RESEARCH ON ATOMIC LAYER CONTROLLED GROWTH AND CHARACTERIZATION OF SEMICONDUCTOR QUANTUM STRUCTURES WITH DIFFERENT GROUP-V ATOMS

本研究的目标分为两个主要目标：一是在不同的生长条件下生长不同V族原子的超薄异质层(特别是InAs/InP和InGaAs/InP)；二是用荧光EXAFS和X射线CTR散射表征这些异质层和界面。最后将这两个目标结合起来，控制异质结生长到一个原子层。同时，我们成功地在InP(001)表面生长了InAs量子点。生长(A)InGaAs/InP异质结：揭示了获得最尖锐异质界面的最佳生长条件。(B)Ep/InP异质结：成功地生长了有望表现出新效应的半导体/半金属异质结。(C)InAs量子点：通过液滴异质外延在InP(001)表面上成功地生长了InAs量子点。1异质界面的原子层表征(A)荧光EXAFS：在1个原子层或10^lt；18；cm；(B)X射线CTR散射：在原子尺度上确定了薄膜的厚度、成分和晶体结构。异质结构的光学表征(A)光反射：FFT光反射光谱清楚地揭示了Ep/InP异质结构中的能量结构和电场。

The turgets of this research are divided into two major objectives ; one is to grow ultrathin heterolayrs with different group-V atoms (specifically, InAs/InP and InGaAs/InP) under a variety of growth conditions, and the other is to characterize these heterolayrs and interfaces by fluorescence EXAFS and X-ray CTR scattering. The two objectives are finally combined to control the heterostructure growth to one atomic layr. In the mean time we succeeded to grow InAs quantum dots on InP (001) surface which was desired but had been unsuccessful.Growth(a) InGaAs/InP Heterostructures : The optimum growth conditions which give the sharpest heterointerface was revealed.(b) ErP/InP Heterostructures : Semiconductor/semimetal heterostructures which are expected to exhibit new effects were successfully grown.(c) InAs Quantum Dots : By droplet heteroepitaxy InAs quantum dots were successfully grown on InP (001) surface.1 atomic layr characterization of heterointerfaces(a) Fluorescence EXAFS : Local structures around very dilute atoms in 1 atomic layr or of 10^<18>cm^<-3> were clearly revealed.(b) X-Ray CTR Scattering : Film thickness, composition and crystal structure were determined in the atomic scale.Optical Characterization of Heterostructures(a) Photoreflectance : The energy structures and electric fields in the ErP/InP heterostructures were clearly revealed by FFT Phtoreflectance.