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High Voltage SiC Power Transistor having High Quality Gate Insulator Formed by Microwave Excited Plasma

具有微波激发等离子体形成的高质量栅极绝缘体的高压碳化硅功率晶体管

基本信息

批准号：
15360156
负责人：
TERAMOTO Akinobu
金额：
$ 9.66万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15360156/
关键词：
microwave excited plasma SiC insulator film MOS structure carbon remaining low temperature process epitaxial groth SiC プロセス低温化ラジカル酸化スパッタ成膜

项目摘要

High quality gate oxides are realized in the process temperature less than 1000[℃] by removal of carbon atoms from SiO_2 films formed by microwave excited high-density plasma. The microwave excited high-density plasma can generate the O^* radical, as a result, it can form the high quality SiO_2 films which have low fixed charge density and low int ire trap density on every Si surface such as (100), (110), (111), and polycrystalline Si at low temperature (<500[℃]). However, only O^* oxidation at 400[℃] cannot form the high quality oxides, which contain many carbon atoms of 10^<19> [atmos/cm^3] and high fixed charge density of 10^<12>[cm^<-2>]. The carbon content and the fixed charge density can be reduced one order of magnitude by N_2 annealing at 1000[℃]. The high SiO_2 films of desired film thickness can be formed by following CVD SiO_2 deposition using the dual shower plate structure microwave excited high-density plasma system. On the other hand combination of CVD Poly-Si and following O^* oxidation can form the high quality SiO_2 films on SiC surface at 400[℃]. In this method, the interface trap and fixed charge densities in the SiO_2 film can also reduced one order of magnitude compared with SiO_2 films directly oxidized by O^* oxidation on SiC surface. These indicate that the high quality SiO_2 films can be formed on SiC surface at low temperature less than 1000[℃].SiC films are deposited on Si(100) surface at 400[℃] using by RF-DC coupled sputter system The crystal of SiC(111) are appeared by N_2 annealing at 950[℃] after the deposition This suggests that the SIC crystal can be formed at the process temperature less than 1000[℃].

通过微波激发高密度等离子体形成的SiO_2薄膜中的碳原子去除，在低于1000[℃]的工艺温度下获得了高质量的栅氧化层。微波激发的高密度等离子体能产生O^* 自由基，从而在低温（<500[℃]）条件下在Si（100）、（110）、（111）等表面上形成固定电荷密度低、界面陷阱密度小的高质量SiO_2薄膜和多晶Si。然而，仅在400[℃]下的O^* 氧化不能形成高质量的氧化物，其含有10^<19>[atmos/cm ^3]的许多碳原子和10^ [cm^ ]的高固定电荷密度<12><-2>。经1000 ℃ N_2退火后，碳含量和固定电荷密度可降低一个数量级。采用双簇射板结构的微波激励高密度等离子体系统，在CVD沉积SiO_2后，可以得到所需厚度的高SiO_2薄膜。另一方面，在400[℃]下，CVD多晶硅和随后的O^* 氧化相结合可以在SiC表面形成高质量的SiO_2薄膜。与在SiC表面直接氧化的SiO_2膜相比，该方法中SiO_2膜中的界面陷阱和固定电荷密度也降低了一个数量级。结果表明，在低于1000[℃]的低温下，可以在SiC表面形成高质量的SiO_2薄膜，采用射频-直流耦合溅射系统，在400[℃]下在Si（100）表面沉积SiC薄膜，在950[℃]下进行N_2退火，可以得到SiC（111）晶相这表明SiC晶体可以在低于1000[℃]的工艺温度下形成。