Reduction of threading dislocations in group III nitride grown by vapor phase epitaxy and in-situ monitoring of the grown-in stress
通过气相外延生长的 III 族氮化物中的螺纹位错的减少和生长应力的原位监测
基本信息
- 批准号:11450131
- 负责人:
- 金额:$ 8.7万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B).
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2000
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Although high yield growth technology of group III nitrides on sapphire using low temperature deposited buffer layer which had been established by us in 1986 brought about the bright blue and green light emitting diodes and violet laser diodes, it still has the problem of high density threading dislocations.In order to reduce threading dislocations in the group III nitride films, we intentionally applied horizontal biaxial stress during growth, thereby bend the threading dislocations. Intentional stress was applied by forming trench structure, by which growth plane was inclined from the c-axis direction. Self induced stress field around dislocations causes inductive force along growth plane, thereby almost all types of dislocations including pure-screw, pure-edge, and mixed type dislocations are bent. This mechanism can be applied not only in case of GaN but also applicable to AlGaN.Low dislocation density AlGaN has been achieved for the first time.In this study, we also established the in-situ stress monitoring system, by which we can precisely determined the critical thickness for crack formation. We also found the impurity hardening effect in nitrides for the first time.
我们于1986年建立的低温沉积缓冲层法在蓝宝石衬底上生长III族氮化物薄膜的高产率生长技术虽然带来了明亮的蓝、绿色发光二极管和紫色激光二极管,但仍然存在高密度的穿透位错问题,为了减少III族氮化物薄膜中的穿透位错,我们在生长过程中有意施加水平双轴应力,从而使穿透位错弯曲。通过形成沟槽结构来施加有意应力,通过该沟槽结构,生长平面从c轴方向倾斜。位错周围的自感应力场在位错生长面上产生沿着方向的诱导力,从而使几乎所有类型的位错(包括纯螺型、纯刃型和混合型位错)发生弯曲。该机制不仅适用于GaN,也适用于AlGaN,首次实现了AlGaN的低位错密度。在本研究中,我们还建立了原位应力监测系统,通过该系统可以精确地确定裂纹形成的临界厚度。我们还首次在氮化物中发现了杂质硬化效应。
项目成果
期刊论文数量(233)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M.Kariya,S.Nitta,M.Kosaki,Y.Yukawa,S.Yamaguchi,H.Amano,I.Akasaki: "Effect on GaN/A1__<0.17>Ga__<0.83>N and A1__<0.05>Ga__<0.95>N/A1__<0.17>Ga__<0.83>N quantum wells by isoelectronic In-doping during metalorganic vapor phase epitaxy"Japanese Journal of App
M.Kariya、S.Nitta、M.Kosaki、Y.Yukawa、S.Yamaguchi、H.Amano、I.Akasaki:“对 GaN/A1__<0.17>Ga__<0.83>N 和 A1__<0.05>Ga__<0.95 的影响
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Leters. 76. 3388-3390 (2000)
G.Pozina、J.P.Bergman、B.Monemar、S Yamaguchi H.Amano、I.Akasaki:“使用铟表面活性剂通过金属有机气相外延生长的 GaN 的光谱”应用物理快报。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPB-grown GaN and (Al, Ga) N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)
S.Yamaguchi、M.Kariya、S.Nitta、T.Kashima、M.Kosaki、Y.Yukawa、H.Amano、I.Akasaki:“MOVPB 生长的 GaN 和 (Al, Ga) N 的晶体质量控制/
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Kashima, R.Nakamura, M.Iwaya, H.Katoh, S.Yamaguchi, H.Amano, I.Akasaki: "Microscopic investigation of Al_<0.43>Ga_<0.57>N on sapphire"Japanese Journal of Applied Physics. 38. L1518 (1999)
T.Kashima、R.Nakamura、M.Iwaya、H.Katoh、S.Yamaguchi、H.Amano、I.Akasaki:“蓝宝石上 Al_<0.43>Ga_<0.57>N 的显微研究”日本应用物理学杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
C.Wetzel, H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)
C.Wetzel、H.Amano 和 I.Akasaki:“GaInN/GaN 异质结构中的压电极化和器件设计的一些后果”Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
AMANO Hiroshi其他文献
AMANO Hiroshi的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('AMANO Hiroshi', 18)}}的其他基金
Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices
高偏振半导体物理及其在深紫外发光器件中的应用
- 批准号:
25000011 - 财政年份:2013
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Specially Promoted Research
Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy
使用脉冲调制等离子体辅助分子束外延生长高质量 InGaN 基超晶格
- 批准号:
23656015 - 财政年份:2011
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Growth of high-quality thick InGaN by raised-pressure MOVPE
通过升压 MOVPE 生长高质量厚 InGaN
- 批准号:
22246004 - 财政年份:2010
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Establishment of the farmer support system in use of natural enemies of pests by development of the simple growth chamber
通过开发简易生长室建立利用害虫天敌的农民支持系统
- 批准号:
21580062 - 财政年份:2009
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
High-Efficiency Nitride-based Power Devices in the Next Generation
下一代高效氮化物功率器件
- 批准号:
18206036 - 财政年份:2006
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Establishment of management program of spider mite control on fruit trees by practical introduction of native phytoseiid mites
实际引进本土植绥螨建立果树红蜘蛛防治管理方案
- 批准号:
17380034 - 财政年份:2005
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Defect reduction of super widegap semiconductor AlN by high temperature metalorganic vapor phase epitaxy and device applications
高温有机金属气相外延减少超宽禁带半导体AlN缺陷及器件应用
- 批准号:
15206003 - 财政年份:2003
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Studies on biological control of spider mites by introduction and utilization of native phytoseiid mites.
引入并利用本土植绥螨对红蜘蛛的生物防治研究。
- 批准号:
14360026 - 财政年份:2002
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Studies on species structure and abundance of native phytoseiid mites and their use as biocontrol agents
本土植绥螨的物种结构和丰度及其作为生物防治剂的研究
- 批准号:
11660043 - 财政年份:1999
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study on the fabrication and properties of low dimensional structure based on group III nitride semiconductors on GaN substrates
GaN衬底上III族氮化物半导体低维结构的制备及性能研究
- 批准号:
07650025 - 财政年份:1995
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
相似海外基金
Basic Researches on Active Optical Resonators of Multi-Quantum-Well Structure to be Used for Direct Microwave Modulation
用于直接微波调制的多量子阱结构有源光谐振器的基础研究
- 批准号:
60460138 - 财政年份:1985
- 资助金额:
$ 8.7万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)