Control of hydrogen content in the carbon nitride materials and its development to the field emission devices based on the high-resolution laser spectroscopy

氮化碳材料中氢含量的控制及其基于高分辨率激光光谱的场发射器件的开发

• 批准号: 14550721
• 负责人: ITO Haruhiko
• 金额: $ 2.62万
• 依托单位: Nagaoka University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550721/
• 关键词: Amorphous carbon nitride films; Plasma CVD; BrCN; Sticking probability; Surface process; Thin film preparation; Film weight; IR spectra; CNラジカル; レーザー誘起蛍光法; 高周波放電; CH_4; N_2系; 高周波バイアス; マイクロ波プラズマCVD; CHラジカル; 発光分光; RBS; 薄膜組成; 薄膜構造

The present study aims to optimize the electric-field-emission property of hydrogenated amorphous carbon nitrides (a-CN_x : H) by controlling the quantity of the hydrogen atoms contained. Carbon nitrides including negligible amount of hydrogen atoms have a property of mechanical hardness. On the other hand, those include hydrogen atoms are, in general, mechanically soft : they have excellent electric-field emission characteristic when the hydrogen atoms are included in the forms of the NH or OH groups. In particular, the hybridized material which consists of the electrically-conducting Al-doped ZnO single-crystal whiskers (Fig.1) coated by the a-CN_x : H or a-CN_x : O : H thin films has a possibility of the FED device. In addition, a-CN_x : H materials containing CH_n(n=1-3) groups have the hydrogen-storage characteristic. Therefore, the control of the hydrogen quantity in the a-CN_x : H or a-CN_x : O : H materials is the key technology to synthesize the materials having the physical p … More roperties hoped.In the present study, carbon nitrides are synthesized by using the plasma enhanced CVD processes by applying the decomposition of cyanides such as BrCN and CH_3CN with the microwave or ECR plasmas of rare gases. In 2004, following studies are made. (1)The decomposition process of BrCN by the microwave-discharged products of Ar and the formation and quenching processes of the precursor CN radicals were investigated based on the laser-induced fluorescence (LIF) spectroscopy and the electrostatic-probe method. The dominant process of decomposition of BrCN is the charge transfer from Ar^+ followed by the BrCN^+-e^-recombination. The dominant quenching process of CN radicals is the reaction with unreacted BrCN. (2)The sticking probability (s) of the CN radicals onto the a-CN_x : H film was determined from the LIF spectroscopy of CN radicals, flow speed, and the weight of the a-CN_x : H film deposited. The s value is in the range of 0.032-0.019 being negatively dependent on the pressure of Ar in the range of 0.3-0.7 Torr. This negative pressure dependence of s can be explained by the reactivity of the CN radicals on the film surface. (3)ECR plasma CVD of the mixed gases of He and BrCN was found to be effective for the synthesis of a-CN_x : O : H with the hydrogen amount in a controlled fashion. Less

本研究旨在通过控制氢化非晶碳氮化物（a-CN_x：H）中氢原子的含量来优化其场发射性能。包含可忽略量的氢原子的氮化碳具有机械硬度的性质。另一方面，包括氢原子的那些通常是机械上柔软的：当氢原子以NH或OH基团的形式包括时，它们具有优异的电场发射特性。特别是在导电的Al掺杂ZnO单晶晶须表面包覆a-CN_x：H或a-CN_x：O：H薄膜所构成的杂化材料，有可能成为FED器件。此外，含CH_n（n=1-3）基团的a-CN_x：H材料具有储氢特性。因此，控制a-CN_x：H或a-CN_x：O：H材料中氢的量是合成具有物理性能的材料的关键技术 ...更多信息 本文利用微波或ECR等离子体分解氰化物（如BrCN和CH_3CN），用等离子体增强CVD法合成了氮化碳。2004年，进行了以下研究。（1）利用激光诱导荧光光谱（LIF）和静电探针法研究了微波放电Ar分解BrCN的过程以及CN自由基的形成和猝灭过程。BrCN分解的主要过程是Ar^+的电荷转移，随后是BrCN^+-e^-复合。CN自由基的主要猝灭过程是与未反应的BrCN反应。（2）根据CN自由基的激光诱导荧光光谱、流速和沉积的a-CN_x：H膜的重量确定CN自由基在a-CN_x：H膜上的粘附概率。s值在0.032-0.019的范围内，负依赖于0.3-0.7托范围内的Ar压力。这种负压依赖性的s可以解释的CN自由基的反应性的膜表面上。（3）He和BrCN混合气体的ECR等离子体化学气相沉积（ECR plasma CVD）是一种有效的合成a-CN_x：O：H的方法。少

项目成果

伊藤治彦, 二木裕史, 並木恵一, 伊藤典子, 斎藤秀俊: "Hydrogenated Amorphous Carbon Nitride Films Formed from the Dissociative Excitation Reaction of CH_3CN with the Microwave-Discharge Flow of Ar : Correlation of the [N]/([N]+[C]) Ratio with the Relative Number Densities of th

Haruhiko Ito、Hiroshi Niki、Keiichi Namiki、Noriko Ito、Hidetoshi Saito：“CH_3CN 的解离激发反应与 Ar 微波放电流形成的氢化非晶氮化碳薄膜：[N]/([N] + [C]) 与相对数密度的比率

Hydrogen Storage in Amorphous Phase of Hydrogenated Carbon Nitride

氢化碳氮化物非晶相储氢

• 发表时间: 2002
• 期刊: Japanese Journal of Applied Physics 41
• 作者: Y.Ohkawara;S.Ohshio;T.Suzuki;K.Yatsui;H.Ito;H.Saitoh
• 通讯作者: H.Saitoh

Work function of amorphous carbon nitride with various functional groups

• DOI: 10.1143/jjap.41.6169
• 发表时间: 2002-10-01
• 期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
• 作者: Saitoh, H;Akasaka, H;Ito, H
• 通讯作者: Ito, H

Hydrogenated-amorphous carbon nitride films formed from the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar: Correlation of the [N]/([N]+[C]) ratio with the relative number densities of the CH(A2Δ) and CN(B2Σ+) states

由 CH3CN 与微波放电流 Ar 的解离激发反应形成的氢化非晶氮化碳薄膜：[N]/([N]+[C]) 比率与 CH(A2Δ) 相对数密度的相关性) 和 CN(B2Σ+) 状态

• DOI: 10.1116/1.1690250
• 发表时间: 2004
• 期刊: Journal of Vacuum Science and Technology
• 作者: Haruhiko Ito;H. Miki;K. Namiki;N. Ito;H. Saitoh;Tsuneo Suzuki;K. Yatsui
• 通讯作者: K. Yatsui

伊藤治彦, 三木裕史, 伊藤治彦: "Dependence of the Electronic Transition Moment for the C^3Δ-X_3Δ System of TiO on the Internuclear Distance"Chemical Physics Letters. 370巻. 62-67 (2003)

Haruhiko Ito、Hiroshi Miki、Haruhiko Ito：“TiO 的 C^3Δ-X_3Δ 系统的电子跃迁矩对核间距离的依赖性”化学物理快报 370. 62-67 (2003)。