SUPRESSION OF SHORT-CHANNEL EFFECT IN MOSFET WITH UV EXCIMER LASER DOPING

用紫外准分子激光掺杂抑制 MOSFET 中的短沟道效应

• 批准号: 05650335
• 负责人: MATSUMOTO Satoru
• 金额: $ 1.28万
• 依托单位: KEIO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650335/
• 关键词: UV excimer laser; Laser doping; Shallow junction; 2-step doping method; MOSFET fabrication; レーザドーピング; MOSFET; 2ステップドーピング

Two-step laser doping technique consisting of the deposition of dopant source by laser CVD and the introduction of dopant by laser melt was proposed to form very shallow junctions with very high surface concentrations. Characteristics of this technique were investigated in details in terms of sheet resistance and doping profiles. Changing the number of irradiated laser pulse in the dopant deposition process and the number of laser pulse in the silicon melting process, sheet resistance can be controlled precisely in the wide range.Very shallow (0.1mum) junctions with very high surface concentration (1x10^<20>cm^3) can be formed, indicating that this technique is applicable to form the source and drain region of MOSFETs.Using the two-step doping with excimer laser, p-channel MOSFETs were fabricated on SOS (silicon on sapphire) . Source and drain layrs were formed using two-step doping. Devices were processed at room temperature except for the LPCVD gate oxide deposited at 450C.High-quality MOSFETs were fabricated with on/off ratio of 7 and a field effect hole mobility of 145 cm^2/Vs

采用激光CVD沉积掺杂源和激光熔化引入掺杂剂的两步激光掺杂技术，形成了具有很高表面浓度的浅结。这种技术的特点进行了详细的研究，在薄层电阻和掺杂的档案。通过改变掺杂剂沉积过程中照射的激光脉冲数和硅熔化过程中的激光脉冲数，可以在很宽的范围内精确地控制薄层电阻。可以形成具有很高表面浓度（1 × 10 ~（-3）cm ~ 3）的很浅（0.1 μ m）结<20>，表明该工艺适用于MOSFET源漏区的形成，采用准分子激光两步掺杂，在SOS（蓝宝石上硅）上制造p沟道MOSFET。使用两步掺杂形成源极和漏极层。除了LPCVD栅氧化层在450 ℃下沉积外，器件在室温下加工。制备的高质量MOSFET的开/关比为7，场效应空穴迁移率为145 cm^2/Vs

项目成果

S.Chichibu: ""Use of tertiarybutylarsine in ArF excimer laser doping of arsenic into silicon"" J.Vacuum Science & Technology. Vol.11. 341-343 (1993)

S.Chichibu：“叔丁基胂在 ArF 准分子激光将砷掺杂到硅中的用途”J.Vacuum Science

Matsumoto, Satoru: ""Laser doping"" Optronics. Vol.135. 78-83 (1993)

松本悟：“激光掺杂”光电。

松本 智: "レーザードーピング" オプトロニクス. 135. 78-83 (1993)

松本聪：“激光掺杂”光电学 135. 78-83 (1993)。

S.Chichibu: "Heavily ar senic doping into Si by ArF excimer laser irradiation using tertiarybutylarsine" Materials Science Forum. 117-118. 243-248 (1993)

S.Chichibu：“使用叔丁基胂通过 ArF 准分子激光照射将砷大量掺杂到 Si 中”材料科学论坛。

小林昭(監修): "超精密生産技術大系 第2巻 実用技術「レーザド-ピング装置」(だだし、分担588-603ページ)" フジテクノシステム, 1553 (1994)

小林晃（监督）：“超精密生产技术系统第 2 卷实用技术‘激光掺杂装置’（第 588-603 页）”Fuji Techno System，1553（1994 年）