Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High Vacuum

超高真空非接触式无损电容电压测量系统的研制

• 批准号: 08555072
• 负责人: HASEGAWA Hideki
• 金额: $ 3.84万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555072/
• 关键词: contactless C-V; UHV-based system; surface state; interface state; Fermi level pinning; hydrogen-terminated surface; ultrathin insulator; ECR plasma; oxynitride film; 非接触C-V; 半導体自由表面; 極薄絶縁膜; トンネル絶縁膜; 原子スケール表面制御

The purpose if this rsearch is to develop the "Contactless and Non-Destructive Capacitance-Voltage (C-V) Measurement System" for characterization of a conduction type, an impurity profile and a surface state density distribution of semiconductor materials in ultra-high vacuum (UHV) environment and to study various types of semiconductor surfaces such as reconstructed surfaces, processed surfaces, surfaces covered with ultrathin insulating films, etc. The main results obtained are listed below :(1) The system consists of four parts as follows : (a) An UHV chamber with a sample transfer system and a pump system, (b) a field plate which can maintain a parallelism and a constant distance of 100-300nm from a sample surface by piezo-mechanism with a capacitance feedback, (c) a UHV gap measurement part based on the optical method utilizing change in reflectivity due to penetration of evanescent wave (the Goos-Haenchen effect) and (d) a controller including C-V meter. The base pressure of the … More chamber was within the range of 10^<-10> Torr. The resolutions of a measured capacitance of 0.2fF and a UHV gap distance of 1nm were achieved, respectively.(2) The validity of the system was checked by using a SiO_2/Si metal oxide semiconductor (MOS) system. The obtained contactless C-V curve was well in agreement with the calculated ideal C-V curve.(3) The hydrogen-terminated Si surfaces showed the Fermi level pinning phenomena due to a high density of discrete surface state lying at 0.6eV above the valence band.(4) It was found that the Si surfaces covered with ultrathin oxides formed by chemical and thermal processes at temperatures below 400ﾟC had high-density interface states with narrow U-shaped continuous distributions, resulting in the Fermi level pinning near the hybrid orbital charge neutrality level.(5)The oxynitrided Si surface by ECR N_2O plasma was found to be pinning free, showing a wide, U-shaped, continuous interface state distribution with a minimum value of 1.0_x10^<11> eV^<-1>cm^<-2>. The formation of phase-separated Si_3N_4/SiO_2 interfacial structure was responsible for realization of the pinning free interface.(6) Contactless C-V results directly showed strong surface Fermi level pinning at the molecular-beam-epitaxy (MBE) grown GaAs (001) (2x4) surfaces, and the observed pinning behavior cannot be explained by the "kink-acceptor model". Less

本研究的目的是开发“非接触式无损电容电压（C-V）测量系统”，用于表征半导体材料在超高真空（UHV）环境下的导电类型、杂质分布和表面态密度分布，并研究各种类型的半导体表面，如重构表面、加工表面、覆盖超薄绝缘膜的表面等。获得的主要结果如下：(1)系统由以下四部分组成：(a)带有样品传输系统和泵浦系统的特高压室，(b)通过电容反馈的压电机构与样品表面保持平行度和恒定距离100-300nm的场板，(c)基于光学方法的特高压间隙测量部分，利用倏逝波穿透的反射率变化（Goos-Haenchen效应），(d)包含c - v计的控制器。…More燃烧室的基压在10^<-10> Torr范围内。测量电容分辨率为0.2fF，特高压间隙距离为1nm。(2)采用SiO_2/Si金属氧化物半导体（MOS）体系验证了该系统的有效性。所得的无接触C-V曲线与计算的理想C-V曲线吻合较好。(3)由于在价带以上0.6eV处存在高密度的离散表面态，端氢Si表面呈现费米能级钉扎现象。(4)发现在400℃以下的温度下，化学和热过程形成的超薄氧化物覆盖的Si表面具有高密度的界面态，具有窄u型连续分布，导致费米能级钉住在杂化轨道电荷中性能级附近。(5) ECR N_2O等离子体氧化氮化Si表面无钉钉，界面态呈宽的u型连续分布，最小值为1.0_x10^<11> eV^<-1>cm^<-2>。Si_3N_4/SiO_2相分离界面结构的形成是实现无钉钉界面的主要原因。(6)非接触C-V结果直接表明，在分子束外延（MBE）生长的GaAs (001) （2x4）表面存在很强的表面费米水平钉钉，这种钉钉行为不能用“扭曲受体模型”来解释。少

项目成果

S.Kasai and H.Hasegawa et al.: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36

S.Kasai 和 H.Hasekawa 等人：“基于二维电子气肖特基面内栅极和包裹栅极控制的具有单点和多点的 GaAs 单电子器件的制造和表征”日本应用物理杂志

T.Kudoh, H.Okada, T.Hashizume and H.Hasegawa: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layr by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Sceince. 117/118. 342-34

T.Kudoh、H.Okada、T.Hashizume 和 H.Hasekawa：“通过原位电化学过程控制 2DEG 层金属-半导体界面的形成及其在面内门控电子波导器件中的应用”应用表面科学。

M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001) InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)

M.Araki：“在各种台面图案 (001) InP 衬底上通过选择性分子束外延生长制造 InGaAs 量子线和点”，《日本应用物理学杂志》。

H.Fujikura: "Formation of Two-Dimensional Arrays ofInP-Based InGaAs Quantum Dots on Pattemed Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)

H.Fujikura：“通过选择性分子束外延在图案化基板上形成基于 InP 的 InGaAs 量子点的二维阵列”，日本应用物理学杂志。

B.Adamowics, K.Ikeya H.Fujikura and H.Hasegawa: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Lay" Physica E. (in press). (1998)

B.Adamowics、K.Ikeya H.Fujikura 和 H.Hasekawa：“通过超薄硅界面控制层对暴露在空气中的 AlGaAs 表面和异位钝化进行光致发光表征”Physica E.（出版中）。