Formation of Functional Thin Films by a Double Plasma Device

我们提出了一种新的等离子体处理技术，称为“双等离子体法”，其中两个独立的等离子体连接形成离子束或电子束。在双等离子体装置中，可以通过调节两个等离子体之间的外部偏置电压来控制反应等离子体中带电粒子的能量分布函数。本课题采用ECR微波放电和冷阴极辉光放电，构建了双等离子体装置。实验结果总结如下：1。高能离子束的产生从具有高等离子体电位的冷阴极辉光放电中将离子束提取到低压微波等离子体中。离子束的能量可以提高到600 eV，是以前的2-3倍。从微波等离子体中提取低能（4-40 eV）、大面积（直径16 cm）的电子束进入外偏置腔。通过调节偏置电压可以很容易地改变束流能量，而束流通量则受到微波等离子体中离子损失率的限制。氢自由基行为的研究从根本上研究了氢自由基对薄膜生长和性能的影响。获得了氢分子形成和氢吸收机理的新信息。

We have proposed a new plasma processing technique called "double plasma method", where two independent plasmas are joined to form ion beams or electron beams. Energy distribution functions of charged particles in a reactive plasma can be controlled in the double plasma device by abjusting the external bias voltage between the two plasmas.In this project, we constructed a double plasma device using an ECR microwave discharge and a cold cathode glow discharge. The experimental results are summarized as follows:1. Production of high-energy ion beams an ion beam was extracted into a low-pressure microwave plasma from a cold-cathode glow discharge having a high plasma potential. The energy of the ion beam could be increased up to a value (600 eV) 2-3 times higher than the previous one.2. Production of electron beams with low energy and large area A low-energy (4-40 eV), large-area (16 cm diam.) electron beam was extracted from the microwave plasma into an externally biased chamber. The beam energy could be varied easily by abjusting the bias voltage, while the beam flux turned out to be limited by the ion loss rate in the microwave plasma.3. Investigation of behaviors of hydrogen radical the behaviors of hydrogen radical governing the film growth and properties were fundamentally investigated. New informations on a hydrogen molecule formation and a hydrogen absorption mechanism were obtained.