The development of the equipment for the ultra precision aspherical optics using plasma CVM.

点击翻译按钮获取中文摘要

Plasma CVM is a machining method using the radical formed by the plasma over the atmospheric pressure. The very high-density radical is formed by utilizing the high pressure plasma, and it is possible to limit the plasma generation region to the vicinity of the electrode which the high electric field affects, because of the small mean free path of the gas. Therefore, it is possible to combine processing efficiency and shape control which are equal to the mechanical machining. In this study, to make the new shape generating processing system based on the purely chemical principle, following items were practiced.1) Design and production of the numerical controlled plasma CVM machining system using the high-precise high-speed rotary electrode were carried out.2) Basic data on each machining parameter which give large effect in the localization of machining area, machining speed and machined surface roughness, were acquired.3) The plane mirror made of the silicon for synchrotron radiation beam line, was processed. Though the flatness of the mirror got by the mechanical polishing was 158nm (p-v), as a result of correction processing by this system, 22.5nm (p-v) was achieved.4) Film thinning of the silicon layer in SOI (Silicon On Insulator) wafer which was next generation semiconductor substrate was done. As a result of film thinning by this system, it succeeded in thinning the SOI layer of 0.2μm thickness to 0.04μm.