CRYSTAL STRUCTURE ANALYSIS OF SURFACE AND INTERFACE 1 ATOMIC LAYER AND CONTROL OF HETEROSTRUCTURE GROWTH

本研究的目标是建立一种技术来衡量和分析半导体原位表面和接口单体的晶体结构，并控制异质结构的增长，不仅仅是半导体/半导体异构结构，但也是其他组合，如半导体/绝缘子和半导体/半导体异构结构。InP异质结构是完全成功的，ErP的晶体结构是通过CTR散射测量提供的，以成为rocksalt结构。它还发现了半导体对量子尺寸的影响的半导体的半导体变化，通过X射线CTR散射测量、组合物、InP/InGaAs （2-3单体） /InP异构结构进行了测量并揭示到一个原子层级别的一个原子层（1单体）上的一个原子层的观测，通过GaAs成功地由X射线CTR散射制造。用接口结构分析在一起。 ... More InP/InGaAs/InP和对AlAs表面1单体的观测，原始目标在本研究中得到了证实。X射线CTR散射测量技术具有非常强大的能力，以揭示异质结构中1个原子层的晶体结构已应用于低温度缓冲层在蓝宝石基底上生长GaN。通过X射线CTR散射测量、X射线反射率测量和AFM表面观测揭示了低温AlN和GaN缓冲层的生长过程和生长时间依赖性。低温度缓冲层的作用和缓冲层的最佳晶体是在原子尺度上分类的缓冲层。通过表征技术的建立和这些异质结构的分析， a completely新的异质结构，一个完整的新异质结构，一个，CaFイD22イエD2/InAs/CaFイD22イエD2， were proposed and started to fabricate by a newly designed molecular beam epitaxy。Less（低）

The targets of this research are to establish a technique to measure and analyze the crystal structures of surface and interface monolayer in semiconductor in situ, and to control the heterostructure growth, not only semiconductor/semiconductor heterostructures but also other combinations such as semiconductor/insulator and semiconductor/semimetal heterostructures.InP/ErP/InP heterostructures were successfully fabricated and the crystal structure of ErP was proved to be the rocksalt structure by CTR scattering measurement. It was also found the semimetal changes to semiconductor due to the quantum size effects.By the X-ray CTR scattering measurements, the compositions, the layer thicknesses and the interface structures of InP/InGaAs (2-3 monolayer) /InP heterostructures were measured and revealed to the one atomic layer level.The observation of one atomic layer of AlAs (1 monolayer) on GaAs was successfully made by X-ray CTR scattering. Together with the interface structure analysis in … More InP/InGaAs/InP and the observation of surface 1 monolayer of AlAs, the original targets were achieved in this research.The X-ray CTR scattering measurement technique that has demonstrated its very powerful capability to reveal the crystal structures of 1 atomic layer in heterostructures was applied to the low-temperature buffer layers for growth of GaN on sapphire substrates. The growth process and growth timing dependences of the crystalline structures of the low-temperature AlN and GaN buffer layers were revealed by the X-ray CTR scattering measurements, X-ray reflectivity measurements and AFM surface observations. The role of the low-temperature buffer layers and the best crystallinity as the buffer layers were clarified in the atomic scale.Through the establishments of the characterization techniques and the analysis of these heterostructures, a completely new heterostructure, i.e., CaFィイD22ィエD2/InAs/CaFィイD22ィエD2, were proposed and started to fabricate by a newly designed molecular beam epitaxy. Less