Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limit
Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limit
批准号:
12555083
负责人:
HASEGAWA Hideki
金额:
$8.58万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001
中文摘要
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英文摘要
The purpose of this research was to study and develop novel logic and memory circuits that operate ultra-small delay-power product near the quantum limit by utilizing III-V compound semiconductor quantum wire transistors. The main results obtained are listed below :(1) A novel single electron memory device having a metal nano-dot for charging and a Schottky in-plane gate (IPG) quantum wire transistor (QWRTr) for dot-charge detection was proposed, fabricated and its basic operation was confirmed.(2) As single electron integrated circuits, single electron inverter circuits utilizing Schottky wrap gate (WPG) GaAs single electron transistor (SETs), including QWRTr road type inverters and complementary inverters, were designed, fabricated and characterized. Transfer gain larger than unity was obtained in the QWRTr road type inverter.(3) A novel approach for quantum logic circuits operating with ultra-low delay-power product near the quantum limit. It is based on implementation of a binary d … More ecision diagram (BDD) logic architecture by quantum wire transistors, was proposed. BDD node devices were fabricated using GaAs etched nanowire and nano-Schottkys and their basic operations were confirmed. Fundamental logic circuits constructed by integrating the BDD devices operated correctly.(4) Highly uniform and size-controllable InGaAs and GaAs embedded ridge quantum wire arrays were grown by selective MBE growth as basic starting structures for quantum wire transistors. Submicron-pitch high-density InGaAs quantum wire arrays were realized by an atomic hydrogen treatment and optimization of pre-growth process.(5) For successful surface passivation of III-V QWRTrs, their surfaces were characterized by scanning tunneling spectroscopy (STS). The mechanism of anomalous STS spectra was clarified. From this analysis, it was found that surface states with continuously distribution in space and energy cause surface Fermi level pinning. Surface passivation method using ultrathin Si interface control layer was optimized and verified by contactless C-V, PL and STS. Less
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H. Okada, H. Hasegawa: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors"Japanese Journal of Applied Physics. 40. 2797-2800 (2001)
H. Okada、H. Hasekawa:“使用金属纳米点和肖特基平面栅极量子线晶体管的新型单电子存储器件”日本应用物理学杂志。
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C. Jiang, T. Muranaka, H. Hasegawa: "Structural and Optical Properties of 10 nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal Applied Physics. (in press). (2002)
C. Jiang、T. Muranaka、H. Hasekawa:“通过选择性 MBE 在图案化 InP 衬底上生长的亚微米间距的 10 纳米级 InGaAs 脊量子线阵列的结构和光学特性”日本应用物理学杂志。
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S. Anantathanasarn, H. Hasegawa: "Photoluminescence and Capacitance-Voltage Characterization of GaAs Surface Passivated by an Ultrathin GaN Interface Control Layer"Applies Surface Science. (in press). (2002)
S. Anantathanasarn、H. Hasekawa:“超薄 GaN 界面控制层钝化的 GaAs 表面的光致发光和电容电压特性”应用表面科学。
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M.Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. (in press). (2002)
M.Yumoto:“基于图的量子逻辑电路及其利用肖特基包裹门的新型砷化镓多量子线分支开关的实现”微电子工程。
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T.Hirano: "Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of lnGaAs Quantum Wires and Dots"Japanese Journal of Applied Physics. (in press). (2002)
T.Hirano:“自组装 InP 纳米孔阵列的电化学形成及其用作 lnGaAs 量子线和点分子束外延生长的模板”日本应用物理学杂志。
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共 159 条
Research for Immunotherapy of Adult T cell Leukemia(ATL)
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批准号:21590521
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
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财政年份:2009
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负责人:HASEGAWA Hideki
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依托单位:
International Organization of Francophonie and multicultural and cultural society
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批准号:20530456
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.0万
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财政年份:2008
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负责人:HASEGAWA Hideki
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依托单位:
GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire Networks
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批准号:18360002
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.99万
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财政年份:2006
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负责人:HASEGAWA Hideki
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依托单位:
Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky Gates
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批准号:13305020
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$35.44万
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财政年份:2001
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负责人:HASEGAWA Hideki
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依托单位:
Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its Application
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批准号:11450115
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.66万
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财政年份:1999
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负责人:HASEGAWA Hideki
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依托单位:
Novel Insulated Gate Structure having Ultrathin Si Quantum Well for Realization of InP-Based Ultra High-Frequency and High-Power Devices
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批准号:10555098
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.26万
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财政年份:1998
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负责人:HASEGAWA Hideki
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依托单位:
"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"
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批准号:09450118
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.09万
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财政年份:1997
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负责人:HASEGAWA Hideki
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依托单位:
"Control of surface and interfaces of nano-structures for single electron devices"
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批准号:08247101
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$143.3万
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财政年份:1996
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负责人:HASEGAWA Hideki
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依托单位:
Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High Vacuum
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批准号:08555072
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$3.84万
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财政年份:1996
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负责人:HASEGAWA Hideki
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依托单位:
Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices
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批准号:07455017
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.74万
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财政年份:1995
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负责人:HASEGAWA Hideki
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依托单位:
Characterization and Control of Interaction between Quantized Energy Levels and Surface/Interface States in Compound Semiconductor Quantum Structures.
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批准号:05452181
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.54万
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财政年份:1993
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负责人:HASEGAWA Hideki
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依托单位:
A Novel Contactless and Nondestructive Measurement Method of Surface State Density on Semiconductor Free Surface, and Control of Their Surfaces
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批准号:03452147
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.48万
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财政年份:1991
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负责人:HASEGAWA Hideki
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依托单位:
A new MIS Interface Control Technology for Fabrication of High Spatial Resolution InGaAs Change Coupled Devices for Imaging
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批准号:03555056
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$8.7万
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财政年份:1991
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负责人:HASEGAWA Hideki
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依托单位:
New Waveguides for Microwave Monolithic Integrated Circuits Using Distributed Parameter Effects of Semiconductor Carriers
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批准号:63460115
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.22万
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财政年份:1988
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负责人:HASEGAWA Hideki
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依托单位:
海外基金