Study on the fabrication and properties of low dimensional structure based on group III nitride semiconductors on GaN substrates

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In this study, fabrication and properties of low dimensional structure based on group III nitride semiconductors on GaN substrate has been investigated experimentally. The following results have been obtained.(1) Growth of thick GaN on sapphire by HVPE/OMVPE-hybrid epitaxyFirst, GaN about 1mum thick was grown on the sapphire substrate by OMVPE using low temperature deposited GaN buffer layr. Then, thick GaN was reproducibly grown by HVPE on the OMVPE-grown GaN.(2) Crystalline quality of alloys on GaN have been characterized by reciprocal space mapping of the X-ray diffraction around asymmetrical diffraction spot. Both GaInN and AlGaN can be grown coherently on the underlying GaN layr. Internal quantum confined Stark effect has been observed for the first time.