Improvement of quantum efficiency of super-high brightness and high spin-polarization photocathodes

超高亮度高自旋偏振光电阴极量子效率的提高

• 批准号: 23246003
• 负责人: TAKEDA Yoshikazu
• 金额: $ 23.8万
• 依托单位: Nagoya Industrial Science Research Institute (2012-2013)Nagoya University (2011)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-23246003/
• 关键词: 結晶成長; スピントロニクス; 表面・界面物性; 量子エレクトロニクス; 量子ビーム

Using the high precision ultrasonic mass flow controller, the strain-compensated superlattice was grown up to 90-pair (using previous controller 12-pair was a limit.) . Then, the originally planned technique, i.e., the adhesion process onto a transparent substrate, was not necessary and the adhesion process was not tried. In addition to it, lattice-matching and transparent substrate, ZnSe, was available and the growth of GaAs on ZnSe was successfully conducted. This also shows that the adhesion process was not necessary. Due to the stability of the appropriate excitation energy, use of semiconductor laser became possible. The excitation wavelength at the peak polarization located at the flat region (770~780nm) of the density-of states and then the quantum efficiency increased by 4 times.

使用高精度超声质量流量控制器，应变补偿超晶格生长到90对（使用以前的控制器12对是极限）。. 然后，最初计划的技术，即，在透明衬底上的粘合过程不是必需的，并且没有尝试粘合过程。 此外，还获得了晶格匹配的透明衬底ZnSe，并成功地在ZnSe上生长了GaAs。 这也表明粘合过程是不必要的。 由于适当的激发能量的稳定性，半导体激光器的使用成为可能。 峰值偏振激发波长位于态密度平坦区（770~ 780 nm），量子效率提高了4倍。

项目成果

Development of novel compact spin-polarized electron gun

新型紧凑型自旋极化电子枪的研制

• 发表时间: 2012
• 作者: Takanori Koshikawwa;Xiuguang Jin;Yoshikazu Takeda他
• 通讯作者: Yoshikazu Takeda他

Effect of inhomogeneous strain distribution on the thickness modulation in GaAs/GaAsP strained superlattice

不均匀应变分布对GaAs/GaAsP应变超晶格厚度调制的影响

• 发表时间: 2011
• 作者: X.G.Jin;T.Ujihara;Y.Takeda;他
• 通讯作者: 他

In situ X-ray reflectivity of indium supplied on GaN templates by metalorganic vapor phase epitaxy

通过金属有机气相外延在 GaN 模板上提供的铟的原位 X 射线反射率

• 发表时间: 2013
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: G.X. Ju;S. Fuchi;M. Tabuchi;and Y. Takeda
• 通讯作者: and Y. Takeda

Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation

• DOI: 10.1016/j.jcrysgro.2012.05.017
• 发表时间: 2012-08
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: X. Jin;H. Nakahara;K. Saitoh;T. Saka;T. Ujihara;N. Tanaka;Y. Takeda

AlGaAs中間層及びSi_3N_4反射防止膜の導入による透過型GaAs/GaAsP歪み超子スピン偏極フォトカソードの量子効率向上

引入AlGaAs中间层和Si_3N_4减反射膜提高透射型GaAs/GaAsP应变超自旋极化光电阴极的量子效率

• 发表时间: 2011
• 作者: 金;竹田;他
• 通讯作者: 他