Establishment of coating technology of superhard carbon nitrides films based on the measurement of the surface reaction probabilities.
基于表面反应概率测量的超硬氮化碳薄膜涂层技术的建立
基本信息
- 批准号:13555197
- 负责人:
- 金额:$ 7.1万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Mechanically hard amorphous carbon nitride (α-CN_x) films were prepared by applying a combination of the RF bias voltage to the substrate and the chemical vapor deposition process using the decomposition reaction of BrCN with the microwave discharge flow of Ar. In order to obtain the mechanical hardness, following two experiments were made.[1]The first was the deposition with suppressing temperature rise of the substrate during the application of the RF bias voltage by circulating cooling water inside the substrate stage. When the substrate was cooled, the maximum hardness of the film was 17.5 GPa under the condition of -V_<RF>=30 V, being 【approximately equal】2 times higher than that prepared without cooling. From the IR spectra of the films, three-dimensional C-N network structure was observed. This result suggested that the substrate cooling is effective for maintaining the sp^3-hybridized bonding in the films and, consequently, for suppressing the relaxation of the internal stress of the film.[2]The second experiment was the pursed operation of the RF bias voltage in the range of -V_<RF>=40-100 V. Film formation became possible in this high -V_<RF> region by this operation, although films were not formed due to severe sputtering when this voltage was applied continuously. As a result of measurement of the microhardness, it was in the case that t_<on>/t_<off>【greater than or equal】7/3 to exceed maximum hardness, 17.5 GPa, obtained by applying continuous RF bias. Hardness of the films formed under the condition of T=1000 s was higher than that formed under T=100 s. The maximum hardness of the film was 46.1 GPa, being obtained under the condition of T=1000 s, -V_<RF>=100 V, and t_<on>/t_<off>=8/2. Under the condition of t_<on>/t_<off>=9/1, the films were not deposited. Therefore, the optimum condition of t_<on>/t_<off> lies between 8/2 and 9/1
采用射频偏压和化学气相沉积相结合的方法,在Ar的微波放电下,利用BrCN的分解反应,制备了机械硬质非晶氮化碳(α-CNx)薄膜。为了获得机械硬度,进行了以下两个实验:(1)在基片段内循环冷却水施加射频偏置电压的情况下抑制基片温升的沉积;在-V<;Rf>;=30V的条件下,当基片冷却时,薄膜的最大硬度为17.5 Gpa,约为未冷却时的2倍。从薄膜的红外光谱中观察到了三维的C-N网络结构。这一结果表明,衬底冷却有效地维持了薄膜中的sp3杂化键合,从而抑制了薄膜的内应力松弛。[2]第二个实验是在-V_<;rf>;=40-100V范围内的射频偏置电压的加压操作。通过这个操作,在这个高V_<;rf>;区域内可以形成薄膜,尽管当连续施加该电压时由于严重的溅射而没有形成薄膜。作为显微硬度测量的结果,在t_<;on>;/t_<;off>;[大于或等于]7/3的情况下,超过通过施加连续RF偏置获得的最大硬度17.5 Gpa。在T=1000 S条件下形成的薄膜的硬度高于在T=100 S条件下形成的薄膜的硬度,在T=1000 S,-V_<;Rf>;=100V,t_<;on>;/t_<;off>;=8/2的条件下,薄膜的最大硬度达到46.1 GPa.当t_<;on>;/t_<;off>;=9/1时,薄膜没有沉积.因此,开/关的最佳状态介于8/2和9/1之间
项目成果
期刊论文数量(62)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Absolute Density of the CN(X^2Σ^+), v=0 Level Produced by the Dissociative ExcItotion Reaction of BrCN with the Microwave Discharge Flow of Ar
BrCN与微波放电流Ar的解离激发反应产生的CN的绝对密度(X^2Σ^+),v=0能级
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:H.Ito;S.Ichimura;K.C.Namiki;H.Saitoh
- 通讯作者:H.Saitoh
伊藤治彦, 佐藤 陽, 齋藤秀俊: "Threshold Ionization Mass Spectrometry of BrCN. Gas-Phase Reaction Channels Which Determine the Nitrogen Contents in the Amorphous Carbon Nitride Films"Japanese Journal of Applied Physics. 41巻・8号. 5449-5450 (2002)
Haruhiko Ito、Yo Sato、Hidetoshi Saito:“BrCN 的阈值电离质谱。确定非晶氮化碳薄膜中氮含量的气相反应通道”《日本应用物理学杂志》第 41 卷,第 8 期。5449-5450( 2002)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
The Electronic Transition Moment Function for the B3Π–X3Δ System of TiO
TiO B3Π–X3Δ体系的电子跃迁矩函数
- DOI:10.1006/jmsp.2002.8586
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:K. Namiki;Haruhiko Ito
- 通讯作者:Haruhiko Ito
伊藤治彦, 田中一宏, 佐藤陽, 伊藤典子, 齋藤秀俊: "Ion-Induced Processes in the Dissociative Excitation Reaction of BrCN to Synthesize Mechanically Hard Amorphous Carbon Nitride Films in the Microwave Plasma Chemical Vapor Depsition System"Japanese Journal of Applied Physics.
Haruhiko Ito、Kazuhiro Tanaka、Yo Sato、Noriko Ito、Hidetoshi Saito:“微波等离子体化学气相沉积系统中 BrCN 解离激发反应中的离子诱导过程合成机械硬质非晶氮化碳薄膜”日本应用物理学杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Formation of amorphous-CN thin films by the deposition of CN radicals -Absolute density of gas-phase CN
CN自由基沉积形成非晶CN薄膜-气相CN的绝对密度
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:H.Ito;H.Saitoh
- 通讯作者:H.Saitoh
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ITO Haruhiko其他文献
ITO Haruhiko的其他文献
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{{ truncateString('ITO Haruhiko', 18)}}的其他基金
Elucidation of Mechanism of Film Hardening of Amorphous CarbonsBased on the High-Resolution Laser Spectroscopy
基于高分辨率激光光谱阐明非晶碳膜硬化机理
- 批准号:
22560020 - 财政年份:2010
- 资助金额:
$ 7.1万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Dynamics of formation of ultra-hard thin films of amorphous carbon nitride by energy-controlled ion bombardment
能量控制离子轰击非晶氮化碳超硬薄膜形成动力学
- 批准号:
19560699 - 财政年份:2007
- 资助金额:
$ 7.1万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Control of hydrogen content in the carbon nitride materials and its development to the field emission devices based on the high-resolution laser spectroscopy
氮化碳材料中氢含量的控制及其基于高分辨率激光光谱的场发射器件的开发
- 批准号:
14550721 - 财政年份:2002
- 资助金额:
$ 7.1万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Establishment of the principle of the synthesis of the super-hard carbon nitride films based on the diagnosis by the threshold ionization mass spectrometry
基于阈值电离质谱诊断的超硬氮化碳薄膜合成原理的建立
- 批准号:
11650760 - 财政年份:1999
- 资助金额:
$ 7.1万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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