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Development of large-diameter RF plasmas under surface magnetic field

表面磁场下大直径射频等离子体的研制

基本信息

批准号：
04558002
负责人：
SUGAI Hideo
金额：
$ 6.02万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04558002/
关键词：
plasma process high density plasma inductively coupled plasma helicon plasma plasma etching surface magnetic field Faraday shield indium-tin-oxide film ヘリコン波プラズマ選択ドライエッチング ITO薄膜ファラデシールドラジカルアンテナ電磁界永久磁石誘導型RF 高周波プラズマ大

项目摘要

The research and development on plasma production, diagnostics and control have been extentsively performed in order to produce a high-density, large-diameter and low-pressure plasma for materials processing. The results obtained in this study are summarized below :1.High-Density Plasma ProductionA large-diameter high-density plasma at low pressures was generated by inserting an inductive RF antenna into a vacuum vessel which is covered with surface magnetic fields. Electrostatic coupling of the antenna from plasma was shown to be suppressed by a Faraday shield. On the other hand, mechanisms of RF power absorption in a helicon plasm were investigated. Under the conditions of low magnetic fields (<100 G) and low power (<1 kW) , the RF power turned out to be deposited into a plasma via antenna nearfields rather than helicon wave fields.2.Diagnosticcs, Control and Applications of High-Density PlasmasThe detaild dignostics showed that a high electron density considerably modifies the radical composition, thus degrading an etch selectivity. Two methods to solve this problem were developed : one is a vessel wall heating (100-200ﾟC) and the other is a pulsed discharge (duration -10mus) .In addition, we developed new techniques for measuring electron density by a plasma oscillation method, electron energy distribution functi on by a biased optical probe method, and SiH_3 radical and particulates by ultravioret absorption spectroscopy.

为了生产用于材料加工的高密度、大直径、低压等离子体，在等离子体生产、诊断和控制方面进行了广泛的研究和开发。本研究得到的结果总结如下：1。高密度等离子体的产生通过将感应射频天线插入覆盖有表面磁场的真空容器中，在低压下产生大直径高密度等离子体。天线与等离子体的静电耦合被法拉第屏蔽所抑制。另一方面，研究了螺旋质中射频功率吸收的机理。在低磁场（< 100g）和低功率（< 1kw）条件下，射频功率通过天线近场而不是螺旋波场沉积到等离子体中。高密度等离子体的诊断、控制和应用详细的诊断表明，高电子密度极大地改变了自由基的组成，从而降低了蚀刻的选择性。为了解决这一问题，研究人员开发了两种方法：一种是血管壁加热（100- 200cc），另一种是脉冲放电（持续时间-10mus）。此外，我们还开发了用等离子体振荡法测量电子密度、用偏压光学探针法测量电子能量分布函数、用紫外吸收光谱法测量SiH_3自由基和粒子的新技术。