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GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire Networks

基于 GaN 的化学传感器及其使用纳米线网络的片上集成

基本信息

批准号：
18360002
负责人：
HASEGAWA Hideki
金额：
$ 10.99万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360002/
关键词：
hydrogen sensor liquid sensor nitride semiconductors Schottky diode Fermi level pinning sensor network integrated sensor nanowire 集積回路 2分決定論理

项目摘要

This project investigates key technologies for realization of GaN-based high-sensitivity chemical sensors and their on-chip integration using nanowires. The main conclusions are as follows: (1) Interface models on Schottky barrier formation are surveyed, and key issues related to AlGaN/GaN Schottky barriers including Fermi level pinning, Schottky barrier height (SBH) and reverse leakage currents are discussed. The current transport is explained by the thin surface barrier (TSB) model. Leakage currents can be reduced by the oxygen gettering process. (2) Pd Schottky barrier hydrogen sensors fabricated on AlGaN/GaN HEMT wafers exhibit unprecedented high sensitivities by applying the oxygen gettering process. (3) Its sensing mechanism is SBH reduction by interface dipole formed by atomic hydrogen which is produced at the Pd surface and diffuses to the Schottky interface. The rate limiting process for transient responses is surface reaction. Mathematical formulas for description of steady-s … More tate and transient response are given. (4) Sensitivity of AlGaN/GaN hydrogen sensors increases at higher temperatures, and they perform better than those by other major III-V semiconductors. (5) Slow transients are observed in hydrogen sensor diodes, and they can be explained by the dispersive transport due to time-continual hopping of electrons through surface states. This has led to a new model of current collapse in AlGaN/GaN HEMTs. (6)pH sensing HEMTs fabricated using an electrolyte/AlGaN gate structure, show nearly ideal Nernstian responses. Issues related to realization of bio-sensors using this structure are discussed. (7) For on-chip integration of sensors, implementation of a BDD (binary decision diagram) information processing architecture on hexagonal nanowire networks has been proposed. The proposal includes key elements such as basic integration unit, a sensor bridge, a sensor array structure, a selective MBE method for nanowire network formation and a wireless communication circuit integrated with an on-chip antenna. Their feasibilities have been proved. Less

本项目研究了实现GaN基高灵敏度化学传感器及其纳米线在片集成的关键技术。主要结论如下：(1)综述了肖特基势垒形成的界面模型，讨论了与AlGaN/GaN肖特基势垒相关的费米能级钉扎、肖特基势垒高度和反向漏电流等关键问题。电流输运用薄表面势垒模型解释。氧吸除工艺可以减少漏电流。(2)在AlGaN/GaN HEMT衬底上制作的Pd肖特基势垒氢敏传感器采用氧吸除工艺，具有前所未有的高灵敏度。(3)其传感机制是由Pd表面产生的扩散到肖特基界面的原子氢形成的界面偶极子对SBH的还原。瞬时响应的限速过程是表面反应。描述定常的数学公式--S…给出了更多的稳态和暂态响应。(4)AlGaN/GaN氢敏元件的灵敏度随温度的升高而提高，其性能优于其他主要的III-V半导体。(5)在氢敏二极管中观察到了慢瞬变现象，这可以用电子通过表面态的时间连续跃迁引起的色散输运来解释。这导致了一种新的AlGaN/GaN HEMT电流崩塌模型。(6)采用电解液/AlGaN栅极结构制备的pH敏感HEMT具有接近理想的能斯特响应。讨论了利用该结构实现生物传感器的相关问题。(7)针对传感器的片上集成，提出了一种基于六角形纳米线网络的BDD信息处理体系结构。该方案包括基本集成单元、传感器桥、传感器阵列结构、用于纳米线网络形成的选择性MBE方法以及与片上天线集成的无线通信电路等关键要素。他们的可行性已经得到了证明。较少