Study on substrate surface modification by ion beam irradiation

本研究旨在通过离子束辐照来改善薄膜的表面物理性质，以控制薄膜的生长过程。研究结果如下：1.将离子枪与高真空室相结合，构建了离子枪基态表面改性装置。而位于离子枪和高真空室之间的质量分离系统具有足够的分辨率。2.为了在非晶质衬底上实现多晶硅薄膜的低温沉积，采用硅离子束辐照改善玻璃表面的物理性能。3在玻璃表面覆盖有晶化晶核的玻璃表面，在低于300℃的温度下获得了多晶硅薄膜。在真空蒸发硅胶的情况下，低温(低于300℃？通过离子束辐照改善了多晶硅薄膜的表面物理性质，实现了多晶硅薄膜在非晶态衬底上的沉积。

This study aims at improving surface physical properties by ion beam irradiation for controlling the film growth processes. The following are the results.1 The apparatus for substate surface modification with ion gun was constructed, combining the ion gun with the high vacuum chamber. And mass separation system located between the ion gun and high vaccum chamber was found to have enough resolutions.2 To realize low temperatute deposition of poly-silicon thin film on amorphous sbstrate, improving surface physical properties by silicon ion beam irradiation was adapted to the glass surface. Then, crystallized nuclees was found to be created on the glass surface at room temperature.3 On the glass surface covered with cyastallized nuclees after the above process, polycrystalline silicon thin film was obtained at below 300? A1C by E.B.vaccum evaporation of sillcon.In this way, low temperature (below 300? A1C) deposition of poly-silicon thin film on amorphous substrate was realized with improving surface physical properties by ion beam irradiation.