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CONTROL OF FREE RADICALS FOR CONSTRUCTION OF MESOSCOPIC STRUCTURES OF MATERIALS

控制自由基以构建材料的介观结构

基本信息

批准号：
05237102
负责人：
SHIMIZU Isamu
金额：
$ 50.05万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research on Priority Areas
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1995
项目状态：
已结题

项目摘要

The real time control of the mososcopic structures of semiconductors was made by means of free radicals under the in situ observation with spectroscopic ellipsometry, STM (AFM) in an aqueous solution, FTIR-ATR,etc.Followings are the outstanding findings resulted in : (1) High quality hydrogenated amorphous silicon with the gaps from 1.55eV to 2.10eV was fabricated by controlling the medium range structures with the aid of free radicals during the growth, so called "Chemical Annealing". (2) High quality polycrystalline silicon thin films were grown on glass substrate under control of the surface reaction under the in situ observation with spectroscopic ellipsometry. (3) Novel technique termed the high fluidity CVD was developed by controlling surface reaction of free radicals under the observation with FTIR-ATR for making fine patterns on Si wafer. (4) A diagnostic study was carried out on the free radicals generated in plasma for the aim of making high quality amorphous silicon. Consequently, a-Si : H films showing high carriers mobility were achieved by the precise control of ions impinging on the growing surface. (5) The mechanism in atomic scale was revealed for the chemical etching of Si (111), (001) with HF or NH4F solution under the real time observation with STM (AFM) under controlling the electrochemical potentials. (6) Silicon nanocrystalline particles were fabricated by controlling hydrogen plasma and were manipulated with a AFM.Some quanmsize effets such as a single electron tunneling and the emission of visible light were practically observed in the particles.

利用椭圆偏振光谱法、水溶液中的STM（AFM）、FTIR-ATR等原位观察下的自由基，对半导体的微观结构进行了真实的时间控制。（一）利用该方法控制中程结构，制备出带隙为1.55 ~ 2.10eV的高质量氢化非晶硅在生长过程中的自由基，所谓的“化学退火”。(2)在椭圆偏振光谱仪的原位观测下，通过控制表面反应，在玻璃衬底上生长出了高质量的多晶硅薄膜。(3)在FTIR-ATR的观察下，通过控制自由基的表面反应，发展了一种在硅晶片上制作精细图形的新技术，称为高流动性CVD。(4)为了制备高质量的非晶硅，对等离子体中产生的自由基进行了诊断研究。因此，具有高载流子迁移率的a-Si：H薄膜是通过精确控制离子撞击生长表面来实现的。(5)利用扫描隧道显微镜（STM，AFM），在控制电化学电位的条件下，通过真实的实时观察，揭示了HF或NH_4F溶液对Si（111），（001）的化学腐蚀机理。(6)利用氢等离子体控制法制备了硅纳米晶颗粒，并利用原子力显微镜对其进行了操作，在颗粒中实际观察到了单电子隧穿和可见光发射等量子尺寸效应。