Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its Application

纳米级肖特基接触对金属-化合物半导体界面的控制及其应用

基本信息

  • 批准号:
    11450115
  • 负责人:
  • 金额:
    $ 9.66万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
  • 财政年份:
    1999
  • 资助国家:
    日本
  • 起止时间:
    1999 至 2000
  • 项目状态:
    已结题

项目摘要

The purpose of this research was attempt to control metal-compound semiconductor interfaces by forming size-controlled nano-Schottky contacts and thereby removing the Fermi level pinning. The main results obtained are listed below :(1)Metal-semiconductor(M-S)interfaces formed by an electrochemical process was found to consist of metal nano-dots. By changing applied pulse conditions, dot size and the number of the dots could be controlled. Formation of small and uniform-size-metal dot relaxes Fermi level pinning at M-S interfaces and enhanced the metal-workfunction dependence of Schottky barrier heights. This opened up a possibility to control Schottky barrier heights toward the Schottky limit.(2)By the combination of the electrochemical process and electron-beam lithography techniques, a few ten nanometer-size nano-Schottky line gates and a few ten nanometer-sized highly uniform nano-dot arrays were successfully formed.(3)Current transport through M-S interfaces in single metal nano-dot-compound semiconductor systems was investigated by a conductive tip atomic force microscopy(AFM). The transport mechanism was theoretically studied by a newly developed device simulator for nano-Schottky interfaces. In the single metal-dot nano-Schottky contacts, reduction of the metal nano-dot size enhanced the metal-workfunction dependence. However, environmental surface Fermi level pinning around the nano-Schottky gates was found to affect strongly the potential control.(4)Nano-Schottky interface formation technology utilizing the electrochemical process were applied to realization of various quantum devices including GaAs-and InGaAs-based quantum wire transistors, single electron devices and memory devices. The fabricated devices showed proper and designed operations, and the effectiveness of the present technology was confirmed.
本研究的目的是试图通过形成尺寸可控的纳米肖特基接触来控制金属-化合物半导体界面,从而消除费米能级钉扎。主要研究结果如下:(1)电化学过程中形成的金属-半导体(M-S)界面由金属纳米点组成。通过改变施加的脉冲条件,可以控制点的尺寸和点的数量。小而均匀尺寸的金属点的形成使M-S界面处的费米能级钉扎松弛,并增强了肖特基势垒高度对金属功函数的依赖性。这开辟了一种可能性,以控制肖特基势垒高度接近肖特基极限。(2)By将电化学工艺与电子束光刻技术相结合,成功地形成了几十个纳米尺寸的纳米肖特基线栅和几十个纳米尺寸的高度均匀的纳米点阵列。(3)利用导电针尖原子力显微镜(AFM)研究了单金属纳米点-化合物半导体系统中M-S界面的电流输运。利用新开发的纳米肖特基界面器件模拟器对输运机制进行了理论研究。在单金属点纳米肖特基接触中,金属纳米点尺寸的减小增强了金属功函数依赖性。然而,周围的纳米肖特基栅的环境表面费米能级钉扎被发现强烈影响的电位控制。(4)利用电化学过程的纳米肖特基界面形成技术被应用于实现各种量子器件,包括GaAs和InGaAs基量子线晶体管、单电子器件和存储器件。所制造的器件显示出适当的和设计的操作,并且证实了本技术的有效性。

项目成果

期刊论文数量(386)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Jpn. J. Appl. Phys.. 39. 2407-2413 (2000)
S.Ootomo:“通过射频氮自由基和电子回旋共振氮等离子体对 GaP (100) 表面进行氮化”Jpn。
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    0
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H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine"Solid State Electronics. 43. 1541-1546 (1999)
H.Sai:“使用叔丁基膦通过气源分子束外延提高器件质量 InGaP/GaAs 异质结构”固态电子学。
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    0
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S.Ootomo, T.Hashizume and H.Hasegawa: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Jpn.J.Appl.Phys.. 39. 2407-2413 (2000)
S.Ootomo、T.Hashizume 和 H.Hasekawa:“通过射频氮自由基和电子回旋共振氮等离子体对 GaP (100) 表面进行氮化”Jpn.J.Appl.Phys.. 39. 2407-2413 (2000)
  • DOI:
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  • 影响因子:
    0
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  • 通讯作者:
S.kasai: "Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors"Physica B. 272. 88-91 (1999)
S.kasai:《GaAs肖特基绕栅单电子晶体管的电导振荡特性》Physica B. 272. 88-91 (1999)
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
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  • 通讯作者:
H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. (in press). (2000)
H.Hasekawa:《先进介观器件概念和技术》微电子工程。
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HASEGAWA Hideki其他文献

Influenza A virus (IAV) vaccination effectively induces germinal center
甲型流感病毒(IAV)疫苗接种可有效诱导生发中心
  • DOI:
  • 发表时间:
    2014
  • 期刊:
  • 影响因子:
    0
  • 作者:
    MIYAUCHI Kosuke;SUGIMOTO-ISHIGE Akiko;TAKAHASHI Yoshimasa;HASEGAWA Hideki;TAKEMORI Toshitada;KUBO Masato
  • 通讯作者:
    KUBO Masato

HASEGAWA Hideki的其他文献

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{{ truncateString('HASEGAWA Hideki', 18)}}的其他基金

Research for Immunotherapy of Adult T cell Leukemia(ATL)
成人T细胞白血病(ATL)免疫治疗研究
  • 批准号:
    21590521
  • 财政年份:
    2009
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
International Organization of Francophonie and multicultural and cultural society
法语国家国际组织和多元文化和文化社会
  • 批准号:
    20530456
  • 财政年份:
    2008
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire Networks
基于 GaN 的化学传感器及其使用纳米线网络的片上集成
  • 批准号:
    18360002
  • 财政年份:
    2006
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky Gates
基于采用纳米肖特基门控制的量子点的 BDD 架构的单电子集成电路
  • 批准号:
    13305020
  • 财政年份:
    2001
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limit
研究和开发在量子极限附近运行的基于 III-V 量子线晶体管的逻辑和存储电路
  • 批准号:
    12555083
  • 财政年份:
    2000
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Novel Insulated Gate Structure having Ultrathin Si Quantum Well for Realization of InP-Based Ultra High-Frequency and High-Power Devices
新型超薄硅量子阱绝缘栅结构实现InP基超高频大功率器件
  • 批准号:
    10555098
  • 财政年份:
    1998
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"
“金属-半导体界面肖特基极限的实现及其在电子器件中的应用”
  • 批准号:
    09450118
  • 财政年份:
    1997
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
"Control of surface and interfaces of nano-structures for single electron devices"
“单电子器件纳米结构表面和界面的控制”
  • 批准号:
    08247101
  • 财政年份:
    1996
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High Vacuum
超高真空非接触式无损电容电压测量系统的研制
  • 批准号:
    08555072
  • 财政年份:
    1996
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices
III-V族半导体量子结构表面态控制及其在新型光学器件中的应用
  • 批准号:
    07455017
  • 财政年份:
    1995
  • 资助金额:
    $ 9.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
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