课题基金 / 基金详情

Development of Giant Plasma Processing Based on Large-Area Microwave Discharge

Development of Giant Plasma Processing Based on Large-Area Microwave Discharge
基于大面积微波放电的巨型等离子体处理研究进展
批准号:
15204053
负责人:
SUGAI Hideo
金额:
$27.21万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005

项目摘要

项目成果

SUGAI Hideo的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
(1) Production of one-meter long high-density plasma at 2.45 GHzWe developed a new vacuum waveguide system in order to avoid huge atmospheric force acting on a dielectric plate, and also a multi-slot antenna system in order to make a plasma density uniform. As a result, a high-density plasma of one meter in length was produced uniformly. A sheet-like plasma of 2 cm in thickness and one meter in length was also produced. Moreover, The long high-density plasma was sustained in a wide range pf pressure from 1 Pa to atmospheric pressure.(2) Production of two-meter long high-density plasma at 915 MHzA large-area high-density plasma of two meter in length was successfully produced at 915 MHz discharge in collaboration with Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology. In addition, amorphous and micro-crystalline Si thin films of 2 m x 0.2 m in area were deposited using SiH_4 and H_2 discharge.(3) Large-area plasma produced by parallel wa … More veguide excitationIn order to make a plasma width wider, two sets of multi-slot antenna system were designed, developing a unique power divider for single microwave generator. In this way, a large plasma device of 1 m x 1 m in area was constructed at 915 MHz.(4) Plasma control for materials processingIn order to reduce high-energy electrons, the microwave discharge was pulsed and the time variation of optical emission intensity and plasma density were measured. On the other hand, a dielectric plate with holes is introduced where a local intense optical emission was observed in the hole with a decrease in high-energy electrons in the down stream plasma.(5) High speed deposition of Si films with oxidation and nitridation of Si at low temperaturesMicrowave high density plasmas enabled micro-crystalline Si film deposition at high rate (> 10 nm/s) and formation of poly-Si film of large grain size (〜600 nm). Furthermore, oxidation and nitridation of silicon surface at low temperatures were demonstrated. Less
期刊论文(76)
专著(0)
科研奖励(0)
会议论文
Investigation of Plasma Nitridation of Silicon (111) as a Mask Layer for GaN Selective Area Growth
硅 (111) 等离子体氮化作为 GaN 选择性区域生长掩模层的研究
DOI: --
发表时间: 2004
期刊: Abstracts of 7th Asia Pacific Conference on Plasma Science and Technology & 17th Symposium on Plasma Science for Materials
影响因子: --
作者: [T.Ishijima, S.Frederico, Y.Honda, H.Sugai]
通讯作者: H.Sugai
K.Nakamura, M.Ohata, H.Sugai: "Highly-Sensitive Plasma Absorption Probe for Measuring Low-Density High-Pressure Plasmas"Journal of Vacuum Science and Technology. A21・1. 325-331 (2003)
K.Nakamura、M.Ohata、H.Sugai:“用于测量低密度高压等离子体的高灵敏度等离子体吸收探针”真空科学技术杂志 A21・1(2003 年)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Suppression and Oxygen Impurity Incorporationinto Silicon Films Prepared from Surface-Wave Excited H_2/SiH_4 Plasma
表面波激发H_2/SiH_4等离子体制备硅薄膜的抑制和氧杂质掺入
DOI: --
发表时间: 2004
期刊: Japanese Journal of Applied Physics Vol.43, No.11A
影响因子: --
作者: [S.Somiya, H.Toyoda, Y.Hotta, H.Sugai]
通讯作者: H.Sugai
Giant Plasma Production for Meter-scale Materials Processing
用于米级材料加工的巨型等离子体生产
DOI: --
发表时间: 2004
期刊: Abstracts of 15th Symposium of Materials Research Society of Japan
影响因子: --
作者: [H.Sugai, Y.Nojiri, K.Takasu, T.Ishijia]
通讯作者: T.Ishijia
32
    Development of Large-area High-quality LCD Processing by Surface Wave Plasma
    • 批准号:
      12358004
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $15.39万
    • 财政年份:
      2000
    • 负责人:
      SUGAI Hideo
    • 依托单位:
    Study on Surface Reaction Processes Using High Performance Beam Device
    • 批准号:
      10308016
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $24.62万
    • 财政年份:
      1998
    • 负责人:
      SUGAI Hideo
    • 依托单位:
    Development of Selective Hydrogen Pumping Method Using Lithium Films
    • 批准号:
      07558177
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $7.04万
    • 财政年份:
      1995
    • 负责人:
      SUGAI Hideo
    • 依托单位:
    Novel First-Wall Conditioning in Stationary Reactor Studies
    • 批准号:
      06452419
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $4.29万
    • 财政年份:
      1994
    • 负责人:
      SUGAI Hideo
    • 依托单位:
    海外基金