Study on substrate surface modification by ion beam irradiation

离子束辐照基体表面改性研究

• 批准号: 05452126
• 负责人: MORI Yuzo
• 金额: $ 4.03万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452126/
• 关键词: Ion gun; Surface modification; Silicon; Thin film; Low temperature deposition; シリコン薄膜; イオン照射; 薄膜用基板; 表面制御

This study aims at improving surface physical properties by ion beam irradiation for controlling the film growth processes. The following are the results.1 The apparatus for substate surface modification with ion gun was constructed, combining the ion gun with the high vacuum chamber. And mass separation system located between the ion gun and high vaccum chamber was found to have enough resolutions.2 To realize low temperatute deposition of poly-silicon thin film on amorphous sbstrate, improving surface physical properties by silicon ion beam irradiation was adapted to the glass surface. Then, crystallized nuclees was found to be created on the glass surface at room temperature.3 On the glass surface covered with cyastallized nuclees after the above process, polycrystalline silicon thin film was obtained at below 300? A1C by E.B.vaccum evaporation of sillcon.In this way, low temperature (below 300? A1C) deposition of poly-silicon thin film on amorphous substrate was realized with improving surface physical properties by ion beam irradiation.

本研究旨在借由离子束照射改善薄膜表面物理性质，以控制薄膜成长过程。将离子枪与高真空室相结合，建立了离子枪基片表面改性装置。在离子枪和高真空室之间的质量分离系统具有足够的分辨率。2为了实现在非晶衬底上低温沉积多晶硅薄膜，采用硅离子束辐照改善玻璃表面的物理性能。然后，发现在室温下在玻璃表面上产生结晶核。3在上述过程后覆盖有结晶核的玻璃表面上，在低于300 ℃下获得多晶硅薄膜。采用电子束真空蒸发硅的方法，在低温（300 ℃以下）下，采用离子束辐照技术在非晶衬底上沉积多晶硅薄膜，改善了薄膜的表面物理性能。