Nano-structure functional devices based Ge-based channels

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In order to realize high performance Ge devices, (110)-oriented Ge-On-Insulator structures have been realized and high hole mobility pMOSFETs have been fabricated on the structures. Also, the formation and the evaluation of thermal oxidation GeO2/Ge MOS structures have revealed the superior MOS interfaces with low density of interface states. In addition, high electron and hole mobility have been realized in MOSFETs using this interface. Also, the effectiveness of atomic hydrogen annealing has been demonstrated for reducing the leakage current of Ge devices.The development of half-metal Source/Drain technologies for Ge MOSFETs using full heusler alloys has been conducted. A method of rapid thermal annealing for epitaxial Ge/ultrathin SOI/buried oxide/Si has been proposed and has realized highly-ordered Go2FeGe layers.