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STUDY OF INITIAL STAGE OF SILICIDE FORMATION ON HYDROGEN-TERMINATED SILICON SURFACES

氢封端硅表面硅化物形成初始阶段的研究

基本信息

批准号：
04452093
负责人：
UEDA Kazuyuki
金额：
$ 4.1万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

项目摘要

A purpose of the present investigation was a study of initial formation mechanism of silicide on hydrogen-terminated silicon surfaces. Firstly we investigated adsorption and desorption characteristics of atomic hydrogen on clean silicons surface by using a tim-of-flight type electron stimulated desorption spectroscopy (TOF-ESD). It is believed that the terminated silicon surface by atomic hydrogen is very stable and has a surfactant effect during atomic layr epitaxy. Both of silicon surfaces of (111) and (100) planes were terminated by atomic hydrogen which generated by thermal cracking in hydrogen atomosphere of 2000 Langmuirs. The TOF-ESD which has been developed in our institute was used in-situ in order to detect the adsorbed hydrogen on silicon surfaces. Adsorption characteristtics of atomic hydrogen on clean silicon surfaces have been investigated by measuring the threshould electron energy for proton desorption, kinetic energy distribution of the desorbed protons and desorption yields for various hydrogen exposures. As a result a desorption mechnism of the proton at the first onset is due to Menzai-Gomer-Redhead model. Beside, adsorptions of hydrogen and CO on nickel surfaces were also investigeted by TOF-ESD in order to compare the nickel silicide surface.Epitaxial growth of nickel on silicon surface had different growth modes between hydrogen terminated surfaces and non-terminated surface. Namely, deposited nickel atoms on Si(100) terminated by hydrogen was diffused more quickly into the bulk than unterminated Si(100) by heating. A Ni/H/Si(100)-tereminated which was nickel rich than the unterminated one, and hydrogen was hydrogen was adsorbed less on this surface than untermianted surface.

本研究的目的是研究硅化物在端氢硅表面的初始形成机制。首先，利用飞行时间型电子激发解吸光谱（TOF-ESD）研究了原子氢在清洁硅表面的吸附和解吸特性。认为在原子层外延过程中，原子氢端接的硅表面非常稳定，具有表面活性剂的作用。（111）和（100）平面的硅表面均被2000 langmuir氢大气中热裂解产生的原子氢终止。利用本研究所研制的TOF-ESD对硅表面吸附的氢进行原位检测。通过测量质子解吸的三应电子能、解吸质子的动能分布和不同氢暴露条件下的解吸产率，研究了原子氢在清洁硅表面的吸附特性。根据Menzai-Gomer-Redhead模型，给出了质子的初始解吸机理。此外，利用TOF-ESD研究了氢和CO在镍表面的吸附情况，并对硅化镍表面进行了比较。镍在硅表面的外延生长在端氢表面和非端氢表面具有不同的生长模式。也就是说，沉积在氢端接的Si（100）上的镍原子通过加热比未端接的Si（100）更快地扩散到体中。末端的Ni/H/Si（100）比末端的Ni/H/Si（100）更富镍，而末端的Ni/H/Si（100）比末端的Ni/H/Si（100）更少吸附氢。