Establishment of coating technology of superhard carbon nitrides films based on the measurement of the surface reaction probabilities.
Establishment of coating technology of superhard carbon nitrides films based on the measurement of the surface reaction probabilities.
批准号:
13555197
负责人:
ITO Haruhiko
金额:
$7.1万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2004
中文摘要
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英文摘要
Mechanically hard amorphous carbon nitride (α-CN_x) films were prepared by applying a combination of the RF bias voltage to the substrate and the chemical vapor deposition process using the decomposition reaction of BrCN with the microwave discharge flow of Ar. In order to obtain the mechanical hardness, following two experiments were made.[1]The first was the deposition with suppressing temperature rise of the substrate during the application of the RF bias voltage by circulating cooling water inside the substrate stage. When the substrate was cooled, the maximum hardness of the film was 17.5 GPa under the condition of -V_<RF>=30 V, being 【approximately equal】2 times higher than that prepared without cooling. From the IR spectra of the films, three-dimensional C-N network structure was observed. This result suggested that the substrate cooling is effective for maintaining the sp^3-hybridized bonding in the films and, consequently, for suppressing the relaxation of the internal stress of the film.[2]The second experiment was the pursed operation of the RF bias voltage in the range of -V_<RF>=40-100 V. Film formation became possible in this high -V_<RF> region by this operation, although films were not formed due to severe sputtering when this voltage was applied continuously. As a result of measurement of the microhardness, it was in the case that t_<on>/t_<off>【greater than or equal】7/3 to exceed maximum hardness, 17.5 GPa, obtained by applying continuous RF bias. Hardness of the films formed under the condition of T=1000 s was higher than that formed under T=100 s. The maximum hardness of the film was 46.1 GPa, being obtained under the condition of T=1000 s, -V_<RF>=100 V, and t_<on>/t_<off>=8/2. Under the condition of t_<on>/t_<off>=9/1, the films were not deposited. Therefore, the optimum condition of t_<on>/t_<off> lies between 8/2 and 9/1
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Absolute Density of the CN(X^2Σ^+), v=0 Level Produced by the Dissociative ExcItotion Reaction of BrCN with the Microwave Discharge Flow of Ar
BrCN与微波放电流Ar的解离激发反应产生的CN的绝对密度(X^2Σ^+),v=0能级
DOI:
--
发表时间:
2003
期刊:
Jpn.J.Appl.Phys. 42
影响因子:
--
作者:
[H.Ito, S.Ichimura, K.C.Namiki, H.Saitoh]
通讯作者:
H.Saitoh
伊藤治彦, 佐藤 陽, 齋藤秀俊: "Threshold Ionization Mass Spectrometry of BrCN. Gas-Phase Reaction Channels Which Determine the Nitrogen Contents in the Amorphous Carbon Nitride Films"Japanese Journal of Applied Physics. 41巻・8号. 5449-5450 (2002)
Haruhiko Ito、Yo Sato、Hidetoshi Saito:“BrCN 的阈值电离质谱。确定非晶氮化碳薄膜中氮含量的气相反应通道”《日本应用物理学杂志》第 41 卷,第 8 期。5449-5450( 2002)
DOI:
--
发表时间:
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作者:
[]
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The Electronic Transition Moment Function for the B3Π–X3Δ System of TiO
TiO B3Π–X3Δ体系的电子跃迁矩函数
DOI:
10.1006/jmsp.2002.8586
发表时间:
2002
期刊:
影响因子:
--
作者:
[K. Namiki, Haruhiko Ito]
通讯作者:
Haruhiko Ito
伊藤治彦, 田中一宏, 佐藤陽, 伊藤典子, 齋藤秀俊: "Ion-Induced Processes in the Dissociative Excitation Reaction of BrCN to Synthesize Mechanically Hard Amorphous Carbon Nitride Films in the Microwave Plasma Chemical Vapor Depsition System"Japanese Journal of Applied Physics.
Haruhiko Ito、Kazuhiro Tanaka、Yo Sato、Noriko Ito、Hidetoshi Saito:“微波等离子体化学气相沉积系统中 BrCN 解离激发反应中的离子诱导过程合成机械硬质非晶氮化碳薄膜”日本应用物理学杂志。
DOI:
--
发表时间:
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--
作者:
[]
通讯作者:
Formation of amorphous-CN thin films by the deposition of CN radicals -Absolute density of gas-phase CN
CN自由基沉积形成非晶CN薄膜-气相CN的绝对密度
DOI:
--
发表时间:
2005
期刊:
Transactions of the Materials Research Society of Japan 30
影响因子:
--
作者:
[H.Ito, H.Saitoh]
通讯作者:
H.Saitoh
共 27 条
Elucidation of Mechanism of Film Hardening of Amorphous CarbonsBased on the High-Resolution Laser Spectroscopy
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批准号:22560020
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.08万
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财政年份:2010
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负责人:ITO Haruhiko
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依托单位:
Dynamics of formation of ultra-hard thin films of amorphous carbon nitride by energy-controlled ion bombardment
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批准号:19560699
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.0万
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财政年份:2007
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负责人:ITO Haruhiko
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依托单位:
Control of hydrogen content in the carbon nitride materials and its development to the field emission devices based on the high-resolution laser spectroscopy
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批准号:14550721
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.62万
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财政年份:2002
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负责人:ITO Haruhiko
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依托单位:
Establishment of the principle of the synthesis of the super-hard carbon nitride films based on the diagnosis by the threshold ionization mass spectrometry
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批准号:11650760
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.37万
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财政年份:1999
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负责人:ITO Haruhiko
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依托单位:
海外基金