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Study on Surface Reaction Processes Using High Performance Beam Device

利用高性能束流装置进行表面反应过程的研究

基本信息

批准号：
10308016
负责人：
SUGAI Hideo
金额：
$ 24.62万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10308016/
关键词：
plaasma processing etching CVD surface reaction neutral radical ion beam silicon XPS プロズマプロセス

项目摘要

To investigate surface reaction processes in plasma processing (etching, CVD) for semiconductor manufacturing, highly controlled beam experiment has been carried out A few kinds of reactive ionic species important for processing are irradiated to a substrate with controlled energy and flux, and various kinds of surface-desorbed ionic and neutral radicals are detected by highly sensitive quadrupole mass spectrometer. At the same time, beam-irradiated surface is analyzed by in-situ XPS, Our purpose is to understand reaction process occurring on the surface based on these measurements.The project is carried out focused on the following points.( 1 ) Improvement of the experimental setupThe experimental setup is improved : detection sensitivity of neutral radicals are increased and in-situ XPS device is installed to the apparatus.( 2 ) Study on reactions of fluorocarbon ion beam on silicon surfaceCF_3^+ and CF_2^+ ion beam are irradiated on silicon surface, where surface-produced species such as SiF_2, SiF_4 and CF_x neutral radicals are successfully detected. Furthermore, surface state is monitored by in-situ XPS.( 3 ) Study on reactions of fluorocarbon ion beam on silicon dioxide surfaceCF_3^+ and CF_2^+ ion beam are irradiated on silicon dioxide surface, where surface-produced species and surface state are monitored by quadrupole mass spectrometer and in-situ XPS. Furthermore, the correlation of etching rate with species desorbed from the surface is investigated.( 4 ) Study on fluorine ion beam with siliconFluorine ions which are believed to be one of important species for etching are irradiated on silicon surface, while surface-produced species are monitored.

为了研究半导体制造等离子体加工（蚀刻、CVD）过程中的表面反应过程，进行了高控制光束实验。在控制能量和通量的情况下，将几种对加工重要的反应离子照射到衬底上，并用高灵敏度四极杆质谱仪检测各种表面脱附的离子和中性自由基。同时，用原位XPS对辐照表面进行了分析，目的是通过这些测量来了解表面发生的反应过程。本项目主要从以下几个方面展开。(1)实验装置的改进：改进了实验装置，提高了中性自由基的检测灵敏度，并在仪器上安装了原位XPS装置。(2)氟碳离子束在硅表面的反应研究：在硅表面辐照f_3 ^+和CF_2^+离子束，成功检测到表面生成的SiF_2、SiF_4和CF_x中性自由基。此外，利用原位XPS监测了表面状态。(3)氟碳离子束在二氧化硅表面的反应研究：采用四极杆质谱仪和原位XPS技术，在二氧化硅表面辐照f_3 ^+和CF_2^+离子束，监测表面生成物质和表面状态。此外，还研究了蚀刻速率与表面解吸物质的关系。(4)硅氟离子束的研究氟离子被认为是蚀刻的重要种类之一，在硅表面辐照，同时对表面产生的种类进行监测。