Quantum States and Transport Phenomena of Two-and One-dimensional Electrons in In-plane Surface Superlattice Structures

面内表面超晶格结构中二维和一维电子的量子态和输运现象

• 批准号: 02452145
• 负责人: SAKAKI Hiroyuki
• 金额: $ 3.71万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-02452145/
• 关键词: planar superlattice; edge quantum wire; Bragg reflection; polarization dependence; anisotropic electronic states; roughness scattering; negative transconductance; 多次元量子構造; 分子線エピタキシ-; グリッド挿入型ヘテロ接合; 高エネルギ-反射電子線回析; 選択成長

(A) Research results on Planar Superlattices :A theoretical work has been done on electronic states in grid-inserted (GI) quantum well (QW) structures to show that both quantum wire (QWI) states as well as planar superlattice (PSL) states can be synthesized by setting appropriately the thickness and period of AlAs grids in the middle of GaAs QW layers. Transport properties and interband optical spectra of such GI-QW structures have been studied both experimentally and theoretically. In particular, influences of random potentials on electronic properties in the presence of periodic potential have been assessed ; for example, the negative transconductance characteristic caused by the minigap formation and the polarization anisotropy of optical spectra are examined.(B) Research Results on Quantum Wires :A design theory is developed to analyse the quantum states and concentration Ni of one-dimensional electrons in modulation-doped AlGaAs-GaAs edge-quantum wires. It has been shown that the maximum concentration Ni in the ground subband before filling the second subband is achieved when the quantum well width is set around 200* at which the influence of ionized impurity scattering is minimized. In addition, the interface roughness scattering in the edge quantum wires has been evaluated to show that the scattering can be substantially suppressed when Ni is set above 1-2xlO^6/cm. Transport experiment on wires have been also carried out and new insights have been obtained including the Coulomb blockade.

(A)平面超晶格的研究结果：对栅格插入(GI)量子阱(QW)结构中的电子态进行了理论研究，结果表明，通过适当设置栅格插入(GI)量子阱(QW)层中间AlAs栅格的厚度和周期，既可以合成量子线(QWI态)态，也可以合成平面超晶格(PSL)态。对这种GI-QW结构的输运特性和带间光谱进行了实验和理论研究。特别是在周期势存在的情况下，研究了无规势对电子性质的影响；例如，考察了由小能隙形成引起的负跨导特性和光谱的极化各向异性。(B)量子线的研究结果：发展了一种设计理论来分析调制掺杂的AlGaAsGaAs边量子线中一维电子的量子态和浓度。结果表明，当量子阱宽度设置在200*左右时，在填充第二个子带之前，Ni在基带中的浓度达到最大，此时电离杂质散射的影响最小。此外，我们还对边缘量子线中的界面粗糙度散射进行了评估，结果表明，当Ni设置在1-2×10~(-6)/cm以上时，散射就能得到很大程度的抑制。还进行了导线传输实验，获得了包括库仑封锁在内的新见解。

项目成果

Hiroyasu Noguchi: "Observation of opticalーphononーscattering inhibited region in longitudinal magnetoresistance in superlattices:" Collected papers of 5th Int.Conf.on modulated semiconductor structures. 388-390 (1991)

Hiroyasu Noguchi：“超晶格纵向磁阻中光学声子散射抑制区域的观察：”第五届 Int.Conf.on 调制半导体结构论文集 388-390 (1991)。

榊 裕之: "量子マイクロ構造における新物理概念の探索と応用ー波動関数工学と立体量子構造を中心にー" 応用物理. 60. 358-360 (1991)

Hiroyuki Sakaki：“量子微结构中新物理概念的探索和应用——聚焦波函数工程和三维量子结构”应用物理 60. 358-360 (1991)。

Hiroyasu Noguchi: "Observation of optical-phonon-scattering inhibited region in longitudinal magnetoresistance in superlattices:" Collected papers of 5th Int.Conf.on modulated semiconductor structures. 388-390 (1991)

Hiroyasu Noguchi：“超晶格纵向磁阻中光学声子散射抑制区域的观察：”第五届调制半导体结构国际会议论文集。

Masahiro Tsuchiya, Hiroharu sugawara, Takeshi Inoshita, Akira Simizu, and Hiroyuki Sakaki: "Electron concentration and mobility in selectivity doped edge quantum wires :" Collected papers of 5th Int. Conf. on modulated semiconductor structures. (1991)

Masahiro Tsuchiya、Hiroharu sukawara、Takeshi Inoshita、Akira Simizu 和 Hiroyuki Sakaki：“选择性掺杂边缘量子线中的电子浓度和迁移率：”第五届 Int. 论文集。

Junichi Motohisa and Hiroyuki Sakaki: "Interface roughness scattering and electron mobility in quantum wires" Appl. Phys. Lett.60-11. (1992)

Junichi Motohisa 和 Hiroyuki Sakaki：“量子线中的界面粗糙度散射和电子迁移率”Appl。