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Study on substrate surface modification by ion beam irradiation

Study on substrate surface modification by ion beam irradiation
离子束辐照基体表面改性研究
批准号:
05452126
负责人:
MORI Yuzo
金额:
$4.03万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994

项目摘要

项目成果

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中文摘要
翻译
本研究旨在通过离子束辐照来改善薄膜的表面物理性质,以控制薄膜的生长过程。研究结果如下:1.将离子枪与高真空室相结合,构建了离子枪基态表面改性装置。而位于离子枪和高真空室之间的质量分离系统具有足够的分辨率。2.为了在非晶质衬底上实现多晶硅薄膜的低温沉积,采用硅离子束辐照改善玻璃表面的物理性能。3在玻璃表面覆盖有晶化晶核的玻璃表面,在低于300℃的温度下获得了多晶硅薄膜。在真空蒸发硅胶的情况下,低温(低于300℃?通过离子束辐照改善了多晶硅薄膜的表面物理性质,实现了多晶硅薄膜在非晶态衬底上的沉积。
英文摘要
This study aims at improving surface physical properties by ion beam irradiation for controlling the film growth processes. The following are the results.1 The apparatus for substate surface modification with ion gun was constructed, combining the ion gun with the high vacuum chamber. And mass separation system located between the ion gun and high vaccum chamber was found to have enough resolutions.2 To realize low temperatute deposition of poly-silicon thin film on amorphous sbstrate, improving surface physical properties by silicon ion beam irradiation was adapted to the glass surface. Then, crystallized nuclees was found to be created on the glass surface at room temperature.3 On the glass surface covered with cyastallized nuclees after the above process, polycrystalline silicon thin film was obtained at below 300? A1C by E.B.vaccum evaporation of sillcon.In this way, low temperature (below 300? A1C) deposition of poly-silicon thin film on amorphous substrate was realized with improving surface physical properties by ion beam irradiation.
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Development of High?precision and High-ef icient Finishing Process of Over Meter Size Photomask Substrate for LCD
  • 批准号:
    18206017
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 资助金额:
    $30.37万
  • 财政年份:
    2006
  • 负责人:
    MORI Yuzo
  • 依托单位:
Electrochemical machining using ultrapure water
  • 批准号:
    11305014
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 资助金额:
    $20.14万
  • 财政年份:
    1999
  • 负责人:
    MORI Yuzo
  • 依托单位:
The development of the equipment for the ultra precision aspherical optics using plasma CVM.
  • 批准号:
    10355007
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 资助金额:
    $15.55万
  • 财政年份:
    1998
  • 负责人:
    MORI Yuzo
  • 依托单位:
Creation of Perfect Surfaces
  • 批准号:
    08CE2004
  • 项目类别:
    Grant-in-Aid for COE Research
  • 资助金额:
    $1085.44万
  • 财政年份:
    1996
  • 负责人:
    MORI Yuzo
  • 依托单位:
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