Defect reduction of super widegap semiconductor AlN by high temperature metalorganic vapor phase epitaxy and device applications

高温有机金属气相外延减少超宽禁带半导体AlN缺陷及器件应用

• 批准号: 15206003
• 负责人: AMANO Hiroshi
• 金额: $ 30.62万
• 依托单位: Meijo University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206003/
• 关键词: AlN; UV Laser Diode; UV Light Emitting_Diode; Epitaxial Lateral Overgrowth; Sapphire; UV photo Diode; High temperature MOVPE; AlN; 紫外レーザダイオード; ホモエピタキシャル成長

Blue, green and white light emitting diodes and violet laser diodes on sapphire substrates have been already commercialized which are based on the low temperature buffer layer technology developed by us. Applications of nitride semiconductors are not limited to visible range, but can be applied to ultraviolet range. Expected applications of solid state UV/DUV light emitters/detectors include sterilizer, DNA analyzer, laser knife, flame sensor, dermatology, molecular tweezers, weather observation, gas decomposition, photolithography, etc. Formerly, AlN was grown at or lower than 1,200□ on other materials such as sapphire or SiC. Our previous mass transport study showed that in order to achieve sufficient migration of Al precursor, AlN should be grown higher than 1,200□.The objective of this study is as follows ;(1)Growth of AlN substrate by sublimation(2)Growth of AlN on sapphire by metalorganic vapor phase epitaxy (MOVPE) at high temperature, and(3)Fabrication of high quality AlGaN-based quantum structure and UV emitting deviceIn 2003, custom designed MOVPE reactor which is capable of raising temperature as high as 1,800□ was installed and operated with the cooperation of Ibiden Co.,Ltd. Sublimation growth of AlN on SiC and spontaneous nucleation was performed. In 2004, world's shortest wavelength laser diode on sapphire was successfully fabricated on epitaxially lateral overgrown (ELO) low dislocation density AlGaN. High quality and thick AlN was grown on sapphire by high temperature MOVPE. In 2005, we successfully grow low dislocation density AlN on sapphire using ELO technique with a dislocation density as low as 10^7cm^<-2> or less.

基于我们开发的低温缓冲层技术的蓝宝石衬底上的蓝色、绿色和白色发光二极管和紫色激光二极管已经商业化。氮化物半导体的应用不仅限于可见光范围，还可以应用于紫外范围。固态UV/DUV光发射器/检测器的预期应用包括灭菌器、DNA分析仪、激光刀、火焰传感器、皮肤科、分子镊子、气象观测、气体分解、光刻等。以前，AlN是在蓝宝石或SiC等其他材料上在1,200℃或以下生长。我们之前的传质研究表明，为了实现Al前驱体的充分迁移，AlN的生长温度应高于1,200℃。本研究的目标如下：（1）升华生长AlN衬底（2）高温下通过金属有机气相外延（MOVPE）在蓝宝石上生长AlN，以及（3）制备高质量AlGaN基量子结构和紫外发射器件 2003年，与Ibiden有限公司合作，安装并运行了定制设计的可升温至1,800℃的MOVPE反应器。进行 AlN 在 SiC 上的升华生长和自发成核。 2004年，世界上最短波长的蓝宝石激光二极管在外延横向生长（ELO）低位错密度AlGaN上成功制造。通过高温 MOVPE 在蓝宝石上生长出高质量、厚的 AlN。 2005年，我们利用ELO技术在蓝宝石上成功生长了低位错密度AlN，位错密度低至10^7cm^-2>以下。

项目成果

E.Valcheva, T.Paskova, G.Z.Radnoczi, L.Hultman, B.Monemar, H.Amano, I.Akasaki: "Growth-induced defects in AlN/GaN superlattices with different periods"PHYSICA B. 340-342. 1129-1132 (2003)

E.Valcheva、T.Paskova、G.Z.Radnoczi、L.Hultman、B.Monemar、H.Amano、I.Akasaki：“不同周期的 AlN/GaN 超晶格中的生长诱导缺陷”PHYSICA B. 340-342。

H.Amano, S.Takanami, M.Iwaya, S.Kamiyama, I.Akasaki: "Group-III Nitride-Based UV-Light Emitting Devices"Phys.Stat.Sol.(a). 195. 491-495 (2003)

H.Amano、S.Takanami、M.Iwaya、S.Kamiyama、I.Akasaki：“III 族氮化物基紫外发光器件”Phys.Stat.Sol.(a)。

Growth of high-quality AlN with high growth rate by high-temperature MOVPE

利用高温MOVPE高生长率生长高质量AlN

• 发表时间: 2006
• 期刊: Physica.Status Solidi (c) 3
• 作者: N.Fujimoto;T.Kitano;G.Narita;N.Okada;K.Balakrishnan;M.Iwaya;S.Kamiyama;H.Amano;I.Akasaki;K.Shimono;T.Noro;T.Takagi;A.Bandoh
• 通讯作者: A.Bandoh

窒化物系化合物半導体の製造方法

氮化物基化合物半导体的制造方法

• 发表时间: 2005

High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure

具有蛾眼结构的高效氮化物基发光二极管

• 发表时间: 2005
• 期刊: Japanese Journal of Applied Physics 44,No.10
• 作者: H.Kasugai;Y.Miyake;A.Honshio;S.Mishima;T.Kawashima;K.Iida;M.Iwaya;S.Kamiyama;H.Amano;I.Akasaki;H.Kinoshita;H.Shiomi
• 通讯作者: H.Shiomi