Study on substrate surface modification by ion beam irradiation

本研究旨在利用离子束辐照改善表面物理性能，以控制薄膜的生长过程。结果如下将离子枪与高真空腔相结合，构建了离子枪表面修饰装置。发现位于离子枪和高真空室之间的质量分离系统具有足够的分辨率为实现多晶硅薄膜在非晶板上的低温沉积，采用硅离子束辐照改善玻璃表面的物理性能。然后，在室温下，发现在玻璃表面产生了结晶核经过上述工艺处理后，在覆盖有半晶化核的玻璃表面，在低于300℃的温度下获得了多晶硅薄膜。真空蒸发法测定糖化血红蛋白。这样，低温(低于300？采用离子束辐照技术，实现了多晶硅薄膜在非晶衬底上的A1C沉积，改善了表面物理性能。

This study aims at improving surface physical properties by ion beam irradiation for controlling the film growth processes. The following are the results.1 The apparatus for substate surface modification with ion gun was constructed, combining the ion gun with the high vacuum chamber. And mass separation system located between the ion gun and high vaccum chamber was found to have enough resolutions.2 To realize low temperatute deposition of poly-silicon thin film on amorphous sbstrate, improving surface physical properties by silicon ion beam irradiation was adapted to the glass surface. Then, crystallized nuclees was found to be created on the glass surface at room temperature.3 On the glass surface covered with cyastallized nuclees after the above process, polycrystalline silicon thin film was obtained at below 300? A1C by E.B.vaccum evaporation of sillcon.In this way, low temperature (below 300? A1C) deposition of poly-silicon thin film on amorphous substrate was realized with improving surface physical properties by ion beam irradiation.