RESEARCH ON ATOMIC LAYER CONTROLLED GROWTH AND CHARACTERIZATION OF SEMICONDUCTOR QUANTUM STRUCTURES WITH DIFFERENT GROUP-V ATOMS

不同V族原子半导体量子结构的原子层控制生长及表征研究

• 批准号: 07455007
• 负责人: TAKEDA Yoshikazu
• 金额: $ 5.38万
• 依托单位: NAGOYA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455007/
• 关键词: SEMICONDUCTORS; ATOMIC LAYER; QUANTUM STRUCTURES; HETEROSTRUCTURE; EXAFS; X-RAY CTR; PHOTOREFLECTANCE; GROWTH CONDITIONS

The turgets of this research are divided into two major objectives ; one is to grow ultrathin heterolayrs with different group-V atoms (specifically, InAs/InP and InGaAs/InP) under a variety of growth conditions, and the other is to characterize these heterolayrs and interfaces by fluorescence EXAFS and X-ray CTR scattering. The two objectives are finally combined to control the heterostructure growth to one atomic layr. In the mean time we succeeded to grow InAs quantum dots on InP (001) surface which was desired but had been unsuccessful.Growth(a) InGaAs/InP Heterostructures : The optimum growth conditions which give the sharpest heterointerface was revealed.(b) ErP/InP Heterostructures : Semiconductor/semimetal heterostructures which are expected to exhibit new effects were successfully grown.(c) InAs Quantum Dots : By droplet heteroepitaxy InAs quantum dots were successfully grown on InP (001) surface.1 atomic layr characterization of heterointerfaces(a) Fluorescence EXAFS : Local structures around very dilute atoms in 1 atomic layr or of 10^<18>cm^<-3> were clearly revealed.(b) X-Ray CTR Scattering : Film thickness, composition and crystal structure were determined in the atomic scale.Optical Characterization of Heterostructures(a) Photoreflectance : The energy structures and electric fields in the ErP/InP heterostructures were clearly revealed by FFT Phtoreflectance.

本研究的目标分为两个主要目标：一是在不同的生长条件下生长具有不同V族原子的InAs/InP和InGaAs/InP异质层，二是通过荧光EXAFS和X射线CTR散射表征这些异质层和界面。最后将这两个目标结合起来，控制异质结生长到一个原子层。同时，我们成功地在InP（001）表面上生长了InAs量子点，这是我们所希望的，但一直没有成功。（a）InGaAs/InP异质结构的生长：揭示了产生最尖锐异质界面的最佳生长条件。(b)ErP/InP异质结构：成功生长了有望展现新效应的半导体/半金属异质结构。(c)InAs量子点：通过液滴异质外延在InP（001）表面成功地生长了InAs量子点。异质界面的单原子层表征（a）荧光EXAFS：在单原子层或10 μ cm ~ 2的非常稀的原子周围的局部结构<18><-3>被清楚地揭示。(b)X射线CTR散射：异质结构的光学特性研究（a）光反射谱：利用傅立叶变换（FFT）光反射谱，可以清晰地观察到ErP/InP异质结构的能量结构和电场分布。

项目成果

竹田、田淵他: "Erをδド-ピングしたInPのX線CTR散乱法による界面構造解析" 電子情報通信学会技報. ED95-118. 13-18 (1995)

Takeda, Tabuchi 等人：“通过 X 射线 CTR 散射法分析掺铒 InP 的界面结构”IEICE 技术报告 13-18 (1995)。

藤原,竹田 他: "液滴ヘテロエピタキシ-によるInP(001)上へのInAs島形成" 電子情報通信学会技報. ED96-103. 33-38 (1996)

Fujiwara、Takeda 等人：“通过液滴异质外延在 InP(001) 上形成 InAs 岛”IEICE 技术报告 ED96-103 (1996)。

田渕,竹田 他: "実験室系のX線回析装置を使用したX線CTR測定による半導体ヘテロ構造界面評価" 電子情報通信学会技報. ED96-40. 69-74 (1996)

Tabuchi、Takeda 等人：“使用基于实验室的 X 射线衍射装置通过 X 射线 CTR 测量评估半导体异质结构界面”IEICE 技术报告 ED96-40 (1996)。

Y.Takeda et al.: "Local structure analysis around Er doped uniformly in InP by fluorescence EXAFS" Technical Report of IEICE. ED95-117. 7-12 (1995)

Y.Takeda等人：“通过荧光EXAFS对InP中Er均匀掺杂的局域结构进行分析”IEICE的技术报告。

Y.Fujiwara, Y.Takeda et al.: "Erbium delta-doping to InP by OMVPE" Inst.Phys.Conf.Ser.Vol.145. 149-154 (1996)

Y.Fujiwara、Y.Takeda 等人：“OMVPE 对 InP 进行铒 δ 掺杂”Inst.Phys.Conf.Ser.Vol.145。