Fabrication of Highly Functional MMICs Using Traveling Wave Interaction Mode and Static Magnetic Wave Mode

使用行波相互作用模式和静态磁波模式制造高功能 MMIC

• 批准号: 04805028
• 负责人: AKAZAWA Masamichi
• 金额: $ 1.28万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04805028/
• 关键词: solid state TWA; GaAs; InGaAs; Inp; Interface State; MIS structure; ヘテロ界面; 磁性薄膜

The semiconductor carrier waves and their traveling wave interactions with the electromagnetic fields in InP and GaAs layrs using the metal-insulator-semiconductor (MIS)-type carrier confinement structure were studied. Traveling wave amplifier (TWA)-type devices were made and the admittance of the devices was measured. For the first time, the existence of carrier waves was observed from the drift velocity dependence of the admittance and two modes of interaction were observed from the frequency dependence of the drift velocity, which gave the reduction peaks of the conductance. To discuss their behavior, TM analysis using superposition of various space harmonics in terms of the modified effective permittivity for the drift plasma is presented. In the model, nonuniformity of the carrier distributions is considered. This model gives fairly good agreement between the experiments and theory. Moreover, the influence of the interface states on the interactions is studied theoretically. It is indicated that parasitic admittance due to a high interface state density cancels out negative conductance. But, when the interface state density is decreased to below 2x10^<11>cm^<-2>eV^<-1>, it is predicted that net negative conductance will be observed.On the other hand, In GaAs lattice matched to InP is promising material for advanced MMICs, with its high electron mobility. In the MIS structure, excellent characteristics of In GaAs is fully derived. Applying our original Si ICL technique to insulator - In GaAs interface, interface state density was reduced as low as 1x10^<11>cm^<-2>eV^<-1>. It is clear that InGaAs MIS structure is promising for the solid state TWA, which is key device in advanced MMICs.

研究了InP和GaAs中金属-绝缘体-半导体（MIS）型载流子限制结构中的半导体载流子及其行波与电磁场的相互作用。制作了行波放大器（TWA）型器件，并测量了器件的导纳.第一次从导纳的漂移速度依赖性观察到载波的存在，从漂移速度的频率依赖性观察到两种相互作用模式，这给出了电导的降低峰。为了讨论它们的行为，TM分析使用各种空间谐波的叠加在漂移等离子体的修改后的有效介电常数。模型中考虑了载流子分布的非均匀性。该模型给出了相当好的实验和理论之间的协议。此外，从理论上研究了界面态对相互作用的影响。结果表明，由于高界面态密度的寄生导纳抵消了负电导。但是，当界面态密度降低到2 × 10 ~ 4 cm ~（-1）eV ~（-1）以下<11><-2>时，<-1>将出现净负电导。另一方面，与InP晶格匹配的In GaAs由于其高的电子迁移率，有望成为先进MMIC的材料。在MIS结构中，InGaAs的优良特性得到了充分的体现。将我们的原始Si ICL技术应用于绝缘体- In GaAs界面，界面态密度降低至低至1 × 10 - <11>4cm-2 <-2>eV-2<-1>。可见，InGaAs MIS结构在固态TWA器件中具有广阔的应用前景，TWA器件是先进MMIC的关键器件。

项目成果

S.Suzuki,Y.G.Xie,T.Sawada and H.Hasegawa: "Application of Sillicon Interface Control Layer Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs" Proc.of 1st Int.Symp.Control of Scmiconductor Interfaces(Karuizawa,Japan). to be published.(1

S.Suzuki、Y.G.Xie、T.Sawada 和 H.Hasekawa：“Application of Sillicon Interface Control Layer Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs”Proc.of 1st Int.Symp.Control of Scmiconductor Interfaces（轻井泽，日本）

S.Kodama and H.Hasegawa: ""Control of Silicon Nitride-In_<0.53>Ga_<0.47>As Interface by Ultrathin Silicon Interface Control Layr"" Proc.of 1st Int.Symp.Control of Semiconductor Interfaces (Karuizawa, Japan, November 8-12, 1993). (to be published).

S.Kodama 和 H.Hasekawa：“通过超薄硅界面控制层控制氮化硅-In_<0.53>Ga_<0.47>As 界面”Proc.of 1st Int.Symp.Control of Semiconductor Interface（轻井泽，日本，

M.Akazawa,H.Hasegawa,H.Tomozawa and H.Fujikura: "Investigation of valence band offset modification at GaAs-AlAs and InGaAs-InAlAs heterointerfaces by a Si interlayer" Proc.of 19th Int.Symp.GaAs and Related Compounds(Karuizawa,Japan,28 September-2 October)

M.Akazawa、H.Hasekawa、H.Tomozawa 和 H.Fujikura：“Si 中间层对 GaAs-AlAs 和 InGaAs-InAlAs 异质界面的价带偏移修改的研究”Proc.of 19th Int.Symp.GaAs 和相关化合物（

S.Suzuki, Y.G.Xie, T.Sawada and H.Hasegawa: ""Application of Silicon Interface Control Layr Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs"" Proc.of 1st Int.Symp.Control of Semiconductor Interfaces (Karuizawa, Japan, November 8-12,

S.Suzuki、Y.G.Xie、T.Sawada 和 H.Hasekawa：“硅界面控制层技术在 InGaAs 金属-绝缘体-半导体 FET 制造中的应用”Proc.of 1st Int.Symp.Control of Semiconductor Interfaces (Karuizawa)

S.Kodama and H.Hasegawa: "Control of Sillicon Nitride-In_<0.53> Ga_<0.47> As Interface by Ultrahin Sillicon Interface Control Layer" Proc.of 1st Int.Symp.Control of Scmiconductor Interfaces(Karuizawa,Japan). to be published.(1994)

S.Kodama 和 H.Hasekawa：“通过 Ultrahin 硅界面控制层控制氮化硅-In_<0.53> Ga_<0.47> 作为界面”Proc.of 1st Int.Symp.Control of Scmiconductor Interfaces（轻井泽，日本）。