Nano-structure functional devices based Ge-based channels

为了实现高性能的Ge器件，实现了(110)取向的绝缘层上Ge结构，并在该结构上制作了高空穴迁移率的pMOSFET。热氧化GeO2/Ge MOS结构的形成和评价也揭示了界面态密度较低的优良MOS界面。此外，使用该界面在MOSFET中实现了高的电子和空穴迁移率。此外，原子氢退火对于降低Ge器件的漏电流也是有效的。开发了使用全Heusler合金的Ge MOSFET的半金属源漏技术。提出了一种外延Ge/超薄SOI/掩埋氧化物/Si的快速热退火方法，实现了高有序的Go2FeGe层。

In order to realize high performance Ge devices, (110)-oriented Ge-On-Insulator structures have been realized and high hole mobility pMOSFETs have been fabricated on the structures. Also, the formation and the evaluation of thermal oxidation GeO2/Ge MOS structures have revealed the superior MOS interfaces with low density of interface states. In addition, high electron and hole mobility have been realized in MOSFETs using this interface. Also, the effectiveness of atomic hydrogen annealing has been demonstrated for reducing the leakage current of Ge devices.The development of half-metal Source/Drain technologies for Ge MOSFETs using full heusler alloys has been conducted. A method of rapid thermal annealing for epitaxial Ge/ultrathin SOI/buried oxide/Si has been proposed and has realized highly-ordered Go2FeGe layers.