Study on Substrate Surface Modification

基材表面改性研究

• 批准号: 01460090
• 负责人: MORI Yuzo
• 金额: $ 3.52万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01460090/
• 关键词: LMIS; Ion Implantation; Epitaxy; Ultra-thin-film; 薄膜; アルカリハライド

This study aims at improving surface physical properties of the substrate by ion beam irradiation for controlling the film growth processes by ion beam irradiation.Last year, LMIS ion source system and mass separator were constructed. And ion beam current of more than 10 muA was established in over the range from 5 to 10 KeV beam energies. And also mass separation system was found to have enough resolutions.This year, Sn on SiO_2 system was researched and it was found that continuous film of Sn with the thickness of 16A was obtained on the improved substrate with the Sn^+ ion beam irradiation of the amount of 3 X 10^<15> ions/cm^2 with the energy of 70eV.This year Au on KCI system was also researched and it was found that continuous epitaxial film of the thickness of 70A was obtained under room temperature on the improved substrate with the Au^+ ion beam irradiation of the amount of 1 X 10^<15> ions /cm^2 with the energy of 500eV. Without such surface improvements, epitaxial growth of Au on KCI can not be observed under the temperature of lower than 350^ﾟC, and continuous film structures can not be obtained as far as film thickness is thinner than 350A. These results show the efficiencies of the presented surface improvement method.

本研究旨在通过离子束辐照改善基底的表面物理性能，从而控制离子束辐照薄膜的生长过程。去年，构建了LMIS离子源系统和质量分离器。并且在5至10KeV的束能量范围内建立了超过10μA的离子束电流。质量分离系统也具有足够的分辨率。今年对SiO_2系统上的Sn进行了研究，发现在能量为70eV、3 X 10^<15>ions/cm^2数量的Sn^+离子束照射下，在改进的衬底上得到了厚度为16A的连续Sn薄膜。今年还对KCI系统上的Au进行了研究，发现可以连续外延生长。 采用Au^+离子束照射，剂量为1×10^15离子/cm^2，能量为500eV，室温下在改进后的基板上得到厚度为70埃的薄膜。如果没有这样的表面改进，在低于350^C的温度下就无法观察到Au在KCI上的外延生长，并且只要膜厚度小于350A就无法获得连续的膜结构。这些结果显示了所提出的表面改进方法的效率。

项目成果

Yuzo Mori: "Design of a Large Current Liguid Metal Ion Source" Technology Reports of the Osaka University. 40. 103-111 (1990)

Yuzo Mori：《大电流液态金属离子源的设计》大阪大学技术报告。

森勇藏: "超高真空用大電流イオンビ-ム表面改質装置の開発" 精密工学会誌.

森雄三：“超高真空用强电流离子束表面改性装置的开发”日本精密工程学会杂志。

Yuzo Mori: "Substrate Surface Modification by Ion Irradiation IIーLow Temperature Epitaxial Growth of Auon the KCl Substrate Modified by Au^+ Iwadiationー" Technology Reports of the Osaka University. 40. 315-321 (1990)

森雄三：“离子照射的基板表面改性II－Au^+ Iwadiation改性的Auon KCl基板的低温外延生长－”大阪大学技术报告40. 315-321（1990）。

Yuzo Mori: "A design of large current ion gun employing liguid metal ion source" Review of Scientific Instruments. 61. 1874-1879 (1990)

Yuzo Mori：“采用液态金属离子源的大电流离子枪的设计”《科学仪器评论》。

Yuzo Mori: "Substrate Surface Modification by Ion Irradiation IーFormation of a Sn Ultraーthin Films on the SiO_2 Substrate Modified by Sn^+ Irradiation" Technology Reports of the Osaka University. 40. 303-313 (1990)

Yuzo Mori：“通过离子辐照进行基材表面改性 I-在 Sn^+ 辐照改性的 SiO_2 基材上形成 Sn 超薄膜”，大阪大学技术报告 40. 303-313 (1990)。