Study on Surface Reaction Processes Using High Performance Beam Device

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To investigate surface reaction processes in plasma processing (etching, CVD) for semiconductor manufacturing, highly controlled beam experiment has been carried out A few kinds of reactive ionic species important for processing are irradiated to a substrate with controlled energy and flux, and various kinds of surface-desorbed ionic and neutral radicals are detected by highly sensitive quadrupole mass spectrometer. At the same time, beam-irradiated surface is analyzed by in-situ XPS, Our purpose is to understand reaction process occurring on the surface based on these measurements.The project is carried out focused on the following points.( 1 ) Improvement of the experimental setupThe experimental setup is improved : detection sensitivity of neutral radicals are increased and in-situ XPS device is installed to the apparatus.( 2 ) Study on reactions of fluorocarbon ion beam on silicon surfaceCF_3^+ and CF_2^+ ion beam are irradiated on silicon surface, where surface-produced species such as SiF_2, SiF_4 and CF_x neutral radicals are successfully detected. Furthermore, surface state is monitored by in-situ XPS.( 3 ) Study on reactions of fluorocarbon ion beam on silicon dioxide surfaceCF_3^+ and CF_2^+ ion beam are irradiated on silicon dioxide surface, where surface-produced species and surface state are monitored by quadrupole mass spectrometer and in-situ XPS. Furthermore, the correlation of etching rate with species desorbed from the surface is investigated.( 4 ) Study on fluorine ion beam with siliconFluorine ions which are believed to be one of important species for etching are irradiated on silicon surface, while surface-produced species are monitored.