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Simulation of Thermal CVD Reactor

热CVD反应器模拟

基本信息

批准号：
01303009
负责人：
KATO Kunio
金额：
$ 4.74万
依托单位：
Gunma University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Co-operative Research (A)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01303009/
关键词：
CVD Polysilicon Epitaxial growth Wafer Film formation Ultra fine particle Natural convection Silicon compounds 熱CVD 薄膜成長エピタキシャル合成モノシラン

项目摘要

It is necessary for the simulation of CVD reactor to get the informations on the reaction kinetics and the transport phenomena in the reactor.Komiyama et al. have proposed Macro/Micro Cavity method to analyze the film formation characteristics by CVD and investigated on the formation of poly-Si film from silane by this method. Hashimoto et al. have studied the reaction kinetics on the production of polycrystalline Silicon by the decomposition of mono-silane and found that it was needed for the precise analysis of the reaction behavior to consider the radial distribution of silane concentration.Kato et al. have investigated the mass transfer and fluid flow models in a vertical multicomponent CVD reactor and the disk-type CVD reactor. The factors affecting the local mass transfer at the surface of wafer in the CVD reactor were clarified, and the model to analyze the distribution of the deposit rate in the vertical multicomponent CVD reactor was proposed. Imaishi has studied the simulation of the deposition of polysilicon film in a multicomponent CVD reactor by using the kinetic data obtained by Komiya and Shimogaki. The heat and mass transfer phenomena and the distribution of the film formation rate in the hot wall tubular CVD reactor and the horizontal thermal CVD reactor were analyzed numerically. Hozawa et al. have analyzed numerically the temperature distribution in the high-frequency induction heating CVD reactor. The effects of coil the positions of and susceptor and the frequency on the temperature distribution in the reactor were examined by analyzing both the electromagnetic field and temperature field. Nakayama et al. have analyzed the unsteady state flow in the tubular reactor by a finite element method and determined the distributions of gas velocity and gas concentration quantitatively.

对于CVD反应器的模拟，需要得到反应动力学和反应器内的输运现象的信息。提出了分析CVD成膜特性的宏微腔方法，并用该方法研究了硅烷形成多晶硅薄膜的过程。Hashimoto et al.对单硅烷分解制备多晶硅的反应动力学进行了研究，发现对反应行为的精确分析需要考虑硅烷浓度的径向分布。研究了立式多组分CVD反应器和盘式CVD反应器内的传质和流体流动模型。阐明了影响CVD反应器中晶片表面局部传质的因素，提出了分析垂直多组分CVD反应器中沉积率分布的模型。Imaishi利用Komiya和Shimogaki获得的动力学数据，研究了在多元CVD反应器中沉积多晶硅薄膜的模拟。对热壁管式CVD反应器和卧式热CVD反应器内的传热传质现象和成膜率分布进行了数值分析。Hozawa等人。对高频感应加热CVD反应器内的温度分布进行了数值分析。通过对电磁场和温度场的分析，考察了线圈、电感位置和频率对电抗器内温度分布的影响。Nakayama等人。用有限元方法对管式反应器内的非定常流动进行了分析，定量地确定了管式反应器内气体速度和气体浓度的分布。