Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy

采用等离子体辅助分子束外延的方法制备了高In含量的InGaN厚层和InGaN纳米线。研究发现，InGaN/GaN超晶格结构是实现低缺陷密度、高in含量InGaN的有效方法。InGaN纳米线的发光强度受基底层错密度的强烈影响。在高生长温度和高In通量比条件下生长高In含量InGaN纳米线可以降低层错密度。

Growth of high In content thick InGaN layers and InGaN nanowires were conducted by plasma assisted molecular beam epitaxy. InGaN/GaN superlattice structures are found to be very effective to realize low-defect-density high-In-content InGaN. PL intensity of InGaN nanowires is strongly affected by the density of basal stacking faults. It is possible to reduce stacking fault density by growing high In content InGaN nanowires at high growth temperature and high In flux ratio.