Heteroepitaxial Growth of GaN on Diamond Substrates with High Thermal Conductivity

高导热金刚石衬底上异质外延生长 GaN

• 批准号: 414001775
• 负责人: Dr. Alexander Hinz
• 金额: --
• 依托单位: Institut für Festkörperelektronik (IFE)
• 依托单位国家: 德国
• 项目类别: Research Fellowships
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/414001775?language=en
• 关键词: Heteroepitaxial; Growth; GaN; Diamond; Substrates

Since breakthroughs in the growth of single crystal GaN films in the 1980s, the direct bandgap semiconductor GaN has become one of the most important semiconductors for industrial applications. Without it, the development of the nowadays ubiquitous light-emitting diode would have been unfeasible. But GaN is not only interesting for the application in light emitting diodes but also in power electronic devices, especially for devices with high operating frequency. However, at high power densities these devices are reaching certain limitations. The insufficient heat transport form the active device region limits their maximum power density. To increase the power density or the reliability of these devices it would be favourable to improve the heat transport. The aim of this project is to achieve this by directly growing GaN onto diamond substrates. In the first part of the project GaN films will be grown on single crystal diamond substrates to determine the optimum growth conditions. As even synthetic diamond single crystals are expensive, and thus only of interest for specific applications, the second and most important part of the project aims at growing single crystal GaN films on polycrystalline diamond films. Achieving this goal will require to influence the nucleation of the GaN in such a way that GaN nuclei only form on diamond crystallites with the same orientation by pretreating the diamond films and choosing appropriate growth conditions. Subsequently the GaN nuclei will coalesce into a closed single crystal film. In the third, and last, part of the project the scalability of the developed process will be demonstrated. The process will be transferred to 6” or 8” Si-wafers that are coated with polycrystalline diamond films.

由于1980年代单晶胶质膜的生长突破，直接带隙半导体GAN已成为工业应用中最重要的半导体之一。没有它，如今无处不在的发光二极管的发展将是不可行的。但是，对于在发射二极管中的应用中，甘恩不仅有趣，而且在电源电子设备中，尤其是在运行频率高的设备中。但是，在高功率密度下，这些设备正在达到一定的局限性。热传输不足形成了主动装置区域限制其最大功率密度。为了提高功率密度或这些设备的可靠性，改善热传输将是有利的。该项目的目的是通过将GAN直接生长到钻石底物上来实现这一目标。在项目的第一部分中，胶片将在单晶钻石底物上生长，以确定最佳生长条件。由于即使是合成的钻石单晶也很昂贵，因此仅对特定应用感兴趣，该项目的第二个也是最重要的部分旨在在多晶钻石膜上生长单晶gan膜。实现这一目标将需要以这种方式影响GAN的成核，以使GAN核仅在钻石晶体上形成具有相同方向的钻石核形成，并选择钻石膜并选择适当的生长条件。随后，gan核将聚集成封闭的单晶膜。在项目的第三个也是最后一部分中，将证明开发过程的可伸缩性。该过程将转移到涂有多晶钻石膜的6英寸或8英寸Si-Wafers。