Fabrication of Nano-Structual DLC/Si film Using Electrostatic Microparticle-Impact-Deposition

采用静电微粒冲击沉积法制备纳米结构 DLC/Si 薄膜

• 批准号: 14350388
• 负责人: IDE Takashi
• 金额: $ 3.65万
• 依托单位: Ehime University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350388/
• 关键词: Diamond-like Carbon Film; Ultra-fine Particle; Diamond-Like Carbon Film; Electrostatic Acceleration; Hydrogen Plasma Etching; Hopping Conduction; Magnetron Sputtering; Fabrication of Thin Film; シリコン複合化DLC膜; ナノスケール混合組織; 機能性材料; 静電加速

Studies on fabricating a new nano・structual mixture film of diamond-like carbon (DLC) and silicon are done by making the mixture of ultra fine particles of carbon(C) and silicon(Si) collide with substrate, using electrostatic acceleration of the mixed particles between parallel electrodes maintained at dc high voltage, in a high vacuum or in low-pressure hydrogen gas. Furthermore, improving of the growth efficiency and the electronic structural characteristic of the film are investigated by using hydrogen plasma etchings with assistant use of magnetic field and high frequency electric field. Consequently, the following results are obtained :(1)For the mixture film growth and dc conduction characteristic, 1)the rate of Si content in the formed film is increased in proportion to the rate of Si mixture of starting particles though a upper limit of Si content of about 20% exists. 2)The dc conduction occurs through the channel of DLC, and the resistively increases depending on the rate of Si content. 3)The DLC in the film changes slightly into graphitic structure when the rate of Si content increased.(2)On the assistant effect of magnetic field (MS) and high-frequency electric field (RF), 1)when the assistant fields are used, the rate of film growth is increased in comparison with that of only dc field applied. However, when the MS and RF fields are used together, the growth rate is decreased a little. These results suggest that the hydrogen plasma contributes to the adhesion of particles and the material etching through the film growth process. 2) For the hopping-conduction property of the film, the resistivity and its temperature coefficient increase according to MS<RF-MS by the activity of plasma etching. This suggests that the density of localized state near Fermi level is decreased due to decrease of dangling bonds in DLC, corresponding with the result mentioned in (2)-1).

研究了在直流高压、高真空或低压氢气中，利用平行电极间的静电加速，使碳（C）和硅（Si）的混合微粒与基底碰撞，制备新型纳米结构的类金刚石碳（DLC）和硅（Si）混合膜。此外，还研究了在磁场和高频电场的辅助下，采用氢等离子体刻蚀技术提高薄膜的生长效率和电子结构特性。结果，得到下列结果：（1）对于混合膜生长和直流导电特性，1）所形成的膜中Si含量的比率与起始颗粒的Si混合比率成比例地增加，尽管存在约20%的Si含量上限。2)直流导电通过DLC的通道发生，并且电阻率依赖于Si含量的比率而增加。3)随着硅含量的增加，薄膜中的类金刚石薄膜逐渐向石墨化转变。(2)On磁场（MS）和高频电场（RF）的辅助作用：1）与单独施加直流电场相比，使用辅助电场时，薄膜生长速率有所提高。但是，当MS和RF场一起使用时，生长速率略有下降。这些结果表明，氢等离子体有助于通过薄膜生长过程中的颗粒的粘附和材料蚀刻。2)由于薄膜的跳跃导电特性，在等离子体刻蚀的作用下，薄膜的电阻率和温度系数按MS<RF-MS的规律增大。这表明，由于DLC中悬挂键的减少，费米能级附近的定域态密度降低，与（2）-1）中提到的结果相对应。