Fabrication of Nano-Structual DLC/Si film Using Electrostatic Microparticle-Impact-Deposition

研究制造新的纳米结构混合膜中的金刚石样碳（DLC）和硅是通过制造碳（C）和硅（Si）超精细粒子的混合物与基底，使用并联电极在直流高电压下维护的混合粒子之间的静电加速，在高真空或低压力氢气体中。Furthermore，对薄膜的增长效率和电气结构特性的改进是通过使用氢等离子体蚀刻和辅助用途的磁场和高频电场进行调查的。大致上，下面的结果被发现了：（1）对于混合膜的生长和直流条件特征， 1）形成的膜中的硅含量的速率增加了在传播中的硅混合物的速率，通过大约20%存在的硅含量的上限。（2）DC通过DLC渠道的使用行为，以及对硅含量的抵抗性增加取决于硅含量的速率。3）当硅含量增加的速率增加时，DLC在电影中的变化略微进入图形结构。（2）关于磁场（MS）和高频电场（RF）的助理效应;（1）当助理场被使用时，电影增长的速率与仅应用直流场的比较增加。However，当MS和RF场一起使用时，增长率下降了一点。这些结果提出了关于氢等离子体对粒子的粘附和通过电影生长过程进行材料蚀刻的结果。2）由于电影的跳跃性质、抵抗力及其与MS的温度协同增加<RF-MS通过等离子体蚀刻的活动。本建议是，靠近费米水平的本地状态的密度已被消除为DLC中的危险债券的退化，并与（2）-1）中的结果作出了相应的回应。

Studies on fabricating a new nano・structual mixture film of diamond-like carbon (DLC) and silicon are done by making the mixture of ultra fine particles of carbon(C) and silicon(Si) collide with substrate, using electrostatic acceleration of the mixed particles between parallel electrodes maintained at dc high voltage, in a high vacuum or in low-pressure hydrogen gas. Furthermore, improving of the growth efficiency and the electronic structural characteristic of the film are investigated by using hydrogen plasma etchings with assistant use of magnetic field and high frequency electric field. Consequently, the following results are obtained :(1)For the mixture film growth and dc conduction characteristic, 1)the rate of Si content in the formed film is increased in proportion to the rate of Si mixture of starting particles though a upper limit of Si content of about 20% exists. 2)The dc conduction occurs through the channel of DLC, and the resistively increases depending on the rate of Si content. 3)The DLC in the film changes slightly into graphitic structure when the rate of Si content increased.(2)On the assistant effect of magnetic field (MS) and high-frequency electric field (RF), 1)when the assistant fields are used, the rate of film growth is increased in comparison with that of only dc field applied. However, when the MS and RF fields are used together, the growth rate is decreased a little. These results suggest that the hydrogen plasma contributes to the adhesion of particles and the material etching through the film growth process. 2) For the hopping-conduction property of the film, the resistivity and its temperature coefficient increase according to MS<RF-MS by the activity of plasma etching. This suggests that the density of localized state near Fermi level is decreased due to decrease of dangling bonds in DLC, corresponding with the result mentioned in (2)-1).