Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy

使用脉冲调制等离子体辅助分子束外延生长高质量 InGaN 基超晶格

• 批准号: 23656015
• 负责人: AMANO Hiroshi
• 金额: $ 2.66万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 无数据
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656015/
• 关键词: PAMBE; InGaN; 窒素ラジカル; LED; 太陽電池; PA MBE; 超格子; ナノワイヤ; 内部量子効率

Growth of high In content thick InGaN layers and InGaN nanowires were conducted by plasma assisted molecular beam epitaxy. InGaN/GaN superlattice structures are found to be very effective to realize low-defect-density high-In-content InGaN. PL intensity of InGaN nanowires is strongly affected by the density of basal stacking faults. It is possible to reduce stacking fault density by growing high In content InGaN nanowires at high growth temperature and high In flux ratio.

采用等离子体辅助分子束外延技术生长了高In含量的InGaN厚层和InGaN纳米线。InGaN/GaN超晶格结构是实现低缺陷密度高In含量InGaN的有效方法。InGaN纳米线的PL强度受基底层错密度的强烈影响。在高生长温度和高In通量比下生长高In含量的InGaN纳米线可以降低层错密度。

项目成果

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy

分子束外延生长的 InGaN 外延层自发形成高度规则的超晶格结构

• DOI: 10.1063/1.3574607
• 发表时间: 2011-04
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Wu, Z. H.;Kawai, Y.;Fang, Y. -Y.;Chen, C. Q.;Kondo, H.;Hori, M.;Honda, Y.;Yamaguchi, M.;Amano, H.
• 通讯作者: Amano, H.