RESEARCH ON NEW QUANTUM FUNCTIONAL MATERIALS BY SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES

半导体/绝缘体/金属混合结构新型量子功能材料研究

• 批准号: 04452174
• 负责人: TAKEDA Yoshikazu
• 金额: $ 4.1万
• 依托单位: NAGOYA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452174/
• 关键词: SENICONDUCTORS; INSULATORS; METALS; HYBRID STRUCTURES; QUANTUM FUNCTIONS; OMVPE; FLUORESCENCE EXAFS; INITIAL GROWTH PROCESS

To realize such a hybrid structure as smiconductor/insulator/metal for a new quantum functional materials, conventional growth techniques are of no use. The hetero-interface must be controlled to one monolayr accuracy. We have developed a new reactor structure in OMVPE system with 4 barrells where intermixing of source gases are avoided and different gases are introduced to each barrell. Substrate travels rotationally or in a back-and forth mode. To test the basic capability of the new growth system, InP,GaAs, GaP,InGaAs and AlGap were grown and a high quality of each epitaxial layr was confirmed. Strained-layr superlattices of InP/InAs/InP where different group-V source gases are required to change without intermixing with each other were successfully grown.Fluorescence-detected EXAFS for one monolayr, or less, of InAs in InP were successfully conducted with multiple SSDs and highly focused SOR X-rays, and local structures around As atoms in InP were revealed. The lattice relaxation processes were simulated by Valence-Force Field model and a very slow process was clarified.X-ray CTR scattering technique was successfully applied to one momolyer or 1/10 of momolayr of InAs in InP and the profiles of As distributions in InP were clearly revealed to an atomic level accuracy. Exchange processes of the group-V stoms at the hetero-interfaces were investigated by this technique.

为了实现半导体/绝缘体/金属的混合结构作为一种新的量子功能材料，传统的生长技术是没有用的。异质界面必须控制在单层精度。在OMVPE系统中，我们开发了一种新的反应器结构，它具有4个桶，其中避免了源气体的混合，并且将不同的气体引入到每个桶中。基板旋转或以前后模式移动。为了测试新生长系统的基本性能，生长了InP、GaAs、GaP、InGaAs和AlGap，并且确认了每个外延层的高质量。成功地生长了InP/InAs/InP应变层超晶格，其中不同的V族源气体需要改变而不相互混合，成功地用多个SSD和高聚焦的SOR X射线对InP中单层或更少的InAs进行了EXAFS探测，揭示了InP中As原子周围的局域结构。用价力场模型模拟了InP中As的晶格弛豫过程，阐明了一个非常缓慢的弛豫过程，并成功地将X射线CTR散射技术应用于1个或1/10个InAs的单层InP中，得到了原子级精度的As分布轮廓。利用该技术研究了异质界面上V族stom的交换过程。

项目成果

M.Tabuchi, Y.Takeda et al.: "Distribution of As atoms in InP/InPAs (1ML) /InP hetero-structures measured by X-ray CTR scattering" Proc.7th Inter.Conf.InP and Related Materials. (in press). (1995)

M.Tabuchi、Y.Takeda 等人：“通过 X 射线 CTR 散射测量的 InP/InPAs (1ML) /InP 异质结构中 As 原子的分布”Proc.7th Inter.Conf.InP 和相关材料。

Y.Takeda: "Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by MOVPE with TMIn and TBP" J.Crystal Growth. 146. 544-548 (1995)

Y.Takeda：“氢气流量对采用 TMIn 和 TBP 的 MOVPE 生长的 InP 的生长特性和电/光学特性的巨大影响”J.Crystal Growth。

Y.Takeda: "OMVPE-growth of III-V compounds and alloys using low-toxic group-V sources" Processing Materials for Properties. 1. 133-136 (1993)

Y.Takeda：“OMVPE-使用低毒 V 族源生长 III-V 化合物和合金”加工材料的性能。

M.Tabuchi,Y.Takeda et al.: "Distribution of As atoms in InP/InPAs(1ML)/InP hetero-structures measured by X-ray CTR scattering" Proc.7th Inter.Conf.InP and Related Materials. (in press). (1995)

M.Tabuchi、Y.Takeda 等人：“通过 X 射线 CTR 散射测量的 InP/InPAs(1ML)/InP 异质结构中 As 原子的分布”Proc.7th Inter.Conf.InP 和相关材料。

M.Tabuchi: "EXAFS-observation of lattice accomodation in heteroepitaxial semiconductor layers grown beyond critical thickness" The 3rd IUMRS Inter.Conf.Advenced Materials. (in press). (1994)

M.Tabuchi：“EXAFS - 生长超过临界厚度的异质外延半导体层中晶格调节的观察”第三届 IUMRS Inter.Conf.Advenced Materials。