Study on substrate surface modification by ion beam irradiation

本研究旨在借由离子束照射以改善薄膜表面物理性质，进而控制薄膜成长过程。将离子枪与高真空室相结合，建立了离子枪基片表面改性装置。在离子枪和高真空室之间的质量分离系统具有足够的分辨率。2为了实现在非晶衬底上低温沉积多晶硅薄膜，采用硅离子束辐照改善玻璃表面的物理性能。然后，发现在室温下在玻璃表面上产生结晶核。3在上述过程后覆盖有结晶核的玻璃表面上，在低于300 ℃下获得多晶硅薄膜。采用电子束真空蒸发硅的方法，在低温（300 ℃以下）下，采用离子束辐照技术在非晶衬底上沉积多晶硅薄膜，改善了薄膜的表面物理性能。

This study aims at improving surface physical properties by ion beam irradiation for controlling the film growth processes. The following are the results.1 The apparatus for substate surface modification with ion gun was constructed, combining the ion gun with the high vacuum chamber. And mass separation system located between the ion gun and high vaccum chamber was found to have enough resolutions.2 To realize low temperatute deposition of poly-silicon thin film on amorphous sbstrate, improving surface physical properties by silicon ion beam irradiation was adapted to the glass surface. Then, crystallized nuclees was found to be created on the glass surface at room temperature.3 On the glass surface covered with cyastallized nuclees after the above process, polycrystalline silicon thin film was obtained at below 300? A1C by E.B.vaccum evaporation of sillcon.In this way, low temperature (below 300? A1C) deposition of poly-silicon thin film on amorphous substrate was realized with improving surface physical properties by ion beam irradiation.