Analysis of Chemical Reactions for Control of Si-Network-from Amorphous to Single Crystal-

控制硅网络的化学反应分析-从非晶到单晶-

• 批准号: 02402021
• 负责人: SHIMIZU Isamu
• 金额: $ 13.06万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02402021/
• 关键词: microwave plasma; auto-ellipsometry; in situ observation; Layr-by Lyer Technique; layer-by-layer; シリコン薄膜; 化学アニ-リング; アモルファスシリコン; 微結晶シリコン; 粒界制御; 自動エリプソメトリ-; ナロ-バンドギャップ; ステブラ・ロンスキ-効果; 基板表面反応制御; 水素化アモルファスシリコン

A systematic study was performed to realize the control of chemical reactions at the growing surface of Si-network for the aim of fabrication of Si thin films at low temperature as low as 300ﾟC with the structures, viz., amorphous, poly-(or muc-)Si and epi-Si by adopting non-equilibrium processing. An ellipsometry together with simulation by Effective Medium Approximation was employed as the in situ observation of the surface.A novel technique termed "Chemical Annealing" was proposed, where the deposition of very thin film of 10 A thick by RF glow of silane was alternately repeated with the treatment with atomic hydrogen generated by muW plasma. a-Si : H thin films with more rigid and stable network were successfully made by this technique due to promotion of the structural relaxation at the growing surface. In addition, we succeeded to fabricate highly stabilized a-Si : H for light soaking from SiCl_2H_2 by means of ECR hydrogen plasma. Strong chemical interaction between bydrogen and chlorine at the surface was responsible for the relaxation.Radicals given by SiFnHm (n+m(〕SY.ltoreq.〔)3) were promising precursors to fabricate Si-network with ordered structures. Epi-Si was grown on c-Si(100) from the fluorinated precursors at 300ﾟC or lower. In addition, high quality poly-Si films were grown on glass substrate using this precursors by repeating alternately the deposition of thin layr of 100 A thick and the treatment of the surface with flow of atomic hydrogen. (Leyer-by-Layr Technique) The phase transition from amorphous to crystalline was induced by impingement of hydrogen, which is considered to be responsible for the grain growth. High qualities in the electric and optical properties were established.

为了在低至300 ℃的低温下制备具有如下结构的Si薄膜，非晶、多晶（或微晶）Si和外延Si。采用椭圆偏振法和有效介质近似模拟方法对薄膜表面进行了原位观察，提出了一种新的“化学退火”技术，即硅烷射频辉光沉积厚度为10 A的极薄薄膜与μ W等离子体产生的原子氢处理交替重复。a-Si：由于该技术促进了生长表面的结构弛豫，因此成功地制备了具有更刚性和更稳定网络的H薄膜。此外，我们还成功地利用ECR氢等离子体从SiCl_2H_2中制备出了高稳定性的a-Si：H光浸渍材料。氢和氯在表面上的强化学相互作用是导致弛豫的原因。()3)是制备具有有序结构的硅网络的理想前驱体。在300 ℃或更低温度下，由氟化前体在c-Si（100）上生长外延硅。此外，通过交替地重复100埃厚的薄层沉积和原子氢流表面处理，使用该前驱体在玻璃衬底上生长了高质量的多晶硅膜。（Leyer-by-Layr技术）从非晶到结晶的相变是由氢的冲击引起的，这被认为是导致晶粒生长的原因。建立了高质量的电学和光学特性。

项目成果

Hajime Shirai: "A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network" Applied Physics Letters. 59. 1096-1098 (1991)

Hajime Shirai：“一种制备具有更刚性和稳定的硅网络的氢化非晶硅的新颖制备技术”《应用物理快报》。

Hajime Shirai: "Stability and holeーtransport in aーSi:H prepared by Chemical Annealing" Journal NonーCrystalline Solids. 137&138. 219-222 (1991)

Hajime Shirai：“化学退火制备的 a-Si:H 中的稳定性和空穴传输”杂志非晶固体 137&138 (1991)。

Deyan He: "“Structural and electrical properties of n-type poly-Si films prepared by Layer-by-layer technique"" Jpn.J.Appl.Phys.32. 3370-3375 (1993)

何德彦：“逐层技术制备的n型多晶硅薄膜的结构和电学性能”，Jpn.J.Appl.Phys.32 3370-3375 (1993)。

Masami Nakata: "“Study on chemical reactions on the growing surface to control the structure of μ c-Silicon from fluorinated precursors"" Jpn.J.Appl.Phys.33. 2562-2568 (1991)

Masami Nakata：“研究生长表面上的化学反应以控制来自氟化前体的μc-硅的结构”Jpn.J.Appl.Phys.33.2562-2568 (1991)

Deyan He: "“Carrier transport and structural properties of polysilicon films prepared by layer-by-layer technique"" Solar energy Materials & Solar Cells(SEM & SC). (印刷中).

何德彦：“逐层技术制备的多晶硅薄膜的载流子传输和结构特性”，《太阳能材料与太阳能电池》（SEM & SC）（出版中）。