High Accuracy and High Speed Analog Integrated Circuit Using Metal Substrate SOI Structure

采用金属基板SOI结构的高精度、高速模拟集成电路

• 批准号: 11450117
• 负责人: KOTANI Koji
• 金额: $ 9.15万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450117/
• 关键词: SOI; Metal substrate; Analog integrated circuit; Kink effect; Operational amplifier; Gas-isolated interconnect; Bonded SOI wafer; Metal-gate MOS transistor; 金属ゲート電極

Operation mechanism of SOI devices has been analyzed by device simulation. It is revealed that low drain voltage operation, where high transconductance is achieved, is also effective for obtaining high drain resistance and therefore effective for realizing high performance amplifier since kink-effect due to impact ionization and punch-through effect can be prevented. Low voltage swing amplifier which effectively operates at low voltage bias has been designed. The amplifier has a high gain at low frequency region as well, while conventional amplifier exhibits the degradation of a gain at low frequency region. We have designed a high accuracy pipeline A/D converter utilizing low voltage swing amplifier.The best structure for interconnects in terms of accurate and rapid propagation of signals has been analyzed by electro-magnetic simulation based on Maxwell's equations. It is found that metal substrate structure instead of conventional Si substrate is very effective for minimizing signal … More attenuation and signal delay and 100ps pulse signal can propagate up to 2mm in length. If the interconnect width gets smaller than the skin depth which is determined by signal frequency, however, signal propagation characteristics are severely degraded by the resistance of the interconnect itself. Gas-isolated-interconnect structure is found to be very effective to prevent signal degradation.The difference of various types of SOI wafers has been experimentally verified in terms of the noise characteristics of MOD devices. It is found that the bonded SOI wafer having epitaxial SOI layer has the best SOI-BOX interface characteristics and is very effective for reducing uncertain noise and realizing high accuracy analog circuit applications.Process technologies to fabricate metal-gate MOS devices have been developed. It is found that highly reliable metal gate MOS devices can be realized by TaNx/Ta/TaNx stacked gate electrode structure formed by sputtering process utilizing newly developed high-density plasma. Less

通过器件仿真分析了SOI器件的工作机理。揭示了实现高跨导的低漏极电压操作对于获得高漏极电阻也是有效的，因此对于实现高性能放大器是有效的，因为可以防止由于碰撞电离和击穿效应引起的扭结效应。设计了可在低偏置电压下有效运行的低电压摆幅放大器。该放大器在低频区域也具有高增益，而传统放大器在低频区域表现出增益下降。我们利用低压摆幅放大器设计了一种高精度流水线A/D转换器。通过基于麦克斯韦方程组的电磁仿真分析了信号准确、快速传播方面的最佳互连结构。研究发现，金属衬底结构代替传统的硅衬底对于最小化信号衰减和信号延迟非常有效，并且100ps脉冲信号可以传播长达2mm的长度。然而，如果互连宽度变得小于由信号频率确定的趋肤深度，则互连本身的电阻会严重降低信号传播特性。气体隔离互连结构对于防止信号衰减非常有效。各种类型的SOI晶圆的差异在MOD器件的噪声特性方面已经得到实验验证。研究发现，具有外延SOI层的键合SOI晶圆具有最佳的SOI-BOX界面特性，对于降低不确定噪声和实现高精度模拟电路应用非常有效。金属栅MOS器件的制造工艺技术已得到发展。研究发现，利用新开发的高密度等离子体溅射工艺形成TaNx/Ta/TaNx堆叠栅电极结构，可以实现高可靠性金属栅MOS器件。较少的

项目成果

Takeo Ushiki: "Characterization of electrically active defects at SOI-BOX interface on high-dose SIMOX wafers"9th International Conference on Production Engineering. JSPE No.3. 567-572 (1999)

Takeo Ushiki：“高剂量 SIMOX 晶圆上 SOI-BOX 界面电活性缺陷的表征”第九届国际生产工程会议。

T.Ushiki,K.Kotani,T.Funaki,K.Kawai,and T.: "Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers"1999 IEEE International SOI Conference. 48-49 (1999)

T.Ushiki、K.Kotani、T.Funaki、K.Kawai 和 T.：“高剂量 SIMOX 晶圆中 SOI-BOX 界面处能量局域陷阱态的证据”1999 年 IEEE 国际 SOI 会议。

Takeo Ushiki, Kunihiro Kawai, Ichiro Ohshima, and Tadahiro Ohmi: "Chemical Reaction Concerns of Gate Metal with Gate Dielectric in Ta Gate MOS Devices : An Effect Of Self-Sealing Barrier Configuration Interposed Between Ta and SiO2"IEEE Trans.on Electron

Takeo Ushiki、Kunihiro Kawai、Ichiro Ohshima 和 Tadahiro Ohmi：“Ta 栅极 MOS 器件中栅极金属与栅极电介质的化学反应问题：Ta 和 SiO2 之间插入的自密封势垒配置的影响”IEEE Trans.on Electron

Tadahiro Ohmi, Shigetoshi Sugawa, Koji Kotani, Masaki Hirayama, Akihiro Morimoto: "New Paradigm of Silicon Technology"IEEE Proceedings. (Now Printing) Vol.89, No.3. (2001)

Tadahiro Ohmi、Shigetoshi Sukawa、Koji Kotani、Masaki Hirayama、Akihiro Morimoto：“硅技术的新范式”IEEE 论文集。

T.Ushiki,H.Ishino,and T.Ohmi: "Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating-Body SOI MOSFETs"IEEE Electron Device Letters. 21・12. 610-612 (2000)

T. Ushiki、H. Ishino 和 T. Ohmi：“启动 SOI 材料质量对部分耗尽浮体 SOI MOSFET 低频噪声特性的影响”IEEE 电子器件快报 21・12。