Green LSI Technology Using High-Performance TFT Fabricated by Area-Selective Processing

采用区域选择性处理制造的高性能 TFT 的绿色 LSI 技术

• 批准号: 23360144
• 负责人: KOTANI Koji
• 金额: $ 11.07万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360144/
• 关键词: 薄膜トランジスタ; 半導体プロセス; レーザーアニール; センサーネットワーク; 領域選択プロセッシング

Poly-Si thin films with large crystal grains were formed by continuous-wave laser lateral crystallization with Gaussian laser spot. Strain effects on electron mobility were investigated with tri-gate poly-Si TFTs. Highly bi-axially oriented poly-Si thin films with very long grains were successfully formed by double-line beam continuous wave laser crystallization. High performance TFTs with this well-crystal oriented poly-Si thin films were also fabricated.As one example of principal elemental circuit of "Green LSI" with advanced TFT technology, a photovoltaic (PV)-assisted high-frequency rectifier has been fabricated with bulk CMOS technology and its performance has been evaluated. It has been found that the TFT technology, which uses a transparent dielectric substrate, has superiority in hybrid integration of PV technology.

采用高斯激光光斑进行连续波激光横向晶化，形成大晶粒的多晶硅薄膜。使用三栅极多晶硅 TFT 研究了应变对电子迁移率的影响。通过双线束连续波激光晶化成功形成了具有超长晶粒的高度双轴取向多晶硅薄膜。还制作了采用这种良好晶体取向的多晶硅薄膜的高性能TFT。作为采用先进TFT技术的“绿色LSI”主要元件电路的一个例子，采用体CMOS技术制作了光伏（PV）辅助高频整流器，并对其性能进行了评估。研究发现，采用透明介质基板的TFT技术在光伏技术混合集成方面具有优势。

项目成果

DLB-CLC poly-Si結晶化におけるレーザ照射オーバラップの効果

激光照射重叠对DLB-CLC多晶硅结晶的影响

• 发表时间: 2013
• 作者: 山野 真幸，黒木 伸一郎，佐藤 旦，秦 信宏;小谷光司;吉川公麿
• 通讯作者: 吉川公麿

Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams

• DOI: 10.1149/1.3610410
• 发表时间: 2011-01-01
• 期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
• 影响因子: 3.9
• 作者: Kuroki, Shin-Ichiro;Kawasaki, Yuya;Ito, Takashi
• 通讯作者: Ito, Takashi

High performance Poly-Si TFTs with Highly Bi-axially Oriented Poly-Si Thin Films Using DLB Continuous-wave Laser Lateral Crystallization

使用 DLB 连续波激光横向结晶的具有高度双轴取向多晶硅薄膜的高性能多晶硅 TFT

• 发表时间: 2014
• 期刊: Jpn. J. Appl. Phys.
• 作者: Masayuki Yamano;Shin-Ichiro Kuroki;Tadashi Sato and Koji Kotani
• 通讯作者: Tadashi Sato and Koji Kotani

Tri-Gate Polycrystalline Silicon Thin Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization for Improvement of Electron Transport Properties

通过连续波激光横向结晶制造三栅多晶硅薄膜晶体管以改善电子传输性能

• DOI: 10.1143/jjap.51.02bj03
• 发表时间: 2012
• 期刊: Jpn. J. Appl. Phys.
• 作者: 増崎裕季;廣瀬雄一;田付強;大木義路;望月敏光;Mutsunori Uenuma;斎木敏治;寺田教男;Shuntaro Fujii
• 通讯作者: Shuntaro Fujii

Carrier transport and its variation of laser-lateral-crystallized poly-Si TFTs

激光横向晶化多晶硅TFT的载流子输运及其变化

• DOI: 10.1049/el.2011.2854
• 发表时间: 2011
• 期刊: Electronics Letters
• 影响因子: 1.1
• 作者: 平敬;本間貴士;内山貴之;斎木敏治;S.Kuroki
• 通讯作者: S.Kuroki