High entropy semiconductor alloys

高熵半导体合金

• 批准号: 500666157
• 负责人: Professorin Dr. Silvana Botti
• 金额: --
• 依托单位: Abteilung Halbleiterphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/500666157?language=en
• 关键词: entropy; semiconductor; alloys

We strive to establish a new class of compound semiconductor materials, "high entropy semiconductor alloys" (HESA). We will fabricate an array of multinary, mostly quintenary, compound oxide semiconductors as thin films in order to investigate the suitability of the "high entropy" concept with regard to semiconductor alloys. To maximize the impact of the experimental effort, we will develop and apply improved machine-learning models trained on a database of DFT cluster expansion calculations for multi-component alloys. The main goal is to provide guidance to experiments and gain new insight into the synthesis and functional properties of HESAs.

我们努力建立一类新的化合物半导体材料，“高熵半导体合金”（HESA）。为了研究“高熵”概念在半导体合金方面的适用性，我们将制作一组多元（主要是五元）化合物氧化物半导体薄膜。为了最大限度地发挥实验成果的影响，我们将开发和应用改进的机器学习模型，该模型是在多组分合金的DFT簇展开计算数据库上训练的。主要目的是为实验提供指导，并对HESAs的合成和功能特性有新的认识。