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Establishment of coating technology of superhard carbon nitrides films based on the measurement of the surface reaction probabilities.

基于表面反应概率测量的超硬氮化碳薄膜涂层技术的建立

基本信息

批准号：
13555197
负责人：
ITO Haruhiko
金额：
$ 7.1万
依托单位：
Nagaoka University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2004
项目状态：
已结题

项目摘要

Mechanically hard amorphous carbon nitride (α-CN_x) films were prepared by applying a combination of the RF bias voltage to the substrate and the chemical vapor deposition process using the decomposition reaction of BrCN with the microwave discharge flow of Ar. In order to obtain the mechanical hardness, following two experiments were made.[1]The first was the deposition with suppressing temperature rise of the substrate during the application of the RF bias voltage by circulating cooling water inside the substrate stage. When the substrate was cooled, the maximum hardness of the film was 17.5 GPa under the condition of -V_<RF>=30 V, being 【approximately equal】2 times higher than that prepared without cooling. From the IR spectra of the films, three-dimensional C-N network structure was observed. This result suggested that the substrate cooling is effective for maintaining the sp^3-hybridized bonding in the films and, consequently, for suppressing the relaxation of the internal stress of the film.[2]The second experiment was the pursed operation of the RF bias voltage in the range of -V_<RF>=40-100 V. Film formation became possible in this high -V_<RF> region by this operation, although films were not formed due to severe sputtering when this voltage was applied continuously. As a result of measurement of the microhardness, it was in the case that t_<on>/t_<off>【greater than or equal】7/3 to exceed maximum hardness, 17.5 GPa, obtained by applying continuous RF bias. Hardness of the films formed under the condition of T=1000 s was higher than that formed under T=100 s. The maximum hardness of the film was 46.1 GPa, being obtained under the condition of T=1000 s, -V_<RF>=100 V, and t_<on>/t_<off>=8/2. Under the condition of t_<on>/t_<off>=9/1, the films were not deposited. Therefore, the optimum condition of t_<on>/t_<off> lies between 8/2 and 9/1

采用射频偏置电压和化学气相沉积相结合的方法，利用BrCN与氩气的微波放电流进行分解反应，制备了具有机械硬度的非晶态氮化碳（α-CN_x）薄膜。为了获得机械硬度，进行了两次实验。第一个是在施加射频偏置电压期间，通过在衬底阶段内循环冷却水抑制衬底温升的沉积。当衬底冷却后，在-V_<RF>=30 V条件下，薄膜的最大硬度为17.5 GPa，比未冷却制备的薄膜高【约等于】2倍。从红外光谱中观察到三维碳氮网络结构。这一结果表明，衬底冷却可以有效地维持薄膜中的sp^3杂化键，从而抑制薄膜内应力的松弛。第二个实验是RF偏置电压在-V_<RF>=40-100 V范围内的脉冲运算。通过这种操作，在高v_ <RF>区域形成薄膜成为可能，尽管当连续施加该电压时，由于严重的溅射而没有形成薄膜。显微硬度测量结果表明，在t_<on>/t_<off>【大于等于】7/3的情况下，超过施加连续RF偏置获得的最大硬度17.5 GPa。在T=1000 s下形成的膜的硬度高于在T=100 s下形成的膜。在T=1000 s, -V_<RF>=100 V, t_<on>/t_<off>=8/2的条件下，膜的最大硬度为46.1 GPa。当t_<on>/t_<off>=9/1时，薄膜未沉积。因此，t_<on>/t_<off>的最佳条件介于8/2和9/1之间