Study on the fabrication and properties of low dimensional structure based on group III nitride semiconductors on GaN substrates

GaN衬底上III族氮化物半导体低维结构的制备及性能研究

• 批准号: 07650025
• 负责人: AMANO Hiroshi
• 金额: $ 1.54万
• 依托单位: MEIJO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650025/
• 关键词: Group III nitride semiconductors; Low dimensional structure; Homoepitaxy; OMVPE; MBE; HVPE; Bulk GaN; GaN基板; 量子井戸構造; Laser Diode; Light Emittting Diode

In this study, fabrication and properties of low dimensional structure based on group III nitride semiconductors on GaN substrate has been investigated experimentally. The following results have been obtained.(1) Growth of thick GaN on sapphire by HVPE/OMVPE-hybrid epitaxyFirst, GaN about 1mum thick was grown on the sapphire substrate by OMVPE using low temperature deposited GaN buffer layr. Then, thick GaN was reproducibly grown by HVPE on the OMVPE-grown GaN.(2) Crystalline quality of alloys on GaN have been characterized by reciprocal space mapping of the X-ray diffraction around asymmetrical diffraction spot. Both GaInN and AlGaN can be grown coherently on the underlying GaN layr. Internal quantum confined Stark effect has been observed for the first time.

在本研究中，对基于 GaN 衬底上的 III 族氮化物半导体的低维结构的制造和性能进行了实验研究。得到了以下结果：(1)HVPE/OMVPE混合外延在蓝宝石上生长厚GaN首先，采用低温沉积GaN缓冲层，通过OMVPE在蓝宝石衬底上生长约1μm厚的GaN。然后，通过HVPE在OMVPE生长的GaN上可重复生长厚GaN。(2)通过围绕不对称衍射点的X射线衍射的倒易空间映射来表征GaN上合金的晶体质量。 GaInN 和 AlGaN 都可以在下面的 GaN 层上连贯生长。首次观察到内量子限制斯塔克效应。

项目成果

M.Koike, S.Yamasaki, S.Nagai, N.Koide, S.Asami, H.Amano and I.Akasaki: "High-quality GaInN/GaN multiple quantum wells" Applied Physics Letter. 68. 1403-1405 (1996)

M.Koike、S.Yamasaki、S.Nagai、N.Koide、S.Asami、H.Amano 和 I.Akasaki：“高质量 GaInN/GaN 多量子阱”应用物理快报。

I.Akasaki and H.Amano: "Semiconductors and Semimetals" Academic Press (in Press), (1997)

I.Akasaki 和 H.Amano：《半导体和半金属》学术出版社（正在出版），（1997 年）

H.Sakai, H.Amano, I.Akasaki: "窒化ガリウム系III族窒化物半導体のヘテロエピタキシ-" 日本結晶成長学会誌. 23. 338-344 (1996)

H.Sakai、H.Amano、I.Akasaki：“氮化镓基 III 族氮化物半导体的异质外延”日本晶体生长学会杂志 23. 338-344 (1996)。

S.Sota, H.Sakai, T.Tanaka, M.Koike, I.Akasaki and H.Amano: "Shortest wavelength semiconductor laser diode" Electronics Letters. 32. 1105-1106 (1996)

S.Sota、H.Sakai、T.Tanaka、M.Koike、I.Akasaki 和 H.Amano：“最短波长半导体激光二极管”电子通讯。

C.Wetzel, E.E.Haller, H.Amano and I.Akasaki: "Infrared reflection on GaN and AlGaN thin film heterostructures with AIN buffer layrs" Applied Physics Letters. 68. 2547-2549 (1996)

C.Wetzel、E.E.Haller、H.Amano 和 I.Akasaki：“具有 AIN 缓冲层的 GaN 和 AlGaN 薄膜异质结构上的红外反射”应用物理快报。