Study on Substrate Surface Modification

本研究旨在通过离子束辐照改善基底的表面物理性能，以控制离子束辐照的薄膜生长过程。去年建成了LMIS离子源系统和质量分离器。在5 ~ 10 KeV的束流能量范围内，建立了10 μ a以上的离子束电流。质量分离系统也有足够的分辨率。今年对SiO_2上的Sn体系进行了研究，发现在改进的衬底上，Sn^+离子束辐照量为3 × 10^<15 b> ions/cm^2，能量为70eV的情况下，获得了厚度为16A的连续Sn薄膜。本年度还对KCI上的Au体系进行了研究，发现在改进的衬底上，以能量为500eV的Au^+离子束照射量为1 × 10^<15 b> ions /cm^2，在室温下获得了厚度为70A的连续外延膜。如果没有这样的表面改善，在低于350^ C的温度下，Au在KCI上的外延生长无法观察到，薄膜厚度小于350A时，也无法获得连续的薄膜结构。这些结果表明了所提出的表面改进方法的有效性。

This study aims at improving surface physical properties of the substrate by ion beam irradiation for controlling the film growth processes by ion beam irradiation.Last year, LMIS ion source system and mass separator were constructed. And ion beam current of more than 10 muA was established in over the range from 5 to 10 KeV beam energies. And also mass separation system was found to have enough resolutions.This year, Sn on SiO_2 system was researched and it was found that continuous film of Sn with the thickness of 16A was obtained on the improved substrate with the Sn^+ ion beam irradiation of the amount of 3 X 10^<15> ions/cm^2 with the energy of 70eV.This year Au on KCI system was also researched and it was found that continuous epitaxial film of the thickness of 70A was obtained under room temperature on the improved substrate with the Au^+ ion beam irradiation of the amount of 1 X 10^<15> ions /cm^2 with the energy of 500eV. Without such surface improvements, epitaxial growth of Au on KCI can not be observed under the temperature of lower than 350^ﾟC, and continuous film structures can not be obtained as far as film thickness is thinner than 350A. These results show the efficiencies of the presented surface improvement method.