :" Collected papers of 5th Int. Conf. on modulated semiconductor structures. (1991)
Masahiro Tsuchiya、Hiroharu sukawara、Takeshi Inoshita、Akira Simizu 和 Hiroyuki Sakaki:“选择性掺杂边缘量子线中的电子浓度和迁移率:”第五届 Int. 论文集。
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通讯作者:
Junichi Motohisa and Hiroyuki Sakaki: "Interface roughness scattering and electron mobility in quantum wires" Appl. Phys. Lett.60-11. (1992)
Junichi Motohisa 和 Hiroyuki Sakaki:“量子线中的界面粗糙度散射和电子迁移率”Appl。
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共 17 条
Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications
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批准号:23360164
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.73万
-
财政年份:2011
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负责人:SAKAKI Hiroyuki
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依托单位:
New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions
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批准号:20360163
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.82万
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财政年份:2008
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负责人:SAKAKI Hiroyuki
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依托单位:
Control of electrons and holes by quantum rings and related nanostructures and its device applications
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批准号:17206034
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$27.54万
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财政年份:2005
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负责人:SAKAKI Hiroyuki
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依托单位:
Physics and controlled properties of micro-and nano-scale granular semiconductor structures
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批准号:12450120
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.0万
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财政年份:2000
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负责人:SAKAKI Hiroyuki
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依托单位:
Study of electronic states in 10nm-scale semiconductor quantum dots and exploration of their memory functions
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批准号:09450136
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.82万
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财政年份:1997
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负责人:SAKAKI Hiroyuki
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依托单位:
Synthesis of Single Electron Devices and Investigation of Their Circuits and Systems
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批准号:08247104
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$122.3万
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财政年份:1996
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负责人:SAKAKI Hiroyuki
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依托单位:
Control of nano-scale quantum wire structures and optocal properties of one-dimensional excitons
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批准号:07455131
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.42万
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财政年份:1995
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负责人:SAKAKI Hiroyuki
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依托单位:
Infrared-detector and FET applications and velocity modulation effect using hetero-coupling
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批准号:07555108
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$10.43万
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财政年份:1995
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负责人:SAKAKI Hiroyuki
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依托单位:
Electronic properties and transition processes in semiconductor quantum box structures and artificially localized states (super-donors)
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批准号:04402030
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$10.5万
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财政年份:1992
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负责人:SAKAKI Hiroyuki
-
依托单位:
Development of High-speed Resonant Tunneling Diodes for Room Temperature Application
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批准号:62850067
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$6.91万
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财政年份:1987
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负责人:SAKAKI Hiroyuki
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依托单位:
Research on Dynamics of Two-dimensional Carriers in Ultrathin semiconductor Heterostructure Devices
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批准号:61460122
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.35万
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财政年份:1986
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负责人:SAKAKI Hiroyuki
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依托单位: