Study on Substrate Surface Modification

本研究的目的是利用离子束辐照来改善衬底的表面物理性质，以控制离子束辐照薄膜的生长过程。在5 ~ 10 KeV束流能量范围内，离子束流大于10 μ A。本年度对Sn/SiO_2体系进行了研究，发现在改进的衬底上，用3 × 10 ~（13）ions/cm ~ 2的Sn^+离子束辐照，可以得到厚度为16埃的连续Sn膜<15>本年度还进行了Au在KCl体系上的外延生长研究，发现在室温下，用Au^+在改进的衬底上获得了厚度为70埃的连续外延膜离子束辐照，辐照量为1 × 10 ~（13）<15>ions /cm ~ 2，能量为500 eV。如果没有这样的表面改性，则在低于350 ℃的温度下不能观察到Au在KCl上的外延生长，并且当膜厚小于350埃时不能获得连续的膜结构。这些结果表明了所提出的表面改进方法的有效性。

This study aims at improving surface physical properties of the substrate by ion beam irradiation for controlling the film growth processes by ion beam irradiation.Last year, LMIS ion source system and mass separator were constructed. And ion beam current of more than 10 muA was established in over the range from 5 to 10 KeV beam energies. And also mass separation system was found to have enough resolutions.This year, Sn on SiO_2 system was researched and it was found that continuous film of Sn with the thickness of 16A was obtained on the improved substrate with the Sn^+ ion beam irradiation of the amount of 3 X 10^<15> ions/cm^2 with the energy of 70eV.This year Au on KCI system was also researched and it was found that continuous epitaxial film of the thickness of 70A was obtained under room temperature on the improved substrate with the Au^+ ion beam irradiation of the amount of 1 X 10^<15> ions /cm^2 with the energy of 500eV. Without such surface improvements, epitaxial growth of Au on KCI can not be observed under the temperature of lower than 350^ﾟC, and continuous film structures can not be obtained as far as film thickness is thinner than 350A. These results show the efficiencies of the presented surface improvement method.