Formation of Functional Thin Films by a Double Plasma Device
双等离子体装置形成功能薄膜
基本信息
- 批准号:62880003
- 负责人:
- 金额:$ 2.24万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Developmental Scientific Research
- 财政年份:1987
- 资助国家:日本
- 起止时间:1987 至 1988
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have proposed a new plasma processing technique called "double plasma method", where two independent plasmas are joined to form ion beams or electron beams. Energy distribution functions of charged particles in a reactive plasma can be controlled in the double plasma device by abjusting the external bias voltage between the two plasmas.In this project, we constructed a double plasma device using an ECR microwave discharge and a cold cathode glow discharge. The experimental results are summarized as follows:1. Production of high-energy ion beams an ion beam was extracted into a low-pressure microwave plasma from a cold-cathode glow discharge having a high plasma potential. The energy of the ion beam could be increased up to a value (600 eV) 2-3 times higher than the previous one.2. Production of electron beams with low energy and large area A low-energy (4-40 eV), large-area (16 cm diam.) electron beam was extracted from the microwave plasma into an externally biased chamber. The beam energy could be varied easily by abjusting the bias voltage, while the beam flux turned out to be limited by the ion loss rate in the microwave plasma.3. Investigation of behaviors of hydrogen radical the behaviors of hydrogen radical governing the film growth and properties were fundamentally investigated. New informations on a hydrogen molecule formation and a hydrogen absorption mechanism were obtained.
我们提出了一种新的等离子体处理技术,称为“双等离子体法”,即两个独立的等离子体连接在一起形成离子束或电子束。在双等离子体装置中,通过调节两个等离子体之间的外加偏置电压,可以控制反应等离子体中带电粒子的能量分布函数。实验结果总结如下:1.高能离子束的产生从具有高等离子体势的冷阴极辉光放电中将离子束引出到低压微波等离子体中。离子束的能量可以增加到比以前高2-3倍的值(600 EV)。低能大面积电子束的生产低能(4-40 eV)、大面积(16厘米直径)电子束从微波等离子体中被提取到一个外偏置的腔室中。通过调节偏置电压可以很容易地改变束流能量,而束流却受到微波等离子体中离子损失率的限制。氢自由基行为的研究从根本上研究了氢自由基对薄膜生长和性能的影响。获得了有关氢分子形成和吸氢机理的新信息。
项目成果
期刊论文数量(15)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H. Sugai; S. Urano; S. Ohshita; T. Okuda: "In-Situ Carbon Coating by Toroidal Discharges Using Methane, Acetylene, and Benzen" Proc. 8th Int. Simposium on Plasma Chemistry. 3. 1548-1553 (1987)
H.菅井;
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吉田慎司、大下晋、菅井秀郎、奥田孝美: 核融合研究. 58. 402-410 (1987)
Shinji Yoshida、Susumu Oshita、Hideo Sugai、Takami Okuda:核聚变研究 58. 402-410 (1987)。
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Yabuoshi;H.Toyoda;H.Sugai: Proc.of 6th Symposium on Plasma Processing(Kyoto,1989). 1. 593-596 (1989)
Yabuoshi;H.Toyoda;H.Sugai:第 6 届等离子体加工研讨会论文集(京都,1989 年)。
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H.Sugai;S.Urano;S.Ohshita;T.Okuda: Proc.of 8th Int.Symposium on Plasma Chemistry. 3. 1548-1553 (1987)
H.Sugai;S.Urano;S.Ohshita;T.Okuda:第八届国际等离子体化学研讨会论文集。
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- 影响因子:0
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H.Sugai;H.Toyoda;S.Ohshita;S.Yoshida;A.Sagara: J.Nucl.Mater.(1989)
H.菅井;H.丰田;S.Ohshita;S.吉田;A.相良:J.Nucl.Mater.(1989)
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SUGAI Hideo其他文献
SUGAI Hideo的其他文献
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{{ truncateString('SUGAI Hideo', 18)}}的其他基金
Development of Giant Plasma Processing Based on Large-Area Microwave Discharge
基于大面积微波放电的巨型等离子体处理研究进展
- 批准号:
15204053 - 财政年份:2003
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of Large-area High-quality LCD Processing by Surface Wave Plasma
表面波等离子体大面积高品质LCD加工的开发
- 批准号:
12358004 - 财政年份:2000
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Study on Surface Reaction Processes Using High Performance Beam Device
利用高性能束流装置进行表面反应过程的研究
- 批准号:
10308016 - 财政年份:1998
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of Selective Hydrogen Pumping Method Using Lithium Films
锂膜选择性抽氢方法的发展
- 批准号:
07558177 - 财政年份:1995
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Novel First-Wall Conditioning in Stationary Reactor Studies
固定反应堆研究中的新型第一壁调节
- 批准号:
06452419 - 财政年份:1994
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Optimization of Particle Control by Boronization
通过渗硼优化颗粒控制
- 批准号:
04452310 - 财政年份:1992
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development of large-diameter RF plasmas under surface magnetic field
表面磁场下大直径射频等离子体的研制
- 批准号:
04558002 - 财政年份:1992
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Development of Low-Energy Particle-Beam Sources for Super-fine Plasma Processing
用于超精细等离子体加工的低能粒子束源的开发
- 批准号:
01880002 - 财政年份:1989
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B).
Mode Conversion Phenomena of Electromagnetic Waves in a Magnetized Plasma
磁化等离子体中电磁波的模式转换现象
- 批准号:
61460227 - 财政年份:1986
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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