Research on New Properties by Binary/Binary Superlattices

二元/二元超晶格新性质研究

基本信息

  • 批准号:
    60550232
  • 负责人:
  • 金额:
    $ 1.28万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1985
  • 资助国家:
    日本
  • 起止时间:
    1985 至 1986
  • 项目状态:
    已结题

项目摘要

In the present stutdy, crystal structures and new physical phenomena. of binary/binary superlattices based on new physical concept were investigated, taking AIAs/GaAs, InAs/GaAs and GaSb/GaAs superlatices. Three superlattices, at their average compositions, lattice-match to binary compund substrates: GaAs and InP. However, the miscibility of their random alloys is significantly different. In InAs/GaAs superlattices, the analysis of the average and microscopic crystal structures and theoretical calculations of electronic properties are presented.1. Superlattices of m-layer InAs and n-layer GaAs were grown by MBE. The comnination of m and n were (m,n)=(6.45,0.51), (8.8,1.3),and (2.2,1,2).2. From the x-ray reflections by (004) and (115) planes it was confirmed that the average crystal structure is cubic.3. EXAFS measurement was etablished for the Ga- and As-absorption edge of InGaAsP alloys and InAs/GaAs superlattices.4. The analysis of EXAFS revealed that in the superlattice of (m,n)=(6.45,0.51) the Ga-As bond length was 2.51 A being longer than that in GaAs by 2.4%. It is even longer than 2.485 A in In0.93Ga0.07As. The results indicate the bond. relaxation is greatly different in random alloys and superlattices.5. Theoretical study of energy state, wave-function, scattering mechanisms, and electron mobility for two-dimensional electrons shows that the alloy scattering which is predominant in random alloy is eliminated to give the electron mobility higher than that in AIGaAs/GaAs single heterostructure by the factor of 5.
在本研究中,晶体结构和新的物理现象。以AlAs/GaAs、InAs/GaAs和GaSb/GaAs超晶格为例,研究了基于新物理概念的二元/二元超晶格的结构和性质。三个超晶格,在其平均组成,晶格匹配的二元化合物衬底:GaAs和InP。然而,它们的随机合金的可结晶性是显著不同的。在InAs/GaAs超晶格中,对平均和微观晶体结构进行了分析,并对电子性质进行了理论计算.用分子束外延法生长了m层InAs和n层GaAs超晶格。m和n的组合分别为(m,n)=(6.45,0.51),(8.8,1.3)和(2.2,1,2)。由(004)和(115)面的X射线反射确认平均晶体结构为1.3。对InGaAsP合金和InAs/GaAs超晶格的Ga和As吸收边进行了EXAFS测量. EXAFS分析表明,在(m,n)=(6.45,0.51)的超晶格中,Ga-As键长为2.51,比GaAs长2.4%。In_(0.93)Ga_(0.07)As中的2.485 A更长。结果表明债券。弛豫在无规合金和超晶格中有很大不同.对二维电子的能态、波函数、散射机制和电子迁移率的理论研究表明,在无规合金中占主导地位的合金散射被消除,电子迁移率比AlGaAs/GaAs单异质结构高5倍。

项目成果

期刊论文数量(9)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Oyanagi,Hiroyuki: "Structural characterization of LPE-grown InGaAsP alloys on InP by fluorescence-detected x-ray absorption spectroscopy" Institute of Phyics Conference Series. 79. 295-300 (1986)
Oyanagi、Hiroyuki:“通过荧光检测 X 射线吸收光谱对 InP 上 LPE 生长的 InGaAsP 合金进行结构表征”物理研究所会议系列。
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  • 影响因子:
    0
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  • 通讯作者:
Takeda,Yoshikazu: "Calculated electron mobility of two-dimensional electrons in AlInAs/ InGaAs and Inp/InGaAs single heterostructures" Japanese Journal of Applied Physics. 24. 1307-1311 (1985)
Takeda,Yoshikazu:“AlInAs/InGaAs 和 Inp/InGaAs 单异质结构中二维电子的计算电子迁移率”日本应用物理学杂志。
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    0
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  • 通讯作者:
大柳 宏之: Institute of Physics Sonference Series. 79. 295-300 (1986)
Hiroyuki Oyanagi:物理研究所 Sonference 系列。79. 295-300 (1986)
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    0
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大柳 宏之: J.Superlattices and Microstructures. (1988)
Hiroyuki Oyanagi:J.超晶格和微观结构(1988)。
  • DOI:
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  • 影响因子:
    0
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  • 通讯作者:
Oyanagi,Hiroyuki: "Structural studies of (Ga,In)(As,P) alloys and (InAs)_m(GaAs)_n strained-layer superlattices by fluorescence-detected EXAFS" Journal of Superlattices and Microstructures. (1988)
Oyanagi、Hiroyuki:“通过荧光检测 EXAFS 对 (Ga,In)(As,P) 合金和 (InAs)_m(GaAs)_n 应变层超晶格进行结构研究”《超晶格与微结构杂志》。
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TAKEDA Yoshikazu其他文献

TAKEDA Yoshikazu的其他文献

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{{ truncateString('TAKEDA Yoshikazu', 18)}}的其他基金

Improvement of quantum efficiency of super-high brightness and high spin-polarization photocathodes
超高亮度高自旋偏振光电阴极量子效率的提高
  • 批准号:
    23246003
  • 财政年份:
    2011
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Intrinsic Hetero-interface Structures and Their Formation
本征异质界面结构及其形成
  • 批准号:
    18106001
  • 财政年份:
    2006
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (S)
Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and O
利用 Er 和 O 超高共掺杂制造半导体光放大器
  • 批准号:
    13305022
  • 财政年份:
    2001
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
CRYSTAL STRUCTURE ANALYSIS OF SURFACE AND INTERFACE 1 ATOMIC LAYER AND CONTROL OF HETEROSTRUCTURE GROWTH
表面和界面1原子层的晶体结构分析及异质结构生长的控制
  • 批准号:
    09305003
  • 财政年份:
    1997
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
RESEARCH ON ATOMIC LAYER CONTROLLED GROWTH AND CHARACTERIZATION OF SEMICONDUCTOR QUANTUM STRUCTURES WITH DIFFERENT GROUP-V ATOMS
不同V族原子半导体量子结构的原子层控制生长及表征研究
  • 批准号:
    07455007
  • 财政年份:
    1995
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
DEVELOPMENT OF FABRICATION SYSTEM FOR NEW QUANTUM FUNCTIONAL MATERIALS OF SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES
半导体/绝缘体/金属混合结构新型量子功能材料制造系统开发
  • 批准号:
    07555100
  • 财政年份:
    1995
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
RESEARCH ON NEW QUANTUM FUNCTIONAL MATERIALS BY SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES
半导体/绝缘体/金属混合结构新型量子功能材料研究
  • 批准号:
    04452174
  • 财政年份:
    1992
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

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