Creation of Perfect Surfaces
Creation of Perfect Surfaces
批准号:
08CE2004
负责人:
MORI Yuzo
金额:
$1085.44万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for COE Research
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 2002
中文摘要
先进技术和基础科学的各个领域都需要“完美表面”。本研究的目标是建立新的超精密加工技术,以制造出表面粗糙度小于0.5 nm PV,形状精度高于0.01μm PV的任意形状的“完美表面”,并将超精密加工技术作为一种新的自然科学范式系统化。我们建设了具有世界一流性能的超洁净加工车间,并在以下方面进行了研究:1)新加工工艺的开发;2)已加工表面的评定和新表面评定技术的开发;3)加工过程测控技术的发展;4)加工机理的理论研究。在1)领域,我们开发了数控等离子体化学汽化加工(NC-…)系统、弹性发射加工系统、常压等离子体化学加工系统高沉积速率下的更多气相沉积(AP-PCVD)工艺和仅使用纯水的羟基电化学加工(HECM)工艺。超精密X射线反射镜、超薄SOI晶片、硅薄膜太阳能电池和HECM大马士革工艺是众多成果中的几个。2)研制了超精密图形精度测量系统和超精密加工表面评定系统,3)研制了大气压等离子体诊断系统。基于第一性原理的计算结果,我们在4)中提出了高速电解加工,并阐明了其加工机理。综上所述,我们已经实现了三层原子层(0.1μm×0.1μm面积)的粗糙度和1 nm PV的图形精度。我们与需要完美表面的外部研究所合作,生产了扫描X射线显微镜系统和超薄SOI器件。这些成就远远超过了最初的目标。较少
英文摘要
"Perfect surfaces"are required in various areas of advanced technology and basic science. The objectives of the present research are to establish new ultra precision machining technology that can be used to create "perfect surfaces" with roughness less than 0.5nm PV and figure accuracy higher than 0.01μm PV for arbitrary shape, and to systematize the technology of ultra precision machining as a new paradigm of natural science.We have constructed Ultra Clean Room with the world's top performance and conducted researches in the following fields ; 1) development of new machining process ; 2) evaluation of machined surfaces and development of new-surface evaluation techniques ; 3) development of measurement and control technology for machining process ; and 4) theoretical study of machining mechanism.In the field 1), we have developed numerically controlled plasma chemical vaporization machining NC-PCVM) system, elastic emission machining (EEM) system, atmospheric pressure plasma chemical … More vapor deposition (AP-PCVD) process at high deposition rates, and hydroxyl electrochemical machining (HECM) process using pure water only. Ultra precision X-ray mirrors, ultra thin SOI wafers, Si thin film solar cells, and HECM damascene process are highlighted as several of numerous outcomes. An ultra precision measuring sytem of figure accuracy and an evaluation system for ultra precisely machined surfaces have been developed in 2), and a diagnostic system for atmospheric pressure plasma in 3). Based on calculated results by the originally developed first-principles methods, we have proposed HECM and clarified its machining mechanism in 4).In summary, we have achieved to create a "perfect surface" with the roughness of three atomic layers (in 0.1μm x 0.1μm area) and the figure accuracy of 1nm PV. Cooperating with outer institutes that need perfect surfaces, we have produced a scanning X-ray microscope system and ultra thin SOI devices. These achievements well surpassed the objectives at the beginning. Less
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Satoshi SASAKI: "Measurement of Nano-fine Particles on Si Wafer Surface by Laser Light Scattering Method"Journal of the Japan Society for Precision Engineering. 67. 1818-1823 (2001)
佐佐木聪:《利用激光光散射法测量硅晶片表面纳米微粒》日本精密工程学会会刊。
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Y.Mori: "Sub-micron focusing by reflective optics for scanning x-ray microscopy"Proc. SPIE. 4782. 58-64 (2002)
Y.Mori:“用于扫描 X 射线显微镜的反射光学器件的亚微米聚焦”Proc。
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森勇藏: "大気圧プラズマCVDによるSiの高速エピタキシャル成長(第2報)-成膜温度と投入電力が結晶性に及ぼす影響-"2002年度精密工学会春季学術講演会講演論文集. (2002)
Yuzo Mori:“通过大气压等离子体CVD进行Si的高速外延生长(第2次报告)-成膜温度和输入功率对结晶度的影响-”2002年日本精密工程学会春季学术会议论文集(2002年)。
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森勇藏: "超純水のみによる電気化学的加工法の研究-陰極表面における加工現象"精密工学会誌. (投稿中).
森雄三:“仅使用超纯水的电化学加工方法的研究-阴极表面的加工现象”日本精密工程学会杂志(正在提交)。
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後藤英和: "超純水のみによる電気化学的加工法の研究-水素終端化されていないSi(001)表面原子とOHとの反応素過程-"精密工学会誌. 67・8. 1321-1326 (2001)
Hidekazu Goto:“仅使用超纯水的电化学处理的研究 - 非氢封端的 Si(001) 表面原子与 OH 之间的基本反应过程 -”日本精密工程学会杂志 67・8(2001 年)。 )
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共 484 条
Development of High?precision and High-ef icient Finishing Process of Over Meter Size Photomask Substrate for LCD
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批准号:18206017
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$30.37万
-
财政年份:2006
-
负责人:MORI Yuzo
-
依托单位:
Electrochemical machining using ultrapure water
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批准号:11305014
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$20.14万
-
财政年份:1999
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负责人:MORI Yuzo
-
依托单位:
The development of the equipment for the ultra precision aspherical optics using plasma CVM.
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批准号:10355007
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$15.55万
-
财政年份:1998
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负责人:MORI Yuzo
-
依托单位:
Studies on radical generation mechanism in the atmospheric plasma etching
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批准号:07455063
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.99万
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财政年份:1995
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负责人:MORI Yuzo
-
依托单位:
Development of the appratus for making the ultra-fine particles for EEM utilizing atmospheric plasma CVD
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批准号:06555038
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$4.48万
-
财政年份:1994
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负责人:MORI Yuzo
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依托单位:
Study on substrate surface modification by ion beam irradiation
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批准号:05452126
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.03万
-
财政年份:1993
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负责人:MORI Yuzo
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依托单位:
Study on surface coating of ultra-fine particles for EEM machining.
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批准号:04555035
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$4.8万
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财政年份:1992
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负责人:MORI Yuzo
-
依托单位:
Study on Substrate Surface Modification
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批准号:01460090
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.52万
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财政年份:1989
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负责人:MORI Yuzo
-
依托单位:
Development of Surface Treatment Method for Ultra-Fine Powder Particles for Elastic Emission Machining (EEM)
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批准号:01850031
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项目类别:Grant-in-Aid for Developmental Scientific Research (B).
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资助金额:$5.06万
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财政年份:1989
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负责人:MORI Yuzo
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依托单位:
Crystallographical Control in Urtra-Precision Cutting
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批准号:61460093
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.1万
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财政年份:1986
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负责人:MORI Yuzo
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依托单位:
海外基金