Analysis of Chemical Reactions for Control of Si-Network-from Amorphous to Single Crystal-

控制硅网络的化学反应分析-从非晶到单晶-

• 批准号: 02402021
• 负责人: SHIMIZU Isamu
• 金额: $ 13.06万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02402021/
• 关键词: microwave plasma; auto-ellipsometry; in situ observation; Layr-by Lyer Technique; layer-by-layer; シリコン薄膜; 化学アニ-リング; アモルファスシリコン; 微結晶シリコン; 粒界制御; 自動エリプソメトリ-; ナロ-バンドギャップ; ステブラ・ロンスキ-効果; 基板表面反応制御; 水素化アモルファスシリコン

A systematic study was performed to realize the control of chemical reactions at the growing surface of Si-network for the aim of fabrication of Si thin films at low temperature as low as 300ﾟC with the structures, viz., amorphous, poly-(or muc-)Si and epi-Si by adopting non-equilibrium processing. An ellipsometry together with simulation by Effective Medium Approximation was employed as the in situ observation of the surface.A novel technique termed "Chemical Annealing" was proposed, where the deposition of very thin film of 10 A thick by RF glow of silane was alternately repeated with the treatment with atomic hydrogen generated by muW plasma. a-Si : H thin films with more rigid and stable network were successfully made by this technique due to promotion of the structural relaxation at the growing surface. In addition, we succeeded to fabricate highly stabilized a-Si : H for light soaking from SiCl_2H_2 by means of ECR hydrogen plasma. Strong chemical interaction between bydrogen and chlorine at the surface was responsible for the relaxation.Radicals given by SiFnHm (n+m(〕SY.ltoreq.〔)3) were promising precursors to fabricate Si-network with ordered structures. Epi-Si was grown on c-Si(100) from the fluorinated precursors at 300ﾟC or lower. In addition, high quality poly-Si films were grown on glass substrate using this precursors by repeating alternately the deposition of thin layr of 100 A thick and the treatment of the surface with flow of atomic hydrogen. (Leyer-by-Layr Technique) The phase transition from amorphous to crystalline was induced by impingement of hydrogen, which is considered to be responsible for the grain growth. High qualities in the electric and optical properties were established.

为实现对硅网生长表面化学反应的控制，采用非平衡工艺制备了非晶态、多晶硅和外延硅结构的硅薄膜，其低温温度可达300ﾟC。采用椭偏仪和有效介质近似模拟相结合的方法对薄膜表面进行了原位观察，提出了一种名为“化学退火法”的新技术，即用MUW等离子体产生的氢原子交替处理硅烷射频辉光沉积10A厚的超薄薄膜。由于生长表面的结构弛豫促进了a-Si：H薄膜的生长，成功地制备出了更坚硬稳定的a-Si：H薄膜。此外，我们还成功地利用ECR氢等离子体制备了用于SiCl2H2光浸渍的高度稳定的a-Si：H。SiFnHm(n+m(n+m)SY.ltoreq.()3)给出的自由基是制备有序结构硅网络结构的有希望的前驱体。用氟化前驱体在300ﾟC或更低的温度下，在c-Si(100)衬底上生长了外延硅。此外，利用该前驱体在玻璃衬底上交替沉积了100A厚的薄层，并用氢原子流对其表面进行处理，在玻璃衬底上生长了高质量的多晶硅薄膜。(Leyer-by-Layr技术)由非晶态到晶态的相变是由氢的撞击引起的，氢被认为是导致晶粒生长的原因。建立了高质量的电学和光学性能。

项目成果

Hajime Shirai: "A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network" Applied Physics Letters. 59. 1096-1098 (1991)

Hajime Shirai：“一种制备具有更刚性和稳定的硅网络的氢化非晶硅的新颖制备技术”《应用物理快报》。

Hajime Shirai: "Stability and holeーtransport in aーSi:H prepared by Chemical Annealing" Journal NonーCrystalline Solids. 137&138. 219-222 (1991)

Hajime Shirai：“化学退火制备的 a-Si:H 中的稳定性和空穴传输”杂志非晶固体 137&138 (1991)。

Deyan He: "“Structural and electrical properties of n-type poly-Si films prepared by Layer-by-layer technique"" Jpn.J.Appl.Phys.32. 3370-3375 (1993)

何德彦：“逐层技术制备的n型多晶硅薄膜的结构和电学性能”，Jpn.J.Appl.Phys.32 3370-3375 (1993)。

Masami Nakata: "“Study on chemical reactions on the growing surface to control the structure of μ c-Silicon from fluorinated precursors"" Jpn.J.Appl.Phys.33. 2562-2568 (1991)

Masami Nakata：“研究生长表面上的化学反应以控制来自氟化前体的μc-硅的结构”Jpn.J.Appl.Phys.33.2562-2568 (1991)

Deyan He: "“Carrier transport and structural properties of polysilicon films prepared by layer-by-layer technique"" Solar energy Materials & Solar Cells(SEM & SC). (印刷中).

何德彦：“逐层技术制备的多晶硅薄膜的载流子传输和结构特性”，《太阳能材料与太阳能电池》（SEM & SC）（出版中）。