High Accuracy and High Speed Analog Integrated Circuit Using Metal Substrate SOI Structure

通过器件仿真分析了SOI器件的工作机理。结果表明，低漏极电压工作，实现高跨导，也有效地获得高漏极电阻，从而有效地实现高性能放大器，因为可以防止由冲击电离和穿孔效应引起的扭结效应。设计了一种在低电压偏置下有效工作的低电压摆幅放大器。该放大器在低频区也具有较高的增益，而传统放大器在低频区表现出增益的退化。利用低压摆幅放大器设计了一种高精度流水线a /D转换器。基于麦克斯韦方程组的电磁仿真分析了信号准确快速传播的最佳互连结构。研究发现，金属衬底结构代替传统的硅衬底结构，可以有效地减小信号的衰减和信号延迟，100ps的脉冲信号可以传播到2mm的长度。但是，如果互连线宽度小于由信号频率决定的趋肤深度，则互连线本身的电阻会严重降低信号的传播特性。气体隔离互连结构对防止信号退化非常有效。通过实验验证了不同类型SOI晶圆在MOD器件噪声特性方面的差异。结果表明，具有外延SOI层的键合SOI晶圆具有最佳的SOI- box接口特性，对于降低不确定噪声和实现高精度模拟电路应用非常有效。制备金属栅MOS器件的工艺技术已经得到了发展。发现利用新开发的高密度等离子体溅射形成TaNx/Ta/TaNx堆叠栅电极结构，可以实现高可靠性的金属栅MOS器件。少

Operation mechanism of SOI devices has been analyzed by device simulation. It is revealed that low drain voltage operation, where high transconductance is achieved, is also effective for obtaining high drain resistance and therefore effective for realizing high performance amplifier since kink-effect due to impact ionization and punch-through effect can be prevented. Low voltage swing amplifier which effectively operates at low voltage bias has been designed. The amplifier has a high gain at low frequency region as well, while conventional amplifier exhibits the degradation of a gain at low frequency region. We have designed a high accuracy pipeline A/D converter utilizing low voltage swing amplifier.The best structure for interconnects in terms of accurate and rapid propagation of signals has been analyzed by electro-magnetic simulation based on Maxwell's equations. It is found that metal substrate structure instead of conventional Si substrate is very effective for minimizing signal … More attenuation and signal delay and 100ps pulse signal can propagate up to 2mm in length. If the interconnect width gets smaller than the skin depth which is determined by signal frequency, however, signal propagation characteristics are severely degraded by the resistance of the interconnect itself. Gas-isolated-interconnect structure is found to be very effective to prevent signal degradation.The difference of various types of SOI wafers has been experimentally verified in terms of the noise characteristics of MOD devices. It is found that the bonded SOI wafer having epitaxial SOI layer has the best SOI-BOX interface characteristics and is very effective for reducing uncertain noise and realizing high accuracy analog circuit applications.Process technologies to fabricate metal-gate MOS devices have been developed. It is found that highly reliable metal gate MOS devices can be realized by TaNx/Ta/TaNx stacked gate electrode structure formed by sputtering process utilizing newly developed high-density plasma. Less